Patents by Inventor Kendrick H. Yuen
Kendrick H. Yuen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9799824Abstract: A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.Type: GrantFiled: June 1, 2016Date of Patent: October 24, 2017Assignee: QUALCOMM IncorporatedInventors: William H. Xia, Wenqing Wu, Kendrick H. Yuen, Abhishek Banerjee, Xia Li, Seung H. Kang, Jung Pill Kim
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Publication number: 20160276576Abstract: A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.Type: ApplicationFiled: June 1, 2016Publication date: September 22, 2016Inventors: William H. XIA, Wenqing WU, Kendrick H. YUEN, Abhishek BANERJEE, Xia LI, Seung H. KANG, Jung Pill KIM
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Patent number: 9385305Abstract: A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.Type: GrantFiled: February 19, 2013Date of Patent: July 5, 2016Assignee: QUALCOMM INCORPORATEDInventors: William H. Xia, Wenqing Wu, Kendrick H. Yuen, Abhishek Banerjee, Xia Li, Seung H. Kang, Jung Pill Kim
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Patent number: 9164729Abstract: A method and apparatus for generating random binary sequences from a physical entropy source having a state A and a state B by detecting whether the physical entropy source is in the state A or in the state B, attempting to shift the state of the physical entropy source to the opposite state in a probabilistic manner with less than 100% certainty, and producing one of four outputs based on the detected state and the state of the physical entropy source before the attempted shift. The outputs are placed in first and second queues and extracted in pairs from each queue. Random binary bits are output based on the sequences extracted from each queue.Type: GrantFiled: February 5, 2013Date of Patent: October 20, 2015Assignee: QUALCOMM INCORPORATEDInventors: Wenqing Wu, Peiyuan Wang, Raghu Sagar Madala, Senthil Kumar Govindaswamy, Kendrick H. Yuen, Robert P. Gilmore, Jung Pill Kim, Seung H. Kang
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Magnetic tunneling junction non-volatile register with feedback for robust read and write operations
Patent number: 9147454Abstract: A magnetic tunneling junction non-volatile register with feedback for robust read and write operations. In an embodiment, two MTJ devices are configured to store a logical 0 or a logical 1, and are coupled to drive an output node to a voltage indicative of the stored logical 0 or a logical 1. The output of a D flip-flop is fed to the two MTJ devices so that the state of the D flip-flop may be stored in the two MTJ devices during a store operation. During a read operation, the D flip-flop outputs the state of the two MTJ devices. Read disturbances are mitigated with the use of an edge detector coupled to the output node, so that a LOW voltage is provided to the D flip-flop if a rising voltage at the output node is detected.Type: GrantFiled: March 11, 2013Date of Patent: September 29, 2015Assignee: QUALCOMM IncorporatedInventors: Zhenyu Sun, Raghu Sagar Madala, Senthil Kumar Govindaswamy, Kendrick H. Yuen, Wenqing Wu, Peiyuan Wang -
Patent number: 9110746Abstract: Embodiments of the disclosure are directed to generating a random number. An embodiment of the disclosure passes a current from a read operation through a magnetic tunnel junction (MTJ) to cause a first magnetization orientation of a free layer to switch to a second magnetization orientation, the switch in magnetization orientation causing a change in a resistance of the MTJ, and periodically samples the resistance of the MTJ to generate a bit value for the random number.Type: GrantFiled: September 4, 2012Date of Patent: August 18, 2015Assignee: QUALCOMM IncorporatedInventors: Xiaochun Zhu, Wenqing Wu, David M. Jacobson, Seung H. Kang, Kendrick H. Yuen
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Patent number: 9053071Abstract: Sensor circuitry including probabilistic switching devices, such as spin-transfer torque magnetic tunnel junctions (STT-MTJs), is configured to perform ultra-low power analog to digital conversion and compressive sensing. The analog to digital conversion and compressive sensing processes are performed simultaneously and in a manner that is native to the devices due to their probabilistic switching characteristics.Type: GrantFiled: March 15, 2012Date of Patent: June 9, 2015Assignee: QUALCOMM, IncorporatedInventors: Abhishek Banerjee, Raghu Sagar Madala, Wenqing Wu, Kendrick H. Yuen, Chengzhi Pan
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Publication number: 20140231940Abstract: A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.Type: ApplicationFiled: February 19, 2013Publication date: August 21, 2014Applicant: QUALCOMM INCORPORATEDInventors: William H. Xia, Wenqing Wu, Kendrick H. Yuen, Abhishek Banerjee, Xia Li, Seung H. Kang, Jung Pill Kim
