Abstract: A silicone-containing polymer material containing an internal wetting agent and being excellent in transparency, the silicone-containing polymer material being improved in antifouling property against lipids. The polymer material of the present invention is a polymer material, which is obtained by polymerizing a polymerizable mixture containing monomer components (a) and a hydrophilic polymer component (b), wherein the monomer components (a) include a silicone-containing monomer (a-1) having a siloxane bond and being free of any hydroxyl group, and a compatibilizing monomer (a-2) having a hydrogen bonding proton-containing group and being free of any silicon atom, and wherein the compatibilizing monomer has four or more carbon atoms, excluding carbon atoms contained in a polymerizable functional group, and has a solubility of less than 0.03 g/mL in water at 25° C.

Abstract: A silicone-containing polymer material containing an internal wetting agent and being excellent in transparency, the silicone-containing polymer material being improved in antifouling property against lipids. The polymer material of the present invention is a polymer material, which is obtained by polymerizing a polymerizable mixture containing monomer components (a) and a hydrophilic polymer component (b), wherein the monomer components (a) include a silicone-containing monomer (a-1) having a siloxane bond and being free of any hydroxyl group, and a compatibilizing monomer (a-2) having a hydrogen bonding proton-containing group and being free of any silicon atom, and wherein the compatibilizing monomer has four or more carbon atoms, excluding carbon atoms contained in a polymerizable functional group, and has a solubility of less than 0.03 g/mL in water at 25° C.

Abstract: Provided is an ion gun that is capable of obtaining a higher plasma efficiency. This ion gun comprises: a first cathode 21 that is formed in a disc shape; a second cathode 12 that is formed in a disc shape and has an ion beam extraction hole 101a provided thereto; a first permanent magnet 14 that is disposed between the first cathode and the second cathode, and that is formed in a cylindrical shape; an anode 23 that has a cylindrical region 35a and an extending region 25a provided to one end of the cylindrical region; and an insulating material 26 that keeps the anode electrically insulated from the first cathode, the second cathode, and the first permanent magnet, all of which are electrically connected. The cylindrical region of the anode is disposed inside the inner diametrical position of the first permanent magnet, and the extending region of the anode is disposed so as to cross over the inner diametrical position of the first permanent magnet and to face the first cathode.

Abstract: An ion milling device which balances high processing speed and a wide processing region with smoothness of a processing surface. The ion milling device includes first to third ion guns that emit unfocused ion beams. An ion beam center of the third ion gun is included in a first plane defined by a normal to a surface of a sample and a mask end, and an ion beam center of the first ion gun and an ion beam center of the second ion gun are included in a second plane. The second plane is inclined toward the mask with respect to the first plane, and an angle formed by the first plane and the second plane is more than 0 degrees and 10 degrees or less. The processing surface of the sample is formed in a region where the emitted ion beams overlap on the surface of the sample.

Abstract: Provided is an ion milling device that can dramatically improve processing speed controllability and processing profile reproducibility. The ion milling device includes: an ion gun attached to a vacuum chamber and configured to emit an unfocused ion beam; a sample stand disposed in the vacuum chamber and configured to hold a sample; an ion beam characteristic measurement mechanism configured to measure an ion beam characteristic for estimating a processing profile of the sample processed by the ion beam; and a control unit. A magnetic field generation device is configured to generate a magnetic field in an ionization chamber of the ion gun and includes an electromagnet including an electromagnetic coil and a magnetic path. The control unit controls a value of a current, which is applied to the electromagnetic coil, based on the ion beam characteristic measured by the ion beam characteristic measurement mechanism.

Abstract: An ion milling device which balances high processing speed and a wide processing region with smoothness of a processing surface. The ion milling device includes first to third ion guns that emit unfocused ion beams. An ion beam center of the third ion gun is included in a first plane defined by a normal to a surface of a sample and a mask end, and an ion beam center of the first ion gun and an ion beam center of the second ion gun are included in a second plane. The second plane is inclined toward the mask with respect to the first plane, and an angle formed by the first plane and the second plane is more than 0 degrees and 10 degrees or less. The processing surface of the sample is formed in a region where the emitted ion beams overlap on the surface of the sample.

