Abstract: In an embodiment of an integrated circuit structure having buried layer substrate isolation and a method for forming same, a buried layer having conductivity type opposite to that of an overlying well region is used for wells containing transistors prone to noise generation, where the wells are of the same conductivity type as the substrate. The buried layer may in some embodiments include a first portion underlying the transistor and a second portion spaced apart from and laterally surrounding the first portion. In some embodiments, the circuit may include a doped annular region of the same conductivity type as the buried layer, where the annular region contacts a portion of the buried layer and laterally surrounds the transistor. The circuit may further include metallization adapted to connect the well and annular region to opposite polarities of a power supply voltage, or in some embodiments to preclude such connection.

Abstract: A non-volatile SRAM cell including (i) a nonvolatile memory element, (ii) a volatile memory element coupled to the nonvolatile memory element and (iii) a gate circuit coupled to the nonvolatile memory element. The gate circuit is configured to transfer data to and from a first input/output line into the volatile memory element.

Abstract: A non-volatile memory cell comprising a first transistor and a second transistor. The first transistor may be configured to receive an input and a first voltage. The second transistor may be configured to receive said input and a second voltage. The first and second transistors are generally coupled to an output.

Abstract: A two-transistor, zero DC power, non-volatile inverter latch that can be made using floating-gate or SONOS technology to provide a consistent and/or reliable logic high and/or logic low output level. The inventive cell is useful for holding option settings in any custom integrated circuit or, more specifically, for holding configuration information (e.g., ASIC, PLD or FPGA interconnect data; configuration data for such ICs or for a clock/oscillator circuit or a microcontroller, etc.). The inventive cell outputs the data state immediately on power-up without any need for recall sequencing. The benefit of the invention comes from the potential for a very small cell which, in many applications, can substitute for non-volatile RAM.

Abstract: A counter includes an array of memory cells arranged in groups of memory cells, each group designating a counting decade, wherein each group of memory cells includes first and second word strings, each capable of storing a data word, and a fault flag, capable of indicating which word string contains the data word; sensing means coupled to the memory array for checking the status of the memory cells and for generating fault signals upon detection of a fault in a memory cell; logic means coupled to the memory cells and to the sensing means for selecting the first or second word string in response to a fault signal; wherein upon detection of a fault in a first word string, the data word is written into the second word string; and a central shifting unit coupled to the memory array for reading a data word stored in a word string into the shifting unit, incrementing the data word, and writing the incremented data word into its respective word string.

Abstract: A memory cell comprising a bistable latch having first and second nodes, at least two non-volatile transistors (NV1, NV2) each having a source, a drain and a control gate, the control gates being connected to the first node (NODE 1) and one of the source and drain of each transistor being connected to the second node (NODE 2), each non-volatile transistor (NV1, NV2) further having a substrate and a floating gate between the control and the substrate, and switching means (N1, N2, TG1) for enabling the transistors to be checked in circuit.

Abstract: Counter circuit apparatus which sequentially re-allocates lower-order counting operation in order to extend counter life. The counter is comprised of a plurality of lower order counters and at least one higher order counter. A count selection circuit is coupled to the plurality of counters which controls the counting thereof in response to applied event input signals. A map control circuit is coupled between the higher order counter and the count selection circuit which controls the count selection circuit in response to signals derived from the higher order counter. The map control circuit sequentially enables a predetermined one of the lower order counters to count individual ones of the applied event input signals. A count unscrambling circuit is coupled to the plurality of lower order counters and the map control circuit which produces an ordered count output signal that is indicative of the number of event input signals counted by the counter.

Abstract: Memory circuits having a floating gate transistor as a non-volatile storage element are constructed with a shunt transistor across the floating-gate transistor which in the event of a short circuit between the floating gate and the transistor substrate causes the memory to go into a predetermined fail-safe condition. The circuits are cross-coupled flip-flops with a driver and a complementary driver or load connected in series in each of the circuits, one driver or complementary driver or load being a floating gate transistor such as a FATMOS. Short circuiting of the floating gate to the control gate of the floating-gate transistor gives the same fail-safe condition.

Abstract: A non-volatile semiconductor memory circuit having at least one variable threshold FATMOS transistor in the cross-coupled lateral branches and a plurality of input switching transistors controlling operation of the circuit. Capacitive imbalance between the nodes of the circuit is reduced by having each transistor which is connected between a node and an input switching transistor driven by the same control signal as a corresponding transistor connected between the other node and an input switching transistor. This reduces the occurrence of wrong-state switching in the circuit during reading.