Abstract: In a process for producing a silicon single crystal in which carbon is incorporated in order to inhibit crystal defects, provided is a process which easily allows carbon to be mixed and dissolved into a silicon melt. The process for producing a silicon single crystal, which involves allowing a silicon single crystal to grow during its pulling-up from the silicon melt held in a crucible, uses as at least part of a silicon raw material, crushed materials of a polycrystalline silicon rod produced by Siemens process that are obtained by crushing an end of the rod in the vicinity contacting a carbon core wire holding member.

Abstract: In a process for producing a silicon single crystal in which carbon is incorporated in order to inhibit crystal defects, provided is a process which easily allows carbon to be mixed and dissolved into a silicon melt. The process for producing a silicon single crystal, which involves allowing a silicon single crystal to grow during its pulling-up from the silicon melt held in a crucible, uses as at least part of a silicon raw material, crushed materials of a polycrystalline silicon rod produced by Siemens process that are obtained by crushing an end of the rod in the vicinity contacting a carbon core wire holding member.

Abstract: A metal fluoride single crystal pulling apparatus that upward pulling initiation through termination, in the state of shallow melt capable of highly effective inhibition of scatterer formation, can perform stable growth of single crystal and can suppress any mixing of air bubbles and occurrence of crystal break during crystal growth, etc; and a process for producing a metal fluoride single crystal therewith. As a crucible for accommodating a melt of raw metal fluoride, use is made of a double structured crucible composed of an outer crucible and an inner crucible. In the upward pulling of single crystal, the accommodation depth of inner crucible relative to the outer crucible is increased in accordance with any decrease of melt accommodated in the inner crucible according to the growth of single crystal, so that the melt accommodated in the outer crucible is fed into the inner crucible to thereby maintain the amount of melt accommodated in the inner crucible within a given range.

Abstract: A metal fluoride single crystal pulling apparatus that upward pulling initiation through termination, in the state of shallow melt capable of highly effective inhibition of scatterer formation, can perform stable growth of single crystal and can suppress any mixing of air bubbles and occurrence of crystal break during crystal growth, etc; and a process for producing a metal fluoride single crystal therewith. As a crucible for accommodating a melt of raw metal fluoride, use is made of a double structured crucible composed of an outer crucible and an inner crucible. In the upward pulling of single crystal, the accommodation depth of inner crucible relative to the outer crucible is increased in accordance with any decrease of melt accommodated in the inner crucible according to the growth of single crystal, so that the melt accommodated in the outer crucible is fed into the inner crucible to thereby maintain the amount of melt accommodated in the inner crucible within a given range.