Abstract: Provided is an ion gun that is capable of obtaining a higher plasma efficiency. This ion gun comprises: a first cathode 21 that is formed in a disc shape; a second cathode 12 that is formed in a disc shape and has an ion beam extraction hole 101a provided thereto; a first permanent magnet 14 that is disposed between the first cathode and the second cathode, and that is formed in a cylindrical shape; an anode 23 that has a cylindrical region 35a and an extending region 25a provided to one end of the cylindrical region; and an insulating material 26 that keeps the anode electrically insulated from the first cathode, the second cathode, and the first permanent magnet, all of which are electrically connected. The cylindrical region of the anode is disposed inside the inner diametrical position of the first permanent magnet, and the extending region of the anode is disposed so as to cross over the inner diametrical position of the first permanent magnet and to face the first cathode.

Abstract: To provide an ion milling apparatus adapted to suppress the contamination of a beam forming electrode. The ion milling apparatus includes: an ion gun containing therein a beam forming electrode for forming an ion beam; a specimen holder for fixing a specimen to be processed by irradiation of an ion beam; a mask for shielding a part of the specimen from the ion beam; and an ion gun controller for controlling the ion gun.

Abstract: To provide an ion gun of a penning discharge type capable of achieving a milling rate which is remarkably higher than that in the related art, an ion milling device including the same, and an ion milling method. An ion generation unit includes a cathode that emits electrons, an anode that is provided within the ion generation unit and has an inner diameter of 5.2 mm or less, and magnetic-field generation means using a permanent magnet of which a maximum energy product ranges from 110 kJ/m3 to 191 kJ/m3.

Abstract: To provide an ion milling apparatus adapted to suppress the contamination of a beam forming electrode. The ion milling apparatus includes: an ion gun containing therein a beam forming electrode for forming an ion beam; a specimen holder for fixing a specimen to be processed by irradiation of an ion beam; a mask for shielding a part of the specimen from the ion beam; and an ion gun controller for controlling the ion gun.

Abstract: A silicone-containing polymer material containing an internal wetting agent and being excellent in transparency, the silicone-containing polymer material being improved in antifouling property against lipids. The polymer material of the present invention is a polymer material, which is obtained by polymerizing a polymerizable mixture containing monomer components (a) and a hydrophilic polymer component (b), wherein the monomer components (a) include a silicone-containing monomer (a-1) having a siloxane bond and being free of any hydroxyl group, and a compatibilizing monomer (a-2) having a hydrogen bonding proton-containing group and being free of any silicon atom, and wherein the compatibilizing monomer has four or more carbon atoms, excluding carbon atoms contained in a polymerizable functional group, and has a solubility of less than 0.03 g/mL in water at 25° C.

Abstract: To provide an ion gun of a penning discharge type capable of achieving a milling rate which is remarkably higher than that in the related art, an ion milling device including the same, and an ion milling method. An ion generation unit includes a cathode that emits electrons, an anode that is provided within the ion generation unit and has an inner diameter of 5.2 mm or less, and magnetic-field generation means using a permanent magnet of which a maximum energy product ranges from 110 kJ/m3 to 191 kJ/m3.

Abstract: To provide an ion milling system that can suppress an orbital shift of an observation electron beam emitted from an electron microscope column, the ion milling system includes: a Penning discharge type ion gun 100 that includes a permanent magnet 114 and that generates ions for processing a sample; and a scanning electron microscope for observing the sample, in which a magnetic shield 172 for reducing a leakage magnetic field from the permanent magnet 114 to the electron microscope column is provided.

