Patents by Inventor Keng Tee

Keng Tee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MATERIAL ARCHITECTURE FOR THE FABRICATION OF LOW TEMPERATURE TRANSISTOR
    Publication number: 20070117326
    Abstract: A structure and method for forming a carbon-containing layer in at least a portion of the end of range regions of implanted PAI and/or doped regions. The C-containing layer/region getters defects from the implanted PAI region or doped region. Example embodiments show a C-containing layer under at FET. Other example embodiments show an implanted C-containing regions implanted into the EOR region of implanted doped regions, such as pocket regions, S/D regions and SDE regions. Low temperature anneals can be used because the carbon-containing layer reduces defects.
    Type: Application
    Filed: January 22, 2007
    Publication date: May 24, 2007
    Inventors: Chung Tan, Jinping Liu, Hyeokjae Lee, Keng Tee, Elgin Quek