Patents by Inventor Keng-Li Su
Keng-Li Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9219479Abstract: A through silicon via (TSV) repair circuit of a semiconductor apparatus is provided. The TSV repair circuit includes a first chip, at least one second chip, at least two TSVs, at least two data path circuits, and an output logic circuit. Each data path circuit includes an input driving circuit, a short-circuit detection circuit, a bias circuit, and a leakage current cancellation circuit. The input driving circuit transforms an input signal into a pending signal and transmits the pending signal to a first terminal of the corresponding TSV. The short-circuit detection circuit detects a short circuit between the corresponding TSV and a silicon substrate according to the input signal and the first terminal of the TSV and generates a short-circuit detection output signal. The leakage current cancellation circuit prevents a leakage current produced by a first level voltage from entering the silicon substrate according to the short-circuit detection output signal.Type: GrantFiled: April 21, 2013Date of Patent: December 22, 2015Assignee: Industrial Technology Research InstituteInventors: Pei-Ling Tseng, Keng-Li Su
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Patent number: 9136250Abstract: A through silicon via (TSV) repair circuit is provided. The TSV repair circuit includes at least two transmission control switches and at least two transmission path modules. Two transmission control switches transmit an input signal of a first chip or a second chip to one of two terminals in each of the transmission path modules according to a switch signal. Each transmission path module includes at least two data path circuits and corresponding TSVs. Each data path circuit includes an input driving circuit, a short-circuit detection circuit and a leakage current cancellation circuit. The short-circuit detection circuit detects whether to detect whether short-circuit on the TSV and a silicon substrate is present and generate a short-circuit detection output signal. The leakage current cancellation circuit to avoid a leakage current generated by a first level voltage to flow into the silicon substrate according to the short-circuit detection output signal.Type: GrantFiled: May 28, 2013Date of Patent: September 15, 2015Assignee: Industrial Technology Research InstituteInventors: Pei-Ling Tseng, Keng-Li Su
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Patent number: 9136843Abstract: TSV repair circuit of a semiconductor device includes a first chip, a second chip, at least two TSV, at least two data path circuits and an output logic circuit. Each data path circuit comprises an input driving circuit, a TSV detection circuit, a memory device, a protection circuit and a power control circuit. The TSV detection circuit detects a TSV status, the memory device keeps the TSV status, the protection circuit determines whether to pull a first end of the TSV to a ground voltage according to the TSV status, and the power control circuit prevents a leakage current of a power voltage from flowing through a substrate.Type: GrantFiled: July 30, 2014Date of Patent: September 15, 2015Assignee: Industrial Technology Research InstituteInventors: Pei-Ling Tseng, Keng-Li Su, Chih-Sheng Lin, Shyh-Shyuan Sheu
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Patent number: 9064837Abstract: A monitoring method of a three-dimensional integrated circuit (3D IC) is provided, wherein the method includes: providing a plurality of TSVs, providing a plurality of inverters; connecting the inverters with the plurality of TSVs as a circuit loop; enabling the circuit loop to oscillate; measuring an output signal on an output end of one of the plurality of inverters; and determining the manufacturing state of the plurality of TSVs of the 3D IC based on the output signal and apparatus using the same.Type: GrantFiled: June 11, 2012Date of Patent: June 23, 2015Assignee: Industrial Technology Research InstituteInventors: Keng-Li Su, Chih Sheng Lin, Chih-Wen Hsiao
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Patent number: 9059586Abstract: A TSV bidirectional repair circuit of a semiconductor apparatus is provided. The bidirectional repair circuit includes a first and a second bidirectional switches and at least two transmission path modules. The first and the second bidirectional switches determine whether to transmit an input signal of a first chip or a second chip to each of the transmission path modules according to a switch signal. Each transmission path module includes at least two data path circuits and corresponding TSVs. Each data path circuit includes an input driving circuit, a short-circuit detection circuit and a leakage current cancellation circuit. The short-circuit detection circuit detects whether short-circuit on the corresponding TSV and a silicon substrate is present according to the input signal and the corresponding TSV to produce a short-circuit detection output signal.Type: GrantFiled: May 23, 2013Date of Patent: June 16, 2015Assignee: Industrial Technology Research InstituteInventors: Pei-Ling Tseng, Keng-Li Su
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Publication number: 20140340113Abstract: TSV repair circuit of a semiconductor device includes a first chip, a second chip, at least two TSV, at least two data path circuits and an output logic circuit. Each data path circuit comprises an input driving circuit, a TSV detection circuit, a memory device, a protection circuit and a power control circuit. The TSV detection circuit detects a TSV status, the memory device keeps the TSV status, the protection circuit determines whether to pull a first end of the TSV to a ground voltage according to the TSV status, and the power control circuit prevents a leakage current of a power voltage from flowing through a substrate.Type: ApplicationFiled: July 30, 2014Publication date: November 20, 2014Inventors: Pei-Ling TSENG, Keng-Li SU, Chih-Sheng LIN, Shyh-Shyuan SHEU