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Patent number: 8804413Abstract: A multi-free layer magnetic tunnel junction (MTJ) cell includes a bottom electrode layer, an anti-ferromagnetic layer on the bottom electrode layer, a fixed magnetization layer on the anti-ferromagnetic layer and a barrier layer on the fixed magnetization layer. A first free magnetization layer is on a first area of the barrier layer, and a capping layer is on the first free magnetization layer. A free magnetization layer is on a second area of the barrier layer, laterally displaced from the first area, and a capping layer is on the second free magnetization layer. Optionally current switches establish a read current path including the first free magnetization layer concurrent with not establishing a read current path including the second free magnetization layer. Optionally current switches establishing a read current path including the first and second free magnetization layer.Type: GrantFiled: August 16, 2012Date of Patent: August 12, 2014Assignee: QUALCOMM IncorporatedInventors: Xia Li, Wenqing Wu, Jung Pill Kim, Xiaochun Zhu, Seung H. Kang, Raghu Sagar Madala, Kendrick H. Yuen
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Publication number: 20140222880Abstract: A method and apparatus for generating random binary sequences from a physical entropy source having a state A and a state B by detecting whether the physical entropy source is in the state A or in the state B, attempting to shift the state of the physical entropy source to the opposite state in a probabilistic manner with less than 100% certainty, and producing one of four outputs based on the detected state and the state of the physical entropy source before the attempted shift. The outputs are placed in first and second queues and extracted in pairs from each queue. Random binary bits are output based on the sequences extracted from each queue.Type: ApplicationFiled: February 5, 2013Publication date: August 7, 2014Applicant: QUALCOMM INCORPORATEDInventors: Wenqing Wu, Peiyuan Wang, Raghu Sagar Madala, Senthil Kumar Govindaswamy, Kendrick H. Yuen, Robert P. Gilmore, Jung Pill Kim, Seung H. Kang
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MAGNETIC TUNNELING JUNCTION NON-VOLATILE REGISTER WITH FEEDBACK FOR ROBUST READ AND WRITE OPERATIONS
Publication number: 20140198563Abstract: A magnetic tunneling junction non-volatile register with feedback for robust read and write operations. In an embodiment, two MTJ devices are configured to store a logical 0 or a logical 1, and are coupled to drive an output node to a voltage indicative of the stored logical 0 or a logical 1. The output of a D flip-flop is fed to the two MTJ devices so that the state of the D flip-flop may be stored in the two MTJ devices during a store operation. During a read operation, the D flip-flop outputs the state of the two MTJ devices. Read disturbances are mitigated with the use of an edge detector coupled to the output node, so that a LOW voltage is provided to the D flip-flop if a rising voltage at the output node is detected.Type: ApplicationFiled: March 11, 2013Publication date: July 17, 2014Applicant: QUALCOMM INCORPORATEDInventors: Zhenyu Sun, Raghu Sagar Madala, Senthil Kumar Govindaswamy, Kendrick H. Yuen, Wenqing Wu, Peiyuan Wang -
Patent number: 8779824Abstract: Clock signals are distributed on a chip by applying an oscillating magnetic field to the chip. Local clock generation circuits including magnetic field sensors are distributed around the chip and are coupled to local clocked circuitry on the chip. The magnetic field sensors may include clock magnetic tunnel junctions (MTJs) in which a magnetic orientation of the free layer is free to rotate in the free layer plane in response to the applied magnetic field. The MTJ resistance alternates between a high resistance value and a low resistance value as the free layer magnetization rotates. Clock generation circuitry coupled to the clock MTJs senses voltage oscillations caused by the alternating resistance of the clock MTJs. The clock generation circuitry includes amplifiers, which convert the sensed voltage into local clock signals.Type: GrantFiled: December 17, 2012Date of Patent: July 15, 2014Assignee: QUALCOMM IncorporatedInventors: Wenqing Wu, Kendrick H. Yuen, David W. Hansquine, Robert P. Gilmore, Jeff A. Levin
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Publication number: 20140167831Abstract: Clock signals are distributed on a chip by applying an oscillating magnetic field to the chip. Local clock generation circuits including magnetic field sensors are distributed around the chip and are coupled to local clocked circuitry on the chip. The magnetic field sensors may include clock magnetic tunnel junctions (MTJs) in which a magnetic orientation of the free layer is free to rotate in the free layer plane in response to the applied magnetic field. The MTJ resistance alternates between a high resistance value and a low resistance value as the free layer magnetization rotates. Clock generation circuitry coupled to the clock MTJs senses voltage oscillations caused by the alternating resistance of the clock MTJs. The clock generation circuitry includes amplifiers, which convert the sensed voltage into local clock signals.Type: ApplicationFiled: December 17, 2012Publication date: June 19, 2014Applicant: QUALCOMM IncorporatedInventors: Wenqing Wu, Kendrick H. Yuen, David W. Hansquine, Robert P. Gilmore, Jeff A. Levin