Abstract: To provide an ion gun of a penning discharge type capable of narrowing a beam with a low ion beam current at a low acceleration voltage, an ion milling device including the same, and an ion milling method. An ion milling device that controls half width of a beam profile of an ion beam with which a sample is irradiated from an ion gun to be in a range of 200 ?m to 350 ?m. The device includes: the ion gun that ionizes a gas supplied from the outside, and emits an ion beam; a gas-flow-rate varying unit that varies a flow rate of the gas supplied to the ion gun; and a current measurement unit that measures a current value of the ion beam emitted from the ion gun. The gas-flow-rate varying unit sets a gas flow rate to be higher than a gas flow rate at which the ion beam current has a maximum value based on the current value measured by the current measurement unit and the flow rate of the gas determined by the gas-flow-rate varying unit.

Abstract: To provide an ion gun of a penning discharge type capable of achieving a milling rate which is remarkably higher than that in the related art, an ion milling device including the same, and an ion milling method. An ion generation unit includes a cathode that emits electrons, an anode that is provided within the ion generation unit and has an inner diameter of 5.2 mm or less, and magnetic-field generation means using a permanent magnet of which a maximum energy product ranges from 110 kJ/m3 to 191 kJ/m3.

Abstract: To provide an ion milling system that can suppress an orbital shift of an observation electron beam emitted from an electron microscope column, the ion milling system includes: a Penning discharge type ion gun 100 that includes a permanent magnet 114 and that generates ions for processing a sample; and a scanning electron microscope for observing the sample, in which a magnetic shield 172 for reducing a leakage magnetic field from the permanent magnet 114 to the electron microscope column is provided.

Abstract: A technique capable of maintaining the filter characteristics of a transmitting filter and a receiving filter by reducing the influences of heat from the power amplifier given to the transmitting filter and the receiving filter as small as possible in the case where the transmitting filter and the receiving filter are formed on the same semiconductor substrate together with the power amplifier in a mobile communication equipment typified by a mobile phone is provided. A high heat conductivity film HCF is provided on a passivation film PAS over the entire area of a semiconductor substrate 1S including an area AR1 on which an LDMOSFET is formed and an area AR2 on which a thin-film piezoelectric bulk wave resonator BAW is formed. The heat mainly generated in the LDMOSFET is efficiently dissipated in all directions by the high heat conductivity film HCF formed on the surface of the semiconductor substrate 1S.

Abstract: To provide an ion gun of a penning discharge type capable of achieving a milling rate which is remarkably higher than that in the related art, an ion milling device including the same, and an ion milling method. An ion generation unit includes a cathode that emits electrons, an anode that is provided within the ion generation unit and has an inner diameter of 5.2 mm or less, and magnetic-field generation means using a permanent magnet of which a maximum energy product ranges from 110 kJ/m3 to 191 kJ/m3.

Abstract: To provide an ion gun of a penning discharge type capable of narrowing a beam with a low ion beam current at a low acceleration voltage, an ion milling device including the same, and an ion milling method. An ion milling device that controls half width of a beam profile of an ion beam with which a sample is irradiated from an ion gun to be in a range of 200 ?m to 350 ?m. The device includes: the ion gun that ionizes a gas supplied from the outside, and emits an ion beam; a gas-flow-rate varying unit that varies a flow rate of the gas supplied to the ion gun; and a current measurement unit that measures a current value of the ion beam emitted from the ion gun. The gas-flow-rate varying unit sets a gas flow rate to be higher than a gas flow rate at which the ion beam current has a maximum value based on the current value measured by the current measurement unit and the flow rate of the gas determined by the gas-flow-rate varying unit.

Abstract: Provide a cellulose acylate film with small photoelastic coefficient, low moisture content and low haze, and a polarizing plate and a liquid crystal display device using the same. Also provided is a cellulose acylate film including at least cellulose acylate and a resin produced by hydrogenating a polymer containing a repeating unit derived from a monomer represented by the formula (1) below and hydroxyl group: in the formula (1), R1 represents a hydrogen atom or C1-5 alkyl group; each R2 represents a hydrogen atom or substituent, at least one of (R2)s being a hydroxyl group-containing substituent; moiety (A) may form, or does not necessarily form, a five- or six-membered ring; n represents an integer of 1 to 5, and when n is 2 or larger, the plurality of (R2)s may be same with or different from each other.