Abstract: A magneto-resistive device has a high reproducing output and is suitable for use as a CPP-GMR device. The magneto-resistive device has a first magnetic layer, a second magnetic layer, and a non-magnetic spacer formed between the first and second magnetic layers. The first magnetic layer contains a magnetic material whose conduction electrons belong to a first energy band, and the second magnetic layer contains a magnetic material whose conduction electrons belong to a second energy band. The first and second energy bands are attributable to orbitals of the same kind, thereby increasing the ratio of change in magnetoresistance and adjusting the electric resistance.

Abstract: A magnetoresistive head which has a high low resistance and a high MR ratio at room temperature and a S/N ratio that does not decrease sharply upon application of a bias voltage. The magnetoresistive head comprises a soft magnetic free layer, a non-magnetic insulating layer, and a ferromagnetic pinned layer. The ferromagnetic pinned layer may have a spin valve layer whose magnetization is fixed with respect to the magnetic field to be detected, and the soft magnetic free layer permits its magnetization to rotate in response to an external magnetic field, thereby changing the relative angle with the magnetization of said ferromagnetic pinned layer and producing the magnetoresistive effect. The absolute value of the magnetoresistive effect has a peak at a temperature in the range from about 0° C. to 60° C. and for a bias voltage Vs (applied across said ferromagnetic pinned layer and said soft magnetic free layer) in the range from +0.2 to +0.8 V and from ?0.8 to ?0.2 V.

Abstract: An information storage device having a hard disk has a metal probe that is brought closely to the surface of a multilayer film that includes a magnetic metal layer, a non-magnetic metal layer, and a magnetic metal layer up to a nano-meter order distance from the surface. The distance between the metal probe and the surface of the multilayer film, as well as the voltage to be applied are changed to change the state of the quantum well generated in the multilayer film, thereby changing the magnetizing direction relatively between the two magnetic metal layers. To read magnetization information from the hard disk, a change of an optically induced tunnel current is used. The change of the tunnel current is caused by a change of a plasmon resonance energy according to a relative change of the magnetizing direction between the magnetic metal layers.

Abstract: Disclosed is a magnetic memory apparatus which comprises a patterned magnetic recording medium in which multilayered films each having a first magnetic layer, a nonmagnetic metal layer or a nonmagnetic insulating layer and a second magnetic layer deposited discretely on a conductive electrode layer formed on a substrate, and a cantilever array having a plurality of cantilevers each having a conductive chip at its distal end. This provides a magnetic solid memory apparatus that has a large memory capacity and a super fast transfer rate, the merits of a hard disk apparatus, and a nanostructure and low power consumption, which are the merits of a semiconductor memory.

Abstract: Disclosed are a fast, highly-integrated and highly-reliable magnetoresistive random access memory (MRAM) and a semiconductor device which uses the MRAM. The semiconductor device performs the read-out operation of the MRAM using memory cells for storing information by using a change in magnetoresistance of a magnetic tunnel junction (MTJ) element with a high S/N ratio. Each memory cell includes an MTJ element and a bipolar transistor. The read-out operation is carried out by selecting a word line, amplifying a current flowing in the MTJ element of a target memory cell by the bipolar transistor and outputting the amplified current to an associated read data line.

Abstract: A magnetic head at high sensitivity and with enhanced output having a magnetoresistive element of high output and optimal for use in CPP-GMR, the magnetoresistive element comprising a pinned layer 606 containing a half-metal, a free layer 608 formed on one main surface of the pinned layer 606, a spacer 607 formed between the pinned layer 606 and the free layer 608, an anti-ferromagnetic layer 603 formed on the main surface of the pinned layer 606, a soft magnetic layer 604 formed between the pinned layer 606 and the anti-ferromagnetic layer 606, and a noble-metallic layer 605 formed between the pinned layer 606 and the soft magnetic layer.