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Publication number: 20140184322Abstract: A through silicon via (TSV) repair circuit is provided. The TSV repair circuit includes at least two transmission control switches and at least two transmission path modules. Two transmission control switches transmit an input signal of a first chip or a second chip to one of two terminals in each of the transmission path modules according to a switch signal. Each transmission path module includes at least two data path circuits and corresponding TSVs. Each data path circuit includes an input driving circuit, a short-circuit detection circuit and a leakage current cancellation circuit. The short-circuit detection circuit detects whether to detect whether short-circuit on the TSV and a silicon substrate is present and generate a short-circuit detection output signal. The leakage current cancellation circuit to avoid a leakage current generated by a first level voltage to flow into the silicon substrate according to the short-circuit detection output signal.Type: ApplicationFiled: May 28, 2013Publication date: July 3, 2014Applicant: Industrial Technology Research InstituteInventors: Pei-Ling Tseng, Keng-Li Su
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Publication number: 20140185174Abstract: A TSV bidirectional repair circuit of a semiconductor apparatus is provided. The bidirectional repair circuit includes a first and a second bidirectional switches and at least two transmission path modules. The first and the second bidirectional switches determine whether to transmit an input signal of a first chip or a second chip to each of the transmission path modules according to a switch signal. Each transmission path module includes at least two data path circuits and corresponding TSVs. Each data path circuit includes an input driving circuit, a short-circuit detection circuit and a leakage current cancellation circuit. The short-circuit detection circuit detects whether short-circuit on the corresponding TSV and a silicon substrate is present according to the input signal and the corresponding TSV to produce a short-circuit detection output signal.Type: ApplicationFiled: May 23, 2013Publication date: July 3, 2014Applicant: Industrial Technology Research InstituteInventors: Pei-Ling Tseng, Keng-Li Su
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Publication number: 20140184346Abstract: A voltage-controlled oscillator (VCO) is provided. The VCO includes an oscillator unit disposed on a substrate, and a varactor unit. The varactor unit is coupled to the oscillator unit to form a VCO loop. The varactor unit includes a varactor and at least one control terminal. The varactor is disposed in the substrate, and includes at least two through-silicon via (TSV) structures. The at least one control terminal renders the varactor unit to be biased to change a capacitance value of the varactor.Type: ApplicationFiled: June 11, 2013Publication date: July 3, 2014Inventors: Sih-Han LI, Chih-Sheng LIN, Hsin-Chi LAI, Keng-Li SU
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Publication number: 20140145753Abstract: A through silicon via (TSV) repair circuit of a semiconductor apparatus is provided. The TSV repair circuit includes a first chip, at least one second chip, at least two TSVs, at least two data path circuits, and an output logic circuit. Each data path circuit includes an input driving circuit, a short-circuit detection circuit, a bias circuit, and a leakage current cancellation circuit. The input driving circuit transforms an input signal into a pending signal and transmits the pending signal to a first terminal of the corresponding TSV. The short-circuit detection circuit detects a short circuit between the corresponding TSV and a silicon substrate according to the input signal and the first terminal of the TSV and generates a short-circuit detection output signal. The leakage current cancellation circuit prevents a leakage current produced by a first level voltage from entering the silicon substrate according to the short-circuit detection output signal.Type: ApplicationFiled: April 21, 2013Publication date: May 29, 2014Applicant: Industrial Technology Research InstituteInventors: Pei-Ling Tseng, Keng-Li Su
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Patent number: 8581419Abstract: A multi-chip stack structure including a first chip, a second chip, a shielding layer, and a plurality of conductive bumps is provided. The second chip is stacked on the first chip. The second chip has a plurality of through silicon via (TSV) structures to conduct a reference voltage. The shielding layer and the plurality of conductive bumps are disposed between the first chip and the second chip, and are electrically connected to the plurality of TSV structures. The shielding layer can isolate noises and improve signal coupling between two adjacent chips.Type: GrantFiled: December 15, 2010Date of Patent: November 12, 2013Assignee: Industrial Technology Research InstituteInventors: Keng-Li Su, Hsin-Chi Lai, Chih-Sheng Lin, Zhe-Hui Lin
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Publication number: 20120249178Abstract: A monitoring method of a three-dimensional integrated circuit (3D IC) is provided, wherein the method includes: providing a plurality of TSVs, providing a plurality of inverters; connecting the inverters with the plurality of TSVs as a circuit loop; enabling the circuit loop to oscillate; measuring an output signal on an output end of one of the plurality of inverters; and determining the manufacturing state of the plurality of TSVs of the 3D IC based on the output signal and apparatus using the same.Type: ApplicationFiled: June 11, 2012Publication date: October 4, 2012Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Keng-Li Su, Chih Sheng Lin, Chih-Wen Hsiao
