Patents by Inventor Ken Uchikoshi
Ken Uchikoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7705462Abstract: A semiconductor IC device which includes a circuit region and a peripheral region on a main surface of a semiconductor substrate, a first insulating film formed over the main surface, external terminals arranged in the peripheral region and formed over the first insulating film, a conductive guard ring formed over the first insulating film and provided around the external terminals, and second insulating films formed in the internal region and the peripheral region, the second insulating film in the peripheral region is formed over the first insulating film and over the guard ring and is contacting the external terminals, the second insulating films of the circuit region and that of the peripheral region are separately formed and are isolated from each other. Separate second insulating film may be formed over the wirings of one or more of existing wiring levels of the semiconductor device.Type: GrantFiled: September 21, 2009Date of Patent: April 27, 2010Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd.Inventors: Ken Uchikoshi, Naokatsu Suwanai, Atsushi Tachigami, Katsuhiko Hotta, Masashi Sahara, Kazuhiko Sato
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Publication number: 20100007024Abstract: A semiconductor IC device which includes a circuit region and a peripheral region on a main surface of a semiconductor substrate, a first insulating film formed over the main surface, external terminals arranged in the peripheral region and formed over the first insulating film, a conductive guard ring formed over the first insulating film and provided around the external terminals, and second insulating films formed in the internal region and the peripheral region, the second insulating film in the peripheral region is formed over the first insulating film and over the guard ring and is contacting the external terminals, the second insulating films of the circuit region and that of the peripheral region are separately formed and are isolated from each other. Separate second insulating film may be formed over the wirings of one or more of existing wiring levels of the semiconductor device.Type: ApplicationFiled: September 21, 2009Publication date: January 14, 2010Inventors: Ken UCHIKOSHI, Naokatsu Suwanai, Atsushi Tachigami, Katsuhiko Hotta, Masahi Sahara, Kazuhiko Sato
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Patent number: 7615848Abstract: A semiconductor IC device which includes a circuit region and a peripheral region on a main surface of a semiconductor substrate, a first insulating film formed over the main surface, external terminals arranged in the peripheral region and formed over the first insulating film, a conductive guard ring formed over the first insulating film and provided around the external terminals, and second insulating films formed in the internal region and the peripheral region, the second insulating film in the peripheral region is formed over the first insulating film and over the guard ring and is contacting the external terminals, the second insulating films of the circuit region and that of the peripheral region are separately formed and are isolated from each other. Separate second insulating film may be formed over the wirings of one or more of existing wiring levels of the semiconductor device.Type: GrantFiled: June 12, 2008Date of Patent: November 10, 2009Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd.Inventors: Ken Uchikoshi, Naokatsu Suwanai, Atsushi Tachigami, Katsuhiko Hotta, Masashi Sahara, Kazuhiko Sato
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Publication number: 20080277794Abstract: A semiconductor IC device which includes a circuit region and a peripheral region on a main surface of a semiconductor substrate, a first insulating film formed over the main surface, external terminals arranged in the peripheral region and formed over the first insulating film, a conductive guard ring formed over the first insulating film and provided around the external terminals, and second insulating films formed in the internal region and the peripheral region, the second insulating film in the peripheral region is formed over the first insulating film and over the guard ring and is contacting the external terminals, the second insulating films of the circuit region and that of the peripheral region are separately formed and are isolated from each other. Separate second insulating film may be formed over the wirings of one or more of existing wiring levels of the semiconductor device.Type: ApplicationFiled: June 12, 2008Publication date: November 13, 2008Inventors: Ken Uchikoshi, Naokatsu Suwanai, Atsushi Tachigami, Katsuhiko Hotta, Masashi Sahara, Kazuhiko Sato
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Patent number: 7400046Abstract: A semiconductor IC device which includes a circuit region and a peripheral region on a main surface of a semiconductor substrate, a first insulating film formed over the main surface, external terminals arranged in the peripheral region and formed over the first insulating film, a conductive guard ring formed over the first insulating film and provided around the external terminals, and second insulating films formed in the internal region and the peripheral region, the second insulating film in the peripheral region is formed over the first insulating film and over the guard ring and is contacting the external terminals, the second insulating films of the circuit region and that of the peripheral region are separately formed and are isolated from each other. Separate second insulating film may be formed over the wirings of one or more of existing wiring levels of the semiconductor device.Type: GrantFiled: May 31, 2007Date of Patent: July 15, 2008Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd.Inventors: Ken Uchikoshi, Naokatsu Suwanai, Atsushi Tachigami, Katsuhiko Hotta, Masashi Sahara, Kazuhiko Sato
