Abstract: Methods and apparatus are disclosed, and include: (a) separating an input electromagnetic waveform into a plurality of intermediate waveforms, each of the intermediate waveforms being spatially separated from one another; (b) dispersing frequency components of each intermediate waveform onto different regions of a spatial light modulator and modulating at least some of the dispersed frequency components with the spatial light modulator; and (c) recombining the dispersed frequency components for each of the intermediate waveforms to produce a plurality of temporally shaped output waveforms.

Abstract: A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the characteristics of spin-polarized current flow. The nonmagnetic semiconductor device exploits the properties of bulk inversion asymmetry (BIA) in (110)-oriented quantum wells. The nonmagnetic semiconductor device may also be used as a nonmagnetic semiconductor spin valve and a magnetic field sensor. The spin transistor and spin valve may be applied to low-power and/or high-density and/or high-speed logic technologies. The magnetic field sensor may be applied to high-speed hard disk read heads. The spin RTD of the present invention would be useful for a plurality of semiconductor spintronic devices for spin injection and/or spin detection.

Abstract: Methods and apparatusare disclosed, and include: (a) separating an input electromagnetic waveform into a plurality of intermediate waveforms, each of the intermediate waveforms being spatially separated from one another; (b) dispersing frequency components of each intermediate waveform onto different regions of a spatial light modulator and modulating at least some of the dispersed frequency components with the spatial light modulator; and (c) recombining the dispersed frequency components for each of the intermediate waveforms to produce a plurality of temporally shaped output waveforms.

Abstract: A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the characteristics of spin-polarized current flow. The nonmagnetic semiconductor device exploits the properties of bulk inversion asymmetry (BIA) in (110)-oriented quantum wells. The nonmagnetic semiconductor device may also be used as a nonmagnetic semiconductor spin valve and a magnetic field sensor. The spin transistor and spin valve may be applied to low-power and/or high-density and/or high-speed logic technologies. The magnetic field sensor may be applied to high-speed hard disk read heads. The spin RTD of the present invention would be useful for a plurality of semiconductor spintronic devices for spin injection and/or spin detection.