Abstract: A film forming method is provided in which, when a dielectric film is formed by sputtering a target, the number of particles to get adhered to the surface of a to-be-processed substrate immediately after film formation can be decreased to the extent possible without impairing the function of effectively suppressing the induction of abnormal discharging. A film forming method, according to this invention, of forming a dielectric film on a surface of a to-be-processed substrate by sputtering a target inside a vacuum chamber includes: at the time of sputtering the target, applying negative potential to the target in the form of pulses; and a frequency of applying the negative potential in the form of pulses is set to a range of 100 kHz or more and 150 kHz or below and an application time (Ton) of the negative potential is set to a range of 5 ?sec or longer and 8 ?sec or shorter.

Abstract: A target assembly is provided in which an abnormal discharging between a projected portion of a backing plate and a side surface of the target is prevented and also in which a bonding material to bond the target and the backing plate can be surely prevented from seeping to the outside and also which is easy in reusing the backing plate. The target assembly according to this invention having: a target made of an insulating material; and a backing plate bonded to one surface of the target via a bonding material, the backing plate having a projected portion which is projected outward beyond an outer peripheral edge of the target, further has an annular insulating plate. The annular insulating plate: encloses a circumference of the target while maintaining a predetermined clearance to a side surface of the target; and covers that surface of the projected portion.

Abstract: A target assembly is provided in which an abnormal discharging between a projected portion of a backing plate and a side surface of the target is prevented and also in which a bonding material to bond the target and the backing plate can be surely prevented from seeping to the outside and also which is easy in reusing the backing plate. The target assembly according to this invention having: a target made of an insulating material; and a backing plate bonded to one surface of the target via a bonding material, the backing plate having a projected portion which is projected outward beyond an outer peripheral edge of the target, further has an annular insulating plate. The annular insulating plate: encloses a circumference of the target while maintaining a predetermined clearance to a side surface of the target; and covers that surface of the projected portion.

Abstract: A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.

Abstract: The present invention provides a vacuum processing apparatus that allows easy exchange of processing chambers. A vacuum processing apparatus of the present invention has a processing chamber and a carrying-in-and-out chamber. The carrying-in-and-out chamber is fixed and located at a position above the processing chamber. The processing chamber can be lowered by a vertically moving mechanism. Therefore, the processing chamber is separated from the carrying-in-and-out chamber by lowering the processing chamber. A conveying means is connected to the processing chamber so that it is possible to easily convey the processing chamber after being removed from the carrying-in-and-out chamber. The operation for exchanging the processing chambers can be simpler than in the conventional systems.

Abstract: In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high.

Abstract: The present invention provides a vacuum processing apparatus that allows easy exchange of processing chambers. A vacuum processing apparatus of the present invention has a processing chamber and a carrying-in-and-out chamber. The carrying-in-and-out chamber is fixed and located at a position above the processing chamber. The processing chamber can be lowered by a vertically moving mechanism. Therefore, the processing chamber is separated from the carrying-in-and-out chamber by lowering the processing chamber. A conveying means is connected to the processing chamber so that it is possible to easily convey the processing chamber after being removed from the carrying-in-and-out chamber. The operation for exchanging the processing chambers can be simpler than in the conventional systems.

Abstract: A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.

Abstract: In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high.