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Patent number: 7303986Abstract: An insulating portion of the respective wiring layers for a semiconductor device is constituted of insulating films. The one insulating film is made of a material whose conductivity is higher than that of the other insulating film that is made of an ordinary silicon oxide film and is provided in contact with the wiring. An electric charge accumulated in the wiring generated in the course of manufacture of the semiconductor device is discharged through the one insulating film at a stage where a charge accumulation in the wiring is low. This permits the heat release value generated through the discharge to be suppressed to a low level, and the short-circuiting-failure between adjacent wirings to be suppressed or prevented.Type: GrantFiled: November 21, 2006Date of Patent: December 4, 2007Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd.Inventors: Ken Uchikoshi, Naokatsu Suwanai, Atsushi Tachigami, Katsuhiko Hotta, Masashi Sahara, Kazuhiko Sato
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Publication number: 20070228574Abstract: A semiconductor IC device which includes a circuit region and a peripheral region on a main surface of a semiconductor substrate, a first insulating film formed over the main surface, external terminals arranged in the peripheral region and formed over the first insulating film, a conductive guard ring formed over the first insulating film and provided around the external terminals, and second insulating films formed in the internal region and the peripheral region, the second insulating film in the peripheral region is formed over the first insulating film and over the guard ring and is contacting the external terminals, the second insulating films of the circuit region and that of the peripheral region are separately formed and are isolated from each other. Separate second insulating film may be formed over the wirings of one or more of existing wiring levels of the semiconductor device.Type: ApplicationFiled: May 31, 2007Publication date: October 4, 2007Inventors: Ken Uchikoshi, Naokatsu Suwanai, Atsushi Tachigami, Katsuhiko Hotta, Masashi Sahara, Kazuhiko Sato
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Publication number: 20070066050Abstract: An insulating portion of the respective wiring layers for a semiconductor device is constituted of insulating films. The one insulating film is made of a material whose conductivity is higher than that of the other insulating film that is made of an ordinary silicon oxide film and is provided in contact with the wiring. An electric charge accumulated in the wiring generated in the course of manufacture of the semiconductor device is discharged through the one insulating film at a stage where a charge accumulation in the wiring is low. This permits the heat release value generated through the discharge to be suppressed to a low level, and the short-circuiting-failure between adjacent wirings to be suppressed or prevented.Type: ApplicationFiled: November 21, 2006Publication date: March 22, 2007Inventors: Ken Uchikoshi, Naokatsu Suwanai, Atsushi Tachigami, Katsuhiko Hotta, Masashi Sahara, Kazuhiko Sato
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Patent number: 7189637Abstract: An insulating portion of the respective wiring layers for a semiconductor device is constituted of insulating films. The one insulating film is made of a material whose conductivity is higher than that of the other insulating film that is made of an ordinary silicon oxide film and is provided in contact with the wiring. An electric charge accumulated in the wiring generated in the course of manufacture of the semiconductor device is discharged through the one insulating film at a stage where a charge accumulation in the wiring is low. This permits the heat release value generated through the discharge can be suppressed to a low level, and the short-circuiting failure between adjacent wirings can be suppressed or prevented.Type: GrantFiled: December 11, 2003Date of Patent: March 13, 2007Assignees: Renesas Technology Corp., Hitachi Ulsi Systems Co., Ltd.Inventors: Ken Uchikoshi, Naokatsu Suwanai, Atsushi Tachigami, Katsuhiko Hotta, Masashi Sahara, Kazuhiko Sato
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Publication number: 20040121571Abstract: An insulating portion of the respective wiring layers for a semiconductor device is constituted of insulating films. The one insulating film is made of a material whose conductivity is higher than that of the other insulating film made of an ordinary silicon oxide film and is provided in contact with the wiring. An electric charge accumulated in the wiring generated in the course of the manufacture of the semiconductor device is discharged through the one insulating film at a stage where a charge accumulation in the wiring is low. This permits the heat release value generated through the discharge can be suppressed low, and the short-circuiting failure between adjacent wirings can be suppressed or prevented.Type: ApplicationFiled: December 11, 2003Publication date: June 24, 2004Inventors: Ken Uchikoshi, Naokatsu Suwanai, Atsushi Tachigami, Katsuhiko Hotta, Masashi Sahara, Kazuhiko Sato