Patents by Inventor Keng-Jen Liu

Keng-Jen Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for removing oxide
    Patent number: 8969209
    Abstract: A method for removing oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A removing oxide process is performed to the substrate using nitrogen trifluoride (NF3) and ammonia (NH3) as a reactant gas, wherein the volumetric flow rate of NF3 is greater than that of NH3.
    Type: Grant
    Filed: August 13, 2013
    Date of Patent: March 3, 2015
    Assignee: United Microelectronics Corp.
    Inventors: Yen-Chu Chen, Teng-Chun Tsai, Chien-Chung Huang, Keng-Jen Liu
  • Method for clearing native oxide
    Patent number: 8642477
    Abstract: A method for clearing native oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A clearing process is performed to the substrate using nitrogen trifluoride (NF3) and ammonia (NH3) as a reactant gas, wherein the volumetric flow rate of NF3 is greater than that of NH3.
    Type: Grant
    Filed: May 30, 2008
    Date of Patent: February 4, 2014
    Assignee: United Microelectronics Corp.
    Inventors: Yen-Chu Chen, Teng-Chun Tsai, Chien-Chung Huang, Keng-Jen Liu
  • METHOD FOR REMOVING OXIDE
    Publication number: 20130316540
    Abstract: A method for removing oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A removing oxide process is performed to the substrate using nitrogen trifluoride (NF3) and ammonia (NH3) as a reactant gas, wherein the volumetric flow rate of NF3 is greater than that of NH3.
    Type: Application
    Filed: August 13, 2013
    Publication date: November 28, 2013
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Yen-Chu Chen, Teng-Chun Tsai, Chien-Chung Huang, Keng-Jen Liu
  • Method for clearing native oxide
    Patent number: 8536060
    Abstract: A method for clearing native oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A clearing process is performed to the substrate using nitrogen trifluoride (NF3) and ammonia (NH3) as a reactant gas, wherein the volumetric flow rate of NF3 is greater than that of NH3.
    Type: Grant
    Filed: May 10, 2012
    Date of Patent: September 17, 2013
    Assignee: United Microelectronics Corp.
    Inventors: Yen-Chu Chen, Teng-Chun Tsai, Chien-Chung Huang, Keng-Jen Liu
  • METHOD FOR CLEARING NATIVE OXIDE
    Publication number: 20120220134
    Abstract: A method for clearing native oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A clearing process is performed to the substrate using nitrogen trifluoride (NF3) and ammonia (NH3) as a reactant gas, wherein the volumetric flow rate of NF3 is greater than that of NH3.
    Type: Application
    Filed: May 10, 2012
    Publication date: August 30, 2012
    Inventors: Yen-Chu Chen, Teng-Chun Tsai, Chien-Chung Huang, Keng-Jen Liu
  • METHOD FOR CLEARING NATIVE OXIDE
    Publication number: 20090298294
    Abstract: A method for clearing native oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A clearing process is performed to the substrate using nitrogen trifluoride (NF3) and ammonia (NH3) as a reactant gas, wherein the volumetric flow rate of NF3 is greater than that of NH3.
    Type: Application
    Filed: May 30, 2008
    Publication date: December 3, 2009
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Yen-Chu Chen, Teng-Chun Tsai, Chien-Chung Huang, Keng-Jen Liu