Abstract: A magnetic head using a tunneling magnetoresistance effect realizing both high output and wide bandwidth. By providing a magnetic read head and magnetic reading/playback apparatus related to the present invention characterized by comprising: a lower magnetic shield, an upper magnetic shield, a first electrode layer formed on said lower magnetic shield, a first ferromagnetic layer laminated on one end of said first electrode layer through a first insulator, a second ferromagnetic layer laminated on another end of said first electrode layer through a second insulator, a detecting electrode connected to said first ferromagnetic layer, and a second electrode layer electrically connecting said second ferromagnetic layer with said upper magnetic shield; it becomes possible to reduce the capacitance between the first ferromagnetic layer and the insulator and widen the bandwidth of the detecting signal.

Abstract: Disclosed are a fast, highly-integrated and highly-reliable magnetoresistive random access memory (MRAM) and a semiconductor device which uses the MRAM. The semiconductor device performs the read-out operation of the MRAM using memory cells for storing information by using a change in magnetoresistance of a magnetic tunnel junction (MTJ) element with a high S/N ratio. Each memory cell includes an MTJ element and a bipolar transistor. The read-out operation is carried out by selecting a word line, amplifying a current flowing in the MTJ element of a target memory cell by the bipolar transistor and outputting the amplified current to an associated read data line.

Abstract: A light induction type thin film magnetic recording head according to the present invention includes a lower magnetic core (2) formed on a substrate, an upper magnetic core (6) whose front end part is connected to the lower magnetic core through a magnetic gap film and whose rear end part is directly connected to the lower magnetic core with a back contact part (11) formed of a magnetic substance, and an insulating layer (3) formed between the upper magnetic core and the lower magnetic core, characterized in that an optically transparent waveguide part (5) whose width is smaller than the width of the upper magnetic core and whose thickness is thinner than the thickness of the upper magnetic core is buried in the upper magnetic core, and a coil (8) which generates magnetic flux in a magnetic circuit composed of the upper magnetic core, lower magnetic core, magnetic gap, and back contact part is arranged around the back contact part.

Abstract: Disclosed is a magnetoresistance device which uses a ferromagnetic tunnel junction formed by inserting an insulating layer between two ferromagnetic layers and whose application to a magnetic head and a magnetoresistance memory is promising. The magnetoresistance device has a multilayer structure which has a ferromagnetic tunnel junction formed by lamination of a first ferromagnetic layer, an insulating layer and a second ferromagnetic layer, and in which at least one of the first and second ferromagnetic layers is a half-metallic ferromagnet formed of a material having such an electronic structure that one spin having a metallic band near Fermi energy has a gap at a level of higher energy than the Fermi energy and the other spin has a metallic band at the same level.

Abstract: Disclosed are a fast, highly-integrated and highly-reliable magnetoresistive random access memory (MRAM) and a semiconductor device which uses the MRAM. The semiconductor device performs the read-out operation of the MRAM using memory cells for storing information by using a change in magnetoresistance of a magnetic tunnel junction (MTJ) element with a high S/N ratio. Each memory cell includes an MTJ element and a bipolar transistor. The read-out operation is carried out by selecting a word line, amplifying a current flowing in the MTJ element of a target memory cell by the bipolar transistor and outputting the-amplified current to an associated read data line.

Abstract: A three terminal magnetoresistance head capable of providing a high output and a large output current is provided. A MIS junction multilayer film composed of a magnetic semiconductor, a metal magnetic multilayer film, and a tunnel magnetoresistance element is applied to a three terminal magnetoresistance device.

Abstract: A memory cell in a so-called MRAM by utilizing a tunnel magnetic resistance in the prior art has raised problems that a magnetic field to be applied to a TMR element is essentially weak since a word line for write is disposed apart from the TMR element, that a large current is required at the time of a writing operation, and that electric power consumption is large. In order to solve the above-described problems experienced in the prior art, the present invention provides an MRAM memory cell structure and its fabricating method in which a word line for write is disposed near a TMR element and surrounds it in three directions.

Abstract: A magnetic reproducing head and a magnetic recording head. The magnetic reproducing head includes a GMR or TMR magnetic sensor, and a flux guide for introducing a magnetic flux into the magnetic sensor. At least a portion of the flux guide includes a material which is capable of permitting the magnetic flux to pass therethrough at a temperature not lower than a predetermined temperature Tp, but not permitting the magnetic flux to pass therethrough at a temperature lower than Tp. Light is irradiated to only a portion of the flux guide to cause the temperature of the irradiated portion to rise up to Tp or more, thereby permitting a magnetic flux to pass only through the irradiated portion, thus narrowing the track width of magnetic reproducing head when detecting recorded information from the magnetic recording medium.