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Publication number: 20140067890Abstract: Embodiments of the disclosure are directed to generating a random number. An embodiment of the disclosure passes a current from a read operation through a magnetic tunnel junction (MTJ) to cause a first magnetization orientation of a free layer to switch to a second magnetization orientation, the switch in magnetization orientation causing a change in a resistance of the MTJ, and periodically samples the resistance of the MTJ to generate a bit value for the random number.Type: ApplicationFiled: September 4, 2012Publication date: March 6, 2014Applicant: QUALCOMM IncorporatedInventors: Xiaochun Zhu, Wenqing Wu, David M. Jacobson, Seung H. Kang, Kendrick H. Yuen
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Patent number: 8625337Abstract: A probabilistic programming current is injected into a cluster of bi-stable probabilistic switching elements, the probabilistic programming current having parameters set to result in a less than unity probability of any given bi-stable switching element switching, and a resistance of the cluster of bi-stable switching elements is detected. The probabilistic programming current is injected and the resistance of the cluster state detected until a termination condition is met. Optionally the termination condition is detecting the resistance of the cluster of bi-stable switching elements at a value representing a multi-bit data.Type: GrantFiled: May 5, 2011Date of Patent: January 7, 2014Assignee: QUALCOMM IncorporatedInventors: Wenqing Wu, Kendrick H. Yuen, Xiaochun Zhu, Seung H. Kang, Matthew Michael Nowak, Jeffrey A. Levin, Robert Gilmore, Nicholas Yu
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Publication number: 20130245999Abstract: Sensor circuitry including probabilistic switching devices, such as spin-transfer torque magnetic tunnel junctions (STT-MTJs), is configured to perform ultra-low power analog to digital conversion and compressive sensing. The analog to digital conversion and compressive sensing processes are performed simultaneously and in a manner that is native to the devices due to their probabilistic switching characteristics.Type: ApplicationFiled: March 15, 2012Publication date: September 19, 2013Applicant: QUALCOMM IncorporatedInventors: Abhishek Banerjee, Raghu Sagar Madala, Wenqing Wu, Kendrick H. Yuen, Chengzhi Pan
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Publication number: 20130201757Abstract: A multi-free layer magnetic tunnel junction (MTJ) cell includes a bottom electrode layer, an anti-ferromagnetic layer on the bottom electrode layer, a fixed magnetization layer on the anti-ferromagnetic layer and a barrier layer on the fixed magnetization layer. A first free magnetization layer is on a first area of the barrier layer, and a capping layer is on the first free magnetization layer. A free magnetization layer is on a second area of the barrier layer, laterally displaced from the first area, and a capping layer is on the second free magnetization layer. Optionally current switches establish a read current path including the first free magnetization layer concurrent with not establishing a read current path including the second free magnetization layer. Optionally current switches establishing a read current path including the first and second free magnetization layer.Type: ApplicationFiled: August 16, 2012Publication date: August 8, 2013Applicant: QUALCOMM IncorporatedInventors: Xia Li, Wenqing Wu, Jung Pill Kim, Xiaochun Zhu, Seung H. Kang, Raghu Sagar Madala, Kendrick H. Yuen
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Publication number: 20130187247Abstract: A spin-torque transfer (STT) magnetic tunnel junction (MTJ) memory includes a unitary fixed magnetic layer, a magnetic barrier layer on the unitary fixed magnetic layer, a free magnetic layer having a plurality of free magnetic islands on the magnetic barrier layer, and a cap layer overlying the free magnetic layer. Also a method of forming an STT-MTJ memory.Type: ApplicationFiled: January 23, 2012Publication date: July 25, 2013Applicant: QUALCOMM IncorporatedInventors: Wenqing WU, Sean Li, Xiaochun Zhu, Raghu Sagar Madala, Seung H. Kang, Kendrick H. Yuen
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Publication number: 20110273926Abstract: A probabilistic programming current is injected into a cluster of bi-stable probabilistic switching elements, the probabilistic programming current having parameters set to result in a less than unity probability of any given bi-stable switching element switching, and a resistance of the cluster of bi-stable switching elements is detected. The probabilistic programming current is injected and the resistance of the cluster state detected until a termination condition is met. Optionally the termination condition is detecting the resistance of the cluster of bi-stable switching elements at a value representing a multi-bit data.Type: ApplicationFiled: May 5, 2011Publication date: November 10, 2011Applicant: QUALCOMM INCORPORATEDInventors: Wenqing Wu, Kendrick H. Yuen, Xiaochun Zhu, Seung H. Kang, Matthew Michael Nowak, Jeffrey A. Levin, Robert Gilmore, Nicholas Yu