Patents by Inventor Kengo NISHIO

Kengo NISHIO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240139716
    Abstract: Provided is an exhaust gas purification catalyst providing a catalyst performance and an OSC performance at the same time even at low temperature. The present disclosure relates to an exhaust gas purification catalyst including a substrate and a catalyst coating layer coated on the substrate. The catalyst coating layer includes a first catalyst coating layer containing Pd and/or Pt and a second catalyst coating layer containing Rh. The first catalyst coating layer is formed from an end portion in an upstream side with respect to an exhaust gas flow direction in the exhaust gas purification catalyst. The second catalyst coating layer includes an upstream coating layer and a downstream coating layer. Rh in the upstream coating layer and the downstream coating layer are supported on specific carrier particles. Further, a particle diameter of Rh is controlled.
    Type: Application
    Filed: October 17, 2023
    Publication date: May 2, 2024
    Applicants: Toyota Jidosha Kabushiki Kaisha, Cataler Corporation
    Inventors: Takahiro NISHIO, Nobuyuki Takagl, Takumi Tojo, Shogo Shirakawa, Kengo Shimizu, Sho Hoshino, Shun Sakamoto, Yosuke Toda
  • Patent number: 11889776
    Abstract: A variable resistance non-volatile memory element includes first and second electrodes and a variable resistance layer between the electrodes. The layer has a resistance value reversibly variable based on an electrical signal. The layer includes a first variable resistance layer that includes an oxygen deficient first metal oxide containing a first metal element and oxygen, and a second variable resistance layer that includes a composite oxide containing the first metal element, a second metal element different from the first metal element, and oxygen, and having a different degree of oxygen deficiency from the first metal oxide. The composite oxide has a lower degree of oxygen deficiency than the first metal oxide. At room temperature, the composite oxide has a smaller oxygen diffusion coefficient than a second metal oxide containing the first metal element and oxygen, and having the degree of oxygen deficiency equal to that of the composite oxide.
    Type: Grant
    Filed: June 23, 2021
    Date of Patent: January 30, 2024
    Assignee: Nuvoton Technology Corporation Japan
    Inventors: Ryutaro Yasuhara, Satoru Fujii, Takumi Mikawa, Atsushi Himeno, Kengo Nishio, Takehide Miyazaki, Hiroyuki Akinaga, Yasuhisa Naitoh, Hisashi Shima
  • Publication number: 20210320248
    Abstract: A variable resistance non-volatile memory element includes first and second electrodes and a variable resistance layer between the electrodes. The layer has a resistance value reversibly variable based on an electrical signal. The layer includes a first variable resistance layer that includes an oxygen deficient first metal oxide containing a first metal element and oxygen, and a second variable resistance layer that includes a composite oxide containing the first metal element, a second metal element different from the first metal element, and oxygen, and having a different degree of oxygen deficiency from the first metal oxide. The composite oxide has a lower degree of oxygen deficiency than the first metal oxide. At room temperature, the composite oxide has a smaller oxygen diffusion coefficient than a second metal oxide containing the first metal element and oxygen, and having the degree of oxygen deficiency equal to that of the composite oxide.
    Type: Application
    Filed: June 23, 2021
    Publication date: October 14, 2021
    Inventors: Ryutaro YASUHARA, Satoru FUJII, Takumi MIKAWA, Atsushi HIMENO, Kengo NISHIO, Takehide MIYAZAKI, Hiroyuki AKINAGA, Yasuhisa NAITOH, Hisashi SHIMA