Patents by Inventor Kendrick X. Liu

Kendrick X. Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8445383
    Abstract: A heterojunction between thin films of NCD and 4H—SiC was developed. Undoped and B-doped NCDs were deposited on both n? and p? SiC epilayers. I-V measurements on p+ NCD/n? SiC indicated Schottky rectifying behavior with a turn-on voltage of around 0.2 V. The current increased over eight orders of magnitude with an ideality factor of 1.17 at 30° C. Ideal energy-band diagrams suggested a possible conduction mechanism for electron transport from the SiC conduction band to either the valence band or acceptor level of the NCD film.
    Type: Grant
    Filed: September 5, 2008
    Date of Patent: May 21, 2013
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Karl D. Hobart, Tatyana I Feygelson, Marko J Tadjer, Joshua D. Caldwell, Kendrick X Liu, Francis J. Kub, Michael A Mastro, James E Butler
  • Publication number: 20090090918
    Abstract: A heterojunction between thin films of NCD and 4H—SiC was developed. Undoped and B-doped NCDs were deposited on both n? and p? SiC epilayers. I-V measurements on p+ NCD/n? SiC indicated Schottky rectifying behavior with a turn-on voltage of around 0.2 V. The current increased over eight orders of magnitude with an ideality factor of 1.17 at 30° C. Ideal energy-band diagrams suggested a possible conduction mechanism for electron transport from the SiC conduction band to either the valence band or acceptor level of the NCD film.
    Type: Application
    Filed: September 5, 2008
    Publication date: April 9, 2009
    Inventors: Karl D. Hobart, Tatyana I. Feygelson, Marko J. Tadjer, Joshua D. Caldwell, Kendrick X. Liu, Francis J. Kub