Abstract: A magnetoresistive head which has a high low resistance and a high MR ratio at room temperature and a S/N ratio that does not decrease sharply upon application of a bias voltage. The magnetoresistive head comprises a soft magnetic free layer, a non-magnetic insulating layer, and a ferromagnetic pinned layer. The ferromagnetic pinned layer may have a spin valve layer whose magnetization is fixed with respect to the magnetic field to be detected, and the soft magnetic free layer permits its magnetization to rotate in response to an external magnetic field, thereby changing the relative angle with the magnetization of said ferromagnetic pinned layer and producing the magnetoresistive effect. The absolute value of the magnetoresistive effect has a peak at a temperature in the range from about 0° C. to 60° C. and for a bias voltage Vs (applied across said ferromagnetic pinned layer and said soft magnetic free layer) in the range from +0.2 to +0.8 V and from −0.8 to −0.2 V.

Abstract: Disclosed is a magnetic memory apparatus which comprises a patterned magnetic recording medium in which multilayered films each having a first magnetic layer, a nonmagnetic metal layer or a nonmagnetic insulating layer and a second magnetic layer deposited discretely on a conductive electrode layer formed on a substrate, and a cantilever array having a plurality of cantilevers each having a conductive chip at its distal end. This provides a magnetic solid memory apparatus that has a large memory capacity and a super fast transfer rate, the merits of a hard disk apparatus, and a nanostructure and low power consumption, which are the merits of a semiconductor memory.

Abstract: The invention provides a magnetic head for perpendicular recording capable of recording with high linear recording density and high track density, and a magnetic disk drive incorporating the same. In order to achieve this, one or more sides of the main pole of the magnetic head for perpendicular recording except for the trailing side are formed in a taper with an appropriate angle against the tip surface of the main pole, and the yoke whose widest principal plane is in parallel to the tip surface is provided on the bottom of the main pole.

Abstract: A magnetic recording and reproducing head which includes a magnetic sensor, and a flux guide for introducing a magnetic flux into the magnetic sensor. At least a portion of the flux guide is constituted by a material which permits the magnetic flux to pass therethrough at a temperature of not lower than a predetermined temperature Tp, but not permit the magnetic flux to pass therethrough at a temperature of lower than Tp. Light is irradiated to only a portion of the flux guide to cause the temperature of the irradiated portion to rise up to Tp or more, thereby permitting a magnetic flux to pass only through the irradiated portion.

Abstract: Disclosed herein is a magneto-resistive device which has a high reproducing output and is suitable for use as CPP-GMR. The magneto-resistive device has a first magnetic layer, a second magnetic layer, and a non-magnetic spacer formed between said first and second magnetic layers, such that said first magnetic layer contains a magnetic material whose conduction electrons belong to a first energy band and said second magnetic layer contains a magnetic material whose conduction electrons belong to a second energy band, with said first and second energy bands being attributable to orbitals of the same kind, thereby increasing the ratio of change in magnetoresistance and adjusts electric resistance.

Abstract: A magnetoresistive head has a high low resistance and a high MR ratio at room temperature and a S/N ratio that does not decrease sharply upon application of a bias voltage. The magnetoresistive head includes a soft magnetic free layer, a non-magnetic insulating layer, and a ferromagnetic pinned layer. The ferromagnetic pinned layer may have a spin valve layer whose magnetization is fixed with respect to the magnetic field to be detected. The magnetization of the soft magnetic free layer is permitted to rotate in response to an external magnetic field, thereby changing the relative angle with the magnetization of the ferromagnetic pinned layer and producing a magnetoresistive effect whose absolute value has a peak at a temperature range of 0-60° C. with a bias voltage Vs (applied across the ferromagnetic pinned layer and the soft magnetic free layer) in ranges of +0.2 to +0.8 V and −0.8 to −0.2 V.