Patents by Inventor Kenan Gündo{hacek over (g)}du

Kenan Gündo{hacek over (g)}du has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-magnetic semiconductor spin transistor
    Patent number: 7719070
    Abstract: A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the characteristics of spin-polarized current flow. The nonmagnetic semiconductor device exploits the properties of bulk inversion asymmetry (BIA) in (110)-oriented quantum wells. The nonmagnetic semiconductor device may also be used as a nonmagnetic semiconductor spin valve and a magnetic field sensor. The spin transistor and spin valve may be applied to low-power and/or high-density and/or high-speed logic technologies. The magnetic field sensor may be applied to high-speed hard disk read heads. The spin RTD of the present invention would be useful for a plurality of semiconductor spintronic devices for spin injection and/or spin detection.
    Type: Grant
    Filed: January 9, 2009
    Date of Patent: May 18, 2010
    Assignee: University of Iowa Research Foundation
    Inventors: Kimberley C. Hall, Wayne H. Lau, Kenan Gündo{hacek over (g)}du, Michael E. Flatté, Thomas F. Boggess
  • Non-magnetic semiconductor spin transistor
    Patent number: 7492022
    Abstract: A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the characteristics of spin-polarized current flow. The nonmagnetic semiconductor device exploits the properties of bulk inversion asymmetry (BIA) in (110)-oriented quantum wells. The nonmagnetic semiconductor device may also be used as a nonmagnetic semiconductor spin valve and a magnetic field sensor. The spin transistor and spin valve may be applied to low-power and/or high-density and/or high-speed logic technologies. The magnetic field sensor may be applied to high-speed hard disk read heads. The spin RTD of the present invention would be useful for a plurality of semiconductor spintronic devices for spin injection and/or spin detection.
    Type: Grant
    Filed: February 28, 2005
    Date of Patent: February 17, 2009
    Assignee: University of Iowa Research Foundation
    Inventors: Kimberley C. Hall, Wayne H. Lau, Kenan Gündo{hacek over (g)}du, Michael E. Flatté, Thomas F. Boggess