Patents by Inventor Ken-Yu Chang

Ken-Yu Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230402366
    Abstract: A semiconductor device includes a substrate, a source/drain region disposed in the substrate, a silicide structure disposed on the source/drain region, a first dielectric layer disposed over the substrate, a conductive contact disposed in the first dielectric layer and over the silicide structure, a second dielectric layer disposed over the first dielectric layer, a via contact disposed in the second dielectric layer and connected to the conductive contact, and a first metal surrounding the via contact.
    Type: Application
    Filed: June 9, 2022
    Publication date: December 14, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shuen-Shin LIANG, Chia-Hung CHU, Po-Chin CHANG, Hsu-Kai CHANG, Kuan-Kan HU, Ken-Yu CHANG, Hung-Yi HUANG, Harry CHIEN, Wei-Yip LOH, Chun-I TSAI, Hong-Mao LEE, Sung-Li WANG, Pinyen LIN, Chuan-Hui SHEN
  • Patent number: 11817384
    Abstract: The present disclosure provides an interconnect structure and a method for forming an interconnect structure. The method for forming an interconnect structure includes forming a bottom metal line in a first interlayer dielectric layer, forming a second interlayer dielectric layer over the bottom metal line, exposing a top surface of the bottom metal line, increasing a total surface area of the exposed top surface of the bottom metal line, forming a conductive via over the bottom metal line, and forming a top metal line over the conductive via.
    Type: Grant
    Filed: January 3, 2022
    Date of Patent: November 14, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Shuen-Shin Liang, Ken-Yu Chang, Hung-Yi Huang, Chien Chang, Chi-Hung Chuang, Kai-Yi Chu, Chun-I Tsai, Chun-Hsien Huang, Chih-Wei Chang, Hsu-Kai Chang, Chia-Hung Chu, Keng-Chu Lin, Sung-Li Wang
  • Publication number: 20230299168
    Abstract: A semiconductor device includes a semiconductor substrate, an epitaxial structure, a silicide structure, a conductive structure, and a protection segment. The epitaxial structure is disposed in the semiconductor substrate. The silicide structure is disposed in the epitaxial structure. The conductive structure is disposed over the silicide structure and is electrically connected to the silicide structure. The protection segment is made of metal nitride, is disposed over the silicide structure, and is disposed between the silicide structure and the conductive structure.
    Type: Application
    Filed: March 15, 2022
    Publication date: September 21, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kuan-Kan HU, Shuen-Shin LIANG, Chia-Hung CHU, Po-Chin CHANG, Hsu-Kai CHANG, Ken-Yu CHANG, Wei-Yip LOH, Hung-Yi HUANG, Harry CHIEN, Sung-Li WANG, Pinyen LIN, Chuan-Hui SHEN, Tzu-Pei CHEN, Yuting CHENG
  • Publication number: 20230268228
    Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back by a wet etching process. After etching back the portion of the barrier layer, an underlying dielectric welding layer is exposed. A conductive material is formed along the barrier layer.
    Type: Application
    Filed: April 28, 2023
    Publication date: August 24, 2023
    Inventors: Ken-Yu Chang, Chun-I Tsai, Ming-Hsing Tsai, Wei-Jung Lin
  • Publication number: 20230268173
    Abstract: A method of forming a semiconductor device includes forming a first conductive feature on a bottom surface of an opening through a dielectric layer. The forming the first conductive feature leaves seeds on sidewalls of the opening. A treatment process is performed on the seeds to form treated seeds. The treated seeds are removed with a cleaning process. The cleaning process may include a rinse with deionized water. A second conductive feature is formed to fill the opening.
    Type: Application
    Filed: April 28, 2023
    Publication date: August 24, 2023
    Inventors: Cheng-Wei Chang, Min-Hsiu Hung, Chun-I Tsai, Ken-Yu Chang, Yi-Ying Liu
  • Publication number: 20230260786
    Abstract: A method includes forming a conductive member over a first conductive line; forming a second conductive line over the conductive member; and removing a portion of the conductive member exposed by the second conductive line to form a conductive via. The formation of the second conductive line is implemented prior to the formation of the conductive via. A semiconductor structure includes a first conductive line having a first surface; a second conductive line disposed above the first conductive line and having a second surface overlapping the first surface; and a conductive via electrically connected to the first surface and the second surface. The conductive via includes a first end disposed within the first surface, a second end disposed within the second surface, and a cross-section between the first end and the second end, wherein at least two of interior angles of the cross-section are substantially unequal to 90°.
    Type: Application
    Filed: February 17, 2022
    Publication date: August 17, 2023
    Inventors: JOHNNY CHIAHAO LI, SHIH-MING CHANG, KEN-HSIEN HSIEH, CHI-YU LU, YUNG-CHEN CHIEN, HUI-ZHONG ZHUANG, JERRY CHANG JUI KAO, XIANGDONG CHEN
  • Publication number: 20230230916
    Abstract: A method for manufacturing a semiconductor device includes: forming a lower metal contact in a trench of a first dielectric structure, the lower metal contact having a height less than a depth of the trench and being made of a first metal material; forming an upper metal contact to fill the trench and to be in contact with the lower metal contact, the upper metal contact being formed of a second metal material different from the first metal material and having a bottom surface with a dimension the same as a dimension of a top surface of the lower metal contact; forming a second dielectric structure on the first dielectric structure; and forming a via contact penetrating through the second dielectric structure to be electrically connected to the upper metal contact, the via contact being formed of a metal material the same as the second metal material.
    Type: Application
    Filed: January 18, 2022
    Publication date: July 20, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shuen-Shin LIANG, Chia-Hung CHU, Po-Chin CHANG, Tzu-Pei CHEN, Ken-Yu CHANG, Hung-Yi HUANG, Harry CHIEN, Wei-Yip LOH, Chun-I TSAI, Hong-Mao LEE, Sung-Li WANG, Pinyen LIN
  • Patent number: 11676859
    Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back by a wet etching process. After etching back the portion of the barrier layer, an underlying dielectric welding layer is exposed. A conductive material is formed along the barrier layer.
    Type: Grant
    Filed: July 12, 2021
    Date of Patent: June 13, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ken-Yu Chang, Chun-I Tsai, Ming-Hsing Tsai, Wei-Jung Lin
  • Patent number: 11670499
    Abstract: A method of forming a semiconductor device includes forming a first conductive feature on a bottom surface of an opening through a dielectric layer. The forming the first conductive feature leaves seeds on sidewalls of the opening. A treatment process is performed on the seeds to form treated seeds. The treated seeds are removed with a cleaning process. The cleaning process may include a rinse with deionized water. A second conductive feature is formed to fill the opening.
    Type: Grant
    Filed: March 18, 2021
    Date of Patent: June 6, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Wei Chang, Min-Hsiu Hung, Chun-I Tsai, Ken-Yu Chang, Yi-Ying Liu
  • Publication number: 20230095976
    Abstract: The present disclosure describes a method for forming capping layers configured to prevent the migration of out-diffused cobalt atoms into upper metallization layers In some embodiments, the method includes depositing a cobalt diffusion barrier layer on a liner-free conductive structure that includes ruthenium, where depositing the cobalt diffusion barrier layer includes forming the cobalt diffusion barrier layer self-aligned to the liner-free conductive structure. The method also includes depositing, on the cobalt diffusion barrier layer, a stack with an etch stop layer and dielectric layer, and forming an opening in the stack to expose the cobalt diffusion barrier layer. Finally, the method includes forming a conductive structure on the cobalt diffusion barrier layer.
    Type: Application
    Filed: December 5, 2022
    Publication date: March 30, 2023
    Inventors: Shuen-Shin LIANG, Chun-I TSAI, Chih-Wei CHANG, Chun-Hsien HUANG, Hung-Yi HUANG, Keng-Chu LIN, Ken-Yu CHANG, Sung-Li WANG, Chia-Hung CHU, Hsu-Kai CHANG
  • Patent number: 11594609
    Abstract: The present disclosure describes a method for forming liner-free or barrier-free conductive structures. The method includes forming a liner-free conductive structure on a cobalt conductive structure disposed on a substrate, depositing a cobalt layer on the liner-free conductive structure and exposing the liner-free conductive structure to a heat treatment. The method further includes removing the cobalt layer from the liner-free conductive structure.
    Type: Grant
    Filed: May 29, 2020
    Date of Patent: February 28, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shuen-Shin Liang, Chun-I Tsai, Chih-Wei Chang, Chun-Hsien Huang, Hung-Yi Huang, Keng-Chu Lin, Ken-Yu Chang, Sung-Li Wang, Chia-Hung Chu, Hsu-Kai Chang
  • Publication number: 20230038744
    Abstract: Low-flow tungsten chemical vapor deposition (CVD) techniques described herein provide substantially uniform deposition of tungsten on a semiconductor substrate. In some implementations, a flow of a processing vapor is provided to a CVD processing chamber such that a flow rate of tungsten hexafluoride in the processing vapor results in the tungsten layer being grown at a slower rate than a higher flow rate of the tungsten hexafluoride to promote substantially uniform growth of the tungsten layer. In this way, the low-flow tungsten CVD techniques may be used to achieve similar surface uniformity performance to an atomic layer deposition (ALD) while being a faster deposition process relative to ALD (e.g., due to the lower deposition rate and large quantity of alternating processing cycles of ALD). This reduces the likelihood of defect formation in the tungsten layer while increasing the throughput of semiconductor device processing for the semiconductor substrate (and other semiconductor substrates).
    Type: Application
    Filed: August 6, 2021
    Publication date: February 9, 2023
    Inventors: Pin-Wen CHEN, Yuan-Chen HSU, Ken-Yu CHANG
  • Publication number: 20230029508
    Abstract: Some implementations described herein provide a gas curtain system. The gas curtain system includes various components to prevent a gas flowing within a chamber of an interface tool from flowing through an opening into a transport carrier adjacent to the interface tool. The gas curtain system may include a gas distribution component along an edge of the opening that generates a flow of another gas across the opening towards an opposite edge of the opening. In this way, the gas from the chamber is prevented from entering the transport carrier. By preventing the gas from the chamber from entering the transport carrier, a relative humidity within an environment of the transport carrier is maintained such that condensation of moisture on one or more semiconductor wafers within the transport carrier is mitigated.
    Type: Application
    Filed: May 5, 2022
    Publication date: February 2, 2023
    Inventors: Yu-Syuan TSAI, Chen-Yuan KAO, Chia-Han LAI, Hong-Ming WU, Yu-Chan TSAI, Chun-Hsien HUANG, Ken-Yu CHANG
  • Patent number: 11521929
    Abstract: The present disclosure describes a method for forming capping layers configured to prevent the migration of out-diffused cobalt atoms into upper metallization layers In some embodiments, the method includes depositing a cobalt diffusion barrier layer on a liner-free conductive structure that includes ruthenium, where depositing the cobalt diffusion barrier layer includes forming the cobalt diffusion barrier layer self-aligned to the liner-free conductive structure. The method also includes depositing, on the cobalt diffusion barrier layer, a stack with an etch stop layer and dielectric layer, and forming an opening in the stack to expose the cobalt diffusion barrier layer. Finally, the method includes forming a conductive structure on the cobalt diffusion barrier layer.
    Type: Grant
    Filed: January 5, 2021
    Date of Patent: December 6, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shuen-Shin Liang, Chun-I Tsai, Chih-Wei Chang, Chun-Hsien Huang, Hung-Yi Huang, Keng-Chu Lin, Ken-Yu Chang, Sung-Li Wang, Chia-Hung Chu, Hsu-Kai Chang
  • Publication number: 20220367662
    Abstract: The present disclosure describes a method for forming liner-free or barrier-free conductive structures. The method includes forming a liner-free conductive structure on a cobalt conductive structure disposed on a substrate, depositing a cobalt layer on the liner-free conductive structure and exposing the liner-free conductive structure to a heat treatment. The method further includes removing the cobalt layer from the liner-free conductive structure.
    Type: Application
    Filed: July 28, 2022
    Publication date: November 17, 2022
    Applicant: Taiwan Semiconductor Manufacturing, Co., Ltd.
    Inventors: Shuen-Shin Liang, Chun-I Tsai, Chih-Wei Chang, Chun-Hsien Huang, Hung-Yi Huang, Keng-Chu Lin, Ken-Yu Chang, Sung-Li Wang, Chia-Hung Chu, Hsu-Kai Chang
  • Publication number: 20220301858
    Abstract: A method of forming a semiconductor device includes forming a first conductive feature on a bottom surface of an opening through a dielectric layer. The forming the first conductive feature leaves seeds on sidewalls of the opening. A treatment process is performed on the seeds to form treated seeds. The treated seeds are removed with a cleaning process. The cleaning process may include a rinse with deionized water. A second conductive feature is formed to fill the opening.
    Type: Application
    Filed: March 18, 2021
    Publication date: September 22, 2022
    Inventors: Cheng-Wei Chang, Min-Hsiu Hung, Chun-I Tsai, Ken-Yu Chang, Yi-Ying Liu
  • Publication number: 20220293503
    Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.
    Type: Application
    Filed: March 12, 2021
    Publication date: September 15, 2022
    Inventors: Chun-Hsien HUANG, Peng-Fu HSU, Yu-Syuan TSAI, Min-Hsiu HUNG, Chen-Yuan KAO, Ken-Yu CHANG, Chun-I TSAI, Chia-Han LAI, Chih-Wei CHANG, Ming-Hsing TSAI
  • Publication number: 20220189825
    Abstract: A semiconductor device includes a substrate, two semiconductor fins protruding from the substrate, an epitaxial feature over the two semiconductor fins and connected to the two semiconductor fins, a silicide layer over the epitaxial feature, a barrier layer over the silicide layer, and a metal layer over the barrier layer. The barrier layer includes a metal nitride. Along a boundary between the barrier layer and the metal layer, an atomic ratio of oxygen to metal nitride is about 0.15 to about 1.0.
    Type: Application
    Filed: February 21, 2022
    Publication date: June 16, 2022
    Inventors: Cheng-Wei Chang, Yu-Ming Huang, Ethan Tseng, Ken-Yu Chang, Yi-Ying Liu
  • Publication number: 20220130755
    Abstract: The present disclosure provides an interconnect structure and a method for forming an interconnect structure. The method for forming an interconnect structure includes forming a bottom metal line in a first interlayer dielectric layer, forming a second interlayer dielectric layer over the bottom metal line, exposing a top surface of the bottom metal line, increasing a total surface area of the exposed top surface of the bottom metal line, forming a conductive via over the bottom metal line, and forming a top metal line over the conductive via.
    Type: Application
    Filed: January 3, 2022
    Publication date: April 28, 2022
    Inventors: SHUEN-SHIN LIANG, KEN-YU CHANG, HUNG-YI HUANG, CHIEN CHANG, CHI-HUNG CHUANG, KAI-YI CHU, CHUN-I TSAI, CHUN-HSIEN HUANG, CHIH-WEI CHANG, HSU-KAI CHANG, CHIA-HUNG CHU, KENG-CHU LIN, SUNG-LI WANG
  • Patent number: 11257712
    Abstract: A method includes providing a structure that includes a semiconductor substrate, an epitaxial source/drain feature over the semiconductor substrate, and one or more dielectric layers over the epitaxial source/drain feature; etching a hole into the one or more dielectric layer to expose a portion of the epitaxial source/drain feature; forming a silicide layer over the portion of the epitaxial source/drain feature; forming a conductive barrier layer over the silicide layer; and applying a plasma cleaning process to at least the conductive barrier layer, wherein the plasma cleaning process uses a gas mixture including N2 gas and H2 gas and is performed at a temperature that is at least 300° C.
    Type: Grant
    Filed: May 13, 2020
    Date of Patent: February 22, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Wei Chang, Yu-Ming Huang, Ethan Tseng, Ken-Yu Chang, Yi-Ying Liu