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Patent number: 8219340Abstract: A monitoring method for Through-Silicon Vias (TSVs) of a three-dimensional integrated circuit (3D IC) is provided, wherein the 3D IC includes a plurality of TSVs, and the method includes: providing a plurality of inverters; connecting the inverters with the TSVs as a circuit; enabling the circuit to oscillate; measuring an output signal on an output end of one of the inverters; and determining the characteristic of TSVs of the 3D IC based on the output signal.Type: GrantFiled: May 4, 2009Date of Patent: July 10, 2012Assignee: Industrial Technology Research InstituteInventors: Keng-Li Su, Chih Sheng Lin, Chih-Wen Hsiao
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Publication number: 20120139092Abstract: A multi-chip stack structure including a first chip, a second chip, a shielding layer, and a plurality of conductive bumps is provided. The second chip is stacked on the first chip. The second chip has a plurality of through silicon via (TSV) structures to conduct a reference voltage. The shielding layer and the plurality of conductive bumps are disposed between the first chip and the second chip, and are electrically connected to the plurality of TSV structures. The shielding layer can isolate noises and improve signal coupling between two adjacent chips.Type: ApplicationFiled: December 15, 2010Publication date: June 7, 2012Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Keng-Li Su, Hsin-Chi Lai, Chih-Sheng Lin, Zhe-Hui Lin
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Patent number: 8164113Abstract: An electrostatic discharge (ESD) structure for a 3-dimensional (3D) integrated circuit (IC) through-silicon via (TSV) device is provided. The ESD structure includes a substrate, a TSV device which is formed through the substrate and is equivalent to a resistance-inductance-capacitance (RLC) device, and at least one ESD device which is disposed in the substrate and electrically connected to one end of the TSV device. The ESD structure can protect the 3D IC TSV device.Type: GrantFiled: September 22, 2009Date of Patent: April 24, 2012Assignee: Industrial Technology Research InstituteInventors: Chih-Sheng Lin, Chih-Wen Hsiao, Keng-Li Su
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Publication number: 20120018723Abstract: A test structure including at least one ground pad, an input pad, at least one first through-silicon via (TSV), at least one second TSV and an output pad is disclosed. The ground pad receives a ground signal during a test mode. The input pad receives a test signal during the test mode. The first TSV is coupled to the input pad. The output pad is coupled to the second TSV. No connection line occurs between the first and the second TSVs. During the test mode, a test result is obtained according to the signal of at least one of the first and the second TSVs, and structural characteristics can be obtained according to the test result.Type: ApplicationFiled: December 14, 2010Publication date: January 26, 2012Inventors: Keng-Li SU, Chih-Sheng Lin, Wen-Pin Lin, John H. Lau
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Patent number: 7894274Abstract: A memory with improved write current is provided, including a bit line, a write switch and a control circuit. The write switch is coupled between a voltage source and the bit line, and has a control terminal. Based on a bit line select signal, the control circuit controls the electric conductance of the write switch and discharges/charges the parasitic capacitors of the write switch. The voltage source is turned on after the control terminal of the write switch reaches a pre-determined voltage level.Type: GrantFiled: June 5, 2009Date of Patent: February 22, 2011Assignee: Industrial Technology Research InstituteInventors: Chih Sheng Lin, Min-Chuan Wang, Chih-Wen Hsiao, Keng-Li Su
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Publication number: 20100237386Abstract: An electrostatic discharge (ESD) structure for a 3-dimensional (3D) integrated circuit (IC) through-silicon via (TSV) device is provided. The ESD structure includes a substrate, a TSV device which is formed through the substrate and is equivalent to a resistance-inductance-capacitance (RLC) device, and at least one ESD device which is disposed in the substrate and electrically connected to one end of the TSV device. The ESD structure can protect the 3D IC TSV device.Type: ApplicationFiled: September 22, 2009Publication date: September 23, 2010Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chih-Sheng Lin, Chih-Wen Hsiao, Keng-Li Su
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Publication number: 20100153043Abstract: A monitoring method for Through-Silicon Vias (TSVs) of a three-dimensional integrated circuit (3D IC) is provided, wherein the 3D IC includes a plurality of TSVs, and the method includes: providing a plurality of inverters; connecting the inverters with the TSVs as a circuit; enabling the circuit to oscillate; measuring an output signal on an output end of one of the inverters; and determining the characteristic of TSVs of the 3D IC based on the output signal.Type: ApplicationFiled: May 4, 2009Publication date: June 17, 2010Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Keng-Li SU, Chih Sheng LIN, Chih-Wen HSIAO
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Patent number: 7738289Abstract: The present invention relates to a memory accessing circuit, which is for accessing a memory circuit with 2N impedance states. The memory accessing circuit includes a testing signal generating circuit, for generating a testing signal by detecting the impedance state of the memory circuit; a reference signal generating circuit, for generating 2N?1 reference signals by detecting the impedance states of a reference circuit having 2N?1 impedance paths; a median signal generating circuit, for generating (2N?1)?1, median signals by receiving the 2N?1 reference signals; and a comparing circuit, for comparing the testing signal and the (2N?1) median signals. The present invention further provides a memory accessing method thereof.Type: GrantFiled: June 10, 2008Date of Patent: June 15, 2010Assignee: Industrial Technology Research InstituteInventors: Min Chuan Wang, Chih Sheng Lin, Keng Li Su, Wei Chun Chang