Patents by Inventor Keng Ouyang

Keng Ouyang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Contact to n-GaN with Au termination
    Patent number: 6653215
    Abstract: A contact for n-type III-V semiconductor such as GaN and related nitride-based semiconductors is formed by depositing Al,Ti,Pt and Au in that order on the n-type semiconductor and annealing the resulting stack, desirably at about 400-600° C. for about 1-10 minutes. The resulting contact provides a low-resistance, ohmic contact to the semiconductor and excellent bonding to gold leads.
    Type: Grant
    Filed: October 5, 2001
    Date of Patent: November 25, 2003
    Assignee: Emcore Corporation
    Inventors: Michael G. Brown, Ivan Eliashevich, Keng Ouyang, Hari Venugopalan