Patents by Inventor Kendra A. Lyons

Kendra A. Lyons has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Determining thermal profiles of semiconductor structures
    Patent number: 9638581
    Abstract: According to embodiments of the present invention, a semiconductor substrate is formed on at least a portion of a surface of a semiconductor substrate. The emitting layer is excited for a first predetermined time period. A first luminescent intensity value of the emitting layer is determined. In response to exposing the semiconductor substrate and the emitting layer to a condition for a second predetermined time period, a second luminescent intensity value of the emitting layer is determined. A thermal profile of at least the portion of the surface of the semiconductor substrate is determined utilizing the first luminescent intensity value and the second luminescent intensity value of the emitting layer. The thermal profile at least reflects information about one or more of the condition and the semiconductor substrate subsequent to exposure to the condition.
    Type: Grant
    Filed: June 12, 2014
    Date of Patent: May 2, 2017
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Nicholas G. Clore, Kendra A. Lyons, Andrew H. Norfleet, Jared P. Yanofsky
  • Self-healing crack stop structure
    Patent number: 9230921
    Abstract: A self-healing crack stop structure and methods of manufacture are disclosed herein. The structure comprises a crack stop structure formed in one or more dielectric layers and surrounding an active region of an integrated circuit chip. The crack stop comprises self healing material which, upon propagation of a crack, is structured to seal the crack and prevent further propagation of the crack.
    Type: Grant
    Filed: October 8, 2013
    Date of Patent: January 5, 2016
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Stephen P. Ayotte, Alissa R. Cote, Kendra A. Lyons, John C. Malinowski, Benjamin J. Pierce
  • DETERMINING THERMAL PROFILES OF SEMICONDUCTOR STRUCTURES
    Publication number: 20150362373
    Abstract: According to embodiments of the present invention, a semiconductor substrate is formed on at least a portion of a surface of a semiconductor substrate. The emitting layer is excited for a first predetermined time period. A first luminescent intensity value of the emitting layer is determined. In response to exposing the semiconductor substrate and the emitting layer to a condition for a second predetermined time period, a second luminescent intensity value of the emitting layer is determined. A thermal profile of at least the portion of the surface of the semiconductor substrate is determined utilizing the first luminescent intensity value and the second luminescent intensity value of the emitting layer. The thermal profile at least reflects information about one or more of the condition and the semiconductor substrate subsequent to exposure to the condition.
    Type: Application
    Filed: June 12, 2014
    Publication date: December 17, 2015
    Inventors: Nicholas G. Clore, Kendra A. Lyons, Andrew H. Norfleet, Jared P. Yanofsky
  • SELF-HEALING CRACK STOP STRUCTURE
    Publication number: 20150097271
    Abstract: A self-healing crack stop structure and methods of manufacture are disclosed herein. The structure comprises a crack stop structure formed in one or more dielectric layers and surrounding an active region of an integrated circuit chip. The crack stop comprises self healing material which, upon propagation of a crack, is structured to seal the crack and prevent further propagation of the crack.
    Type: Application
    Filed: October 8, 2013
    Publication date: April 9, 2015
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Stephen P. Ayotte, Alissa R. Cote, Kendra A. Lyons, John C. Malinowski, Benjamin J. Pierce