Abstract: According to one embodiment, a sensor includes a base, a first support portion fixed to the substrate, and a first member supported by the first support portion. A gap is provided between the base and the first member. The first beam electrode and the second beam electrode satisfy at least one of a first condition, a second condition, a third condition, a fourth condition, a fifth condition, a sixth condition, a seventh condition, or an eighth condition.

Abstract: According to one embodiment, a sensor includes a base body, a support portion fixed to the base body, and a first member supported by the support portion. A gap is provided between the base body and a part of the first member. The first member includes a supported region, a first movable region, a first structure, a first support structure, a first connection structure, a first connect portion, and a first beam. The support portion is located between the base body and the supported region in a first direction from the base body to the support portion. The first beam extends along a second direction crossing the first direction. A first beam position of the first beam is located between a first movable region position of the first movable region and a support portion position of the support portion in the second direction.

Abstract: According to one embodiment, a sensor includes a base body, a support member