Patents by Inventor Keng-Yu Chou
Keng-Yu Chou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160099271Abstract: An image sensor includes a substrate, dual-waveband photosensitive devices, at least one infrared photosensitive device, a transparent dielectric layer, at least one infrared band-pass filter, a color filter layer and a micro-lens layer. The dual-waveband photosensitive devices are disposed in the substrate, and each dual-waveband photosensitive device is configured to sense an infrared light and one visible light. The infrared photosensitive device is disposed in the substrate, in which the dual-waveband photosensitive devices and the infrared photosensitive device are arranged in an array. The transparent dielectric layer is disposed over the dual-waveband photosensitive devices and the infrared photosensitive device. The infrared band-pass filter is disposed in the transparent dielectric layer and corresponds to the infrared photosensitive device. The color filter layer is disposed to cover the transparent dielectric layer and the infrared band-pass filter.Type: ApplicationFiled: October 2, 2014Publication date: April 7, 2016Inventors: Keng-Yu CHOU, Kazuaki HASHIMOTO, Jen-Cheng LIU, Jhy-Jyi SZE, Wei-Chieh CHIANG, Pao-Tung CHEN
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Patent number: 9305966Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.Type: GrantFiled: January 29, 2015Date of Patent: April 5, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Keng-Yu Chou, Shuang-Ji Tsai, Min-Feng Kao
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Publication number: 20160080669Abstract: An image sensor includes a substrate, photosensitive devices, a color filter layer, a micro-lens layer and an infrared filter layer. The photosensitive devices are disposed in the substrate. The color filter layer is disposed to cover the photosensitive devices. The micro-lens layer is disposed on the color filter layer. The infrared filter layer directly covers the micro-lens layer.Type: ApplicationFiled: September 15, 2014Publication date: March 17, 2016Inventors: Keng-Yu CHOU, Kazuaki HASHIMOTO, Jen-Cheng LIU, Jhy-Jyi SZE, Wei-Chieh CHIANG, Pao-Tung CHEN
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Publication number: 20150279901Abstract: A method for forming a photo diode is provided. The method includes: forming a first pair of electrodes and a second pair of electrodes over a substrate by using a conductive layer; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a color filter layer over the photo conversion layer, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filter layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer, wherein the first pair of electrodes corresponds to the first pixel and the second pair of electrodes corresponds to the second pixel.Type: ApplicationFiled: June 5, 2015Publication date: October 1, 2015Inventors: TZU-JUI WANG, KENG-YU CHOU, CHUN-HAO CHUANG, MING-CHIEH HSU, REN-JIE LIN, JEN-CHENG LIU, DUN-NIAN YAUNG
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Publication number: 20150187834Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.Type: ApplicationFiled: March 17, 2015Publication date: July 2, 2015Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Keng-Yu Chou, Pao-Tung Chen, Wen-De Wang
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Patent number: 9064989Abstract: A method for forming a photo diode is provided. The method includes: forming a first pair of electrodes and a second pair of electrodes over a substrate by using a conductive layer; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a color filter layer over the photo conversion layer, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer, wherein the first pair of electrodes corresponds to the first pixel and the second pair of electrodes corresponds to the second pixel.Type: GrantFiled: August 30, 2013Date of Patent: June 23, 2015Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Tzu-Jui Wang, Keng-Yu Chou, Chun-Hao Chuang, Ming-Chieh Hsu, Ren-Jie Lin, Jen-Cheng Liu, Dun-Nian Yaung
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Patent number: 9064986Abstract: A method for forming a photo diode is provided. The method includes: forming a first bottom electrode corresponding to a first pixel and a second bottom electrode corresponding to a second pixel over a substrate; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a top electrode over the photo conversion layer; forming a color filter layer over the top electrode, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer.Type: GrantFiled: September 13, 2013Date of Patent: June 23, 2015Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Tzu-Jui Wang, Keng-Yu Chou, Chun-Hao Chuang, Ming-Chieh Hsu, Yuichiro Yamashita, Jen-Cheng Liu, Dun-Nian Yaung
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Publication number: 20150140722Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.Type: ApplicationFiled: January 29, 2015Publication date: May 21, 2015Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Keng-Yu Chou, Shuang-Ji Tsai, Min-Feng Kao
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Publication number: 20150076637Abstract: A method for forming a photo diode is provided. The method includes: forming a first bottom electrode corresponding to a first pixel and a second bottom electrode corresponding to a second pixel over a substrate; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a top electrode over the photo conversion layer; forming a color filter layer over the top electrode, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer.Type: ApplicationFiled: September 13, 2013Publication date: March 19, 2015Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: TZU-JUI WANG, KENG-YU CHOU, CHUN-HAO CHUANG, MING-CHIEH HSU, YUICHIRO YAMASHITA, JEN-CHENG LIU, DUN-NIAN YAUNG
