Abstract: A controllable conduction device in the form of a transistor comprises source and drain regions 5, 2 between which extends a conduction path P for charge carriers, a gate 4 for controlling charge carrier flow along the conduction path and a multiple layer structure 3 providing a multiple tunnel junction configuration in the conduction path, with the result that current leakage is blocked by the multiple tunnel junction configuration when the transistor is in its off state. Vertical and lateral transistor configurations are described, together with use of the transistor in complimentary pairs and for a random access memory cell. Improved gate structures are described which are also applicable to memory devices that incorporate the tunnel barrier configuration to store charge on the memory node.

Abstract: According to one aspect of the present invention, there is provided a semiconductor device comprising a plurality of memory cells, and an error-correction circuit, wherein write operation is performed by a late-write method, and ECC processing is executed in parallel with writing, and thereby cycle time is shortened. Moreover, it is better that when a memory cell is power supplied through a well tap, the same address is not assigned while the memory cell is power supplied through the well tap.

Abstract: A semiconductor device comprises, a plurality of memory cells, and an error-correction circuit, wherein write operation is performed by a late-write method, and ECC processing is executed in parallel with writing, and thereby cycle time is shortened. Moreover, it is better that when a memory cell is power supplied through a well tap, the same address is not assigned while the memory cell is power supplied through the well tap.

Abstract: An inverted capsular punch for cutting tissue. The inverted capsular punch has a punch end effector assembly comprising a fixed upper jaw and a movable lower jaw which is pivotably secured to the fixed jaw. The fixed upper jaw has a length greater than that of the movable lower jaw, and has an elongated, spoon-like configuration that allows gentle separation and retraction of the capsule from adjacent tissues and neurovascular structures in the joint. The movable lower jaw is provided with a plurality of cutting teeth or serrations that cut the capsule. The movable lower jaw is actuated by a pair of ring handles.

Abstract: An articulating paddle elevator for manipulating tissue during arthroscopic procedures. The articulating elevator comprises a shaft, a proximal end, and a distal end provided with an articulating paddle. The paddle may be actuated by a switch and can articulate into a standard tip for traditional manipulation of tissue, or into a rotated or articulated position. In this manner, effective manipulation and retraction of tissue from the surgical site without tissue collapse may be achieved, allowing a surgeon to better visualize the internal condition of the arthroscopic site and speed up the overall procedure.

Abstract: The present invention relates to a method of concentrating low molecular weight peptides in the supernatant of serum-free cultured cells, said method comprising allowing the peptides to bind to a strong cation exchanger under an acid condition, and eluting them under an alkali condition to concentrate the peptide. Furthermore, peptides having the amino acid sequence as set forth in SEQ ID NO: 1 or 2, and a method of screening cancer markers using antibody to these peptides, are disclosed.

Abstract: The present invention relates to a set of tools and accessories used for properly positioning a stemmed humeral component, and/or a humeral stem provisional, within a canal in the humerus. The set of tools and accessories includes one or more fin clamps that are configured to be temporarily attached to a fin on the humeral component or the provisional; a ruler that is configured to be attached to the arm of the fin clamp, a fixation pin and pin driver configured to be used with the other tools for marking a position on the humerus; and one or more sleeves that are configured to slide over the stem of the humeral stem provisional to maintain it in the desired position.

Abstract: A method for producing a semiconductor device which comprises causing a dopant present in a semiconductor substrate to segregate in the surface of said semiconductor substrate, thereby forming a thin layer which has a higher dopant concentration than said substrate. The thin layer formed by segregation prevents punch-through which occurs as the result of miniaturization of MOSFET. This method permits economical delta doping without sacrificing the device characteristics.

Abstract: A higher-performance short channel MOS transistor with enhanced resistance to soft errors caused by exposure to high-energy rays is realized. At the time of forming a deep source/drain diffusion layer region at high density, an intermediate region of a density higher than that of impurity of a semiconductor substrate is formed between the source/drain diffusion layer and the semiconductor substrate of a conduction type opposite to that of the source/drain diffusion layer. The intermediate region is formed with a diffusion window for forming the source/drain, an intermediate layer of uniform concentration and uniform width can be realized at low cost.

Abstract: According to one aspect of the present invention, there is provided a semiconductor device comprising a plurality of memory cells, and an error-correction circuit, wherein write operation is performed by a late-write method, and ECC processing is executed in parallel with writing, and thereby cycle time is shortened. Moreover, it is better that when a memory cell is power supplied through a well tap, the same address is not assigned while the memory cell is power supplied through the well tap.

Abstract: A higher-performance short channel MOS transistor with enhanced resistance to soft errors caused by exposure to high-energy rays is realized. At the time of forming a deep source/drain diffusion layer region at high density, an intermediate region of a density higher than that of impurity of a semiconductor substrate is formed between the source/drain diffusion layer and the semiconductor substrate of a conduction type opposite to that of the source/drain diffusion layer. The intermediate region is formed with a diffusion window for forming the source/drain, an intermediate layer of uniform concentration and uniform width can be realized at low cost.

Abstract: A method for producing a semiconductor device which comprises causing a dopant present in a semiconductor substrate to segregate in the surface of said semiconductor substrate, thereby forming a thin layer which has a higher dopant concentration than said substrate. The thin layer formed by segregation prevents punch-through which occurs as the result of miniaturization of MOSFET. This method permits economical delta doping without sacrificing the device characteristics.

Abstract: A bovine- or human-derived calcium-binding protein with a prescribed amino acid sequence, a method for its production, and antibodies against the protein and uses thereof.

Abstract: A controllable conduction device in the form of a transistor comprises source and drain regions 5, 2 between which extends a conduction path P for charge carriers, a gate 4 for controlling charge carrier flow along the conduction path and a multiple layer structure 3 providing a multiple tunnel junction configuration in the conduction path, with the result that current leakage is blocked by the multiple tunnel junction configuration when the transistor is in its off state. Vertical and lateral transistor configurations are described, together with use of the transistor in complimentary pairs and for a random access memory cell. Improved gate structures are described which are also applicable to memory devices that incorporate the tunnel barrier configuration to store charge on the memory node.

Abstract: In a semiconductor memory device such as a DRAM, a conductive film is arranged on the rim portion of a isolation insulating film in opposition to a semiconductor substrate with a thin insulating film in between. This conductive film is electrically connected to a lower electrode of a storage capacitor. This novel arrangement can control the location of electrical pn junction independently of the location of metallurgical pn junction, thereby realizing a semiconductor memory device having a long data retention time with the increase in leakage current suppressed.

Abstract: A bovine- or human-derived calcium-binding protein with a prescribed amino acid sequence, a method for its production, and antibodies against the protein and uses thereof.

Abstract: A controllable conduction device in the form of a transistor comprises source and drain regions 5, 2 between which extends a conduction path P for charge carriers, a gate 4 for controlling charge carrier flow along the conduction path and a multiple layer structure 3 providing a multiple tunnel junction configuration in the conduction path, with the result that current leakage is blocked by the multiple tunnel junction configuration when the transistor is in its off state. Vertical and lateral transistor configurations are described, together with use of the transistor in complimentary pairs and for a random access memory cell. Improved gate structures are described which are also applicable to memory devices that incorporate the tunnel barrier configuration to store charge on the memory node.

Abstract: A rubbery adhesive composition wherein at least one adherend is a rubber composition including butadiene rubber as a rubber ingredient, characterized in that butadiene rubber is included as a rubber ingredient and 3˜20% by weight of the butadiene rubber is syndiotactic-1,2-polybutadiene. Thus, it is possible to enhance the strength of the rubbery adhesive composition itself to improve the adhesion property before and after vulcanization without damaging the adhesion property at the interface.

Abstract: In a semiconductor memory device such as a DRAM, a conductive film (1.11') is arranged on the rim portion of a isolation insulating film (1.2) in opposition to a semiconductor substrate (1.1) with a thin insulating film in between. This conductive film (1.11') is electrically connected to a lower electrode (1.11) of a storage capacitor. This novel arrangement can control the location of electrical pn junction independently of the location of metallurgical pn junction, thereby realizing a semiconductor memory device having a long data retention time with the increase in leakage current suppressed.

Abstract: This invention relates to a pneumatic tire coated with a water-based electrically conductive coating, in which the coating contains a carbon black having a nitrogen adsorption specific surface area (N.sub.2 SA) of 70 m.sup.2 /g-180 m.sup.2 /g and a dibutyl phtalate (DBP) absorption of 70 ml/100 g-180 ml/100 g, a surface active agent and a rubber ingredient.