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Patent number: 8981510Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.Type: GrantFiled: June 4, 2010Date of Patent: March 17, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Keng-Yu Chou, Wen-De Wang, Pao-Tung Chen
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Publication number: 20150061061Abstract: A method for forming a photo diode is provided. The method includes: forming a first pair of electrodes and a second pair of electrodes over a substrate by using a conductive layer; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a color filter layer over the photo conversion layer, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer, wherein the first pair of electrodes corresponds to the first pixel and the second pair of electrodes corresponds to the second pixel.Type: ApplicationFiled: August 30, 2013Publication date: March 5, 2015Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: TZU-JUI WANG, KENG-YU CHOU, CHUN-HAO CHUANG, MING-CHIEH HSU, REN-JIE LIN, JEN-CHENG LIU, DUN-NIAN YAUNG
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Patent number: 8969991Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.Type: GrantFiled: February 11, 2014Date of Patent: March 3, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Keng-Yu Chou, Shuang-Ji Tsai, Min-Feng Kao
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Publication number: 20140252523Abstract: A back side image sensor and method of manufacture are provided. In an embodiment a bottom anti-reflective coating is formed over a substrate, and a metal shield layer is formed over the bottom anti-reflective coating. The metal shield layer is patterned to form a grid pattern over a sensor array region of the substrate, and a first dielectric layer and a second dielectric layer are formed to at least partially fill in openings within the grid pattern.Type: ApplicationFiled: May 16, 2014Publication date: September 11, 2014Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Keng-Yu Chou, Shuang-Ji Tsai, Min-Feng Kao
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Patent number: 8809098Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a recrystallized silicon layer. The recrystallized silicon layer is formed on the back side of the substrate. The recrystallized silicon layer has different photoluminescence intensity than the substrate.Type: GrantFiled: November 25, 2013Date of Patent: August 19, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Yeur-Luen Tu, Jen-Cheng Liu, Keng-Yu Chou, Chung Chien Wang
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Publication number: 20140159190Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.Type: ApplicationFiled: February 11, 2014Publication date: June 12, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Keng-Yu Chou, Shuang-Ji Tsai, Min-Feng Kao
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Patent number: 8709854Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.Type: GrantFiled: September 14, 2012Date of Patent: April 29, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Keng-Yu Chou, Shuang-Ji Tsai, Min-Feng Kao
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Publication number: 20140073080Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a recrystallized silicon layer. The recrystallized silicon layer is formed on the back side of the substrate. The recrystallized silicon layer has different photoluminescence intensity than the substrate.Type: ApplicationFiled: November 25, 2013Publication date: March 13, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Yeur-Luen Tu, Jen-Cheng Liu, Keng-Yu Chou, Chung Chien Wang
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Patent number: 8614495Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a recrystallized silicon layer. The recrystalized silicon layer is formed on the back side of the substrate. The recrystalized silicon layer has different photoluminescence intensity than the substrate.Type: GrantFiled: April 23, 2010Date of Patent: December 24, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Yeur-Luen Tu, Jen-Cheng Liu, Keng-Yu Chou, Chung Chien Wang
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Publication number: 20130299931Abstract: An embodiment method for forming an image sensor includes forming an anti-reflective coating over a surface of a semiconductor supporting a photodiode, forming an etching stop layer over the anti-reflective coating, forming a buffer oxide over the etching stop layer, and selectively removing a portion of the buffer oxide through etching, the etching stop layer protecting the anti-reflective coating during the etching. An embodiment image sensor includes a semiconductor disposed in an array region and in a periphery region, the semiconductor supporting a photodiode in the array region, an anti-reflective coating disposed over a surface of the semiconductor, an etching stop layer disposed over the anti-reflective coating, a thickness of the etching stop layer over the photodiode in the array region less than a thickness of the etching stop layer in the periphery region, and a buffer oxide disposed over the etching stop layer in the periphery region.Type: ApplicationFiled: August 28, 2012Publication date: November 14, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Keng-Yu Chou, Shuang-Ji Tsai, Min-Feng Kao
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Publication number: 20130299886Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.Type: ApplicationFiled: September 14, 2012Publication date: November 14, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Keng-Yu Chou, Shuang-Ji Tsai, Min-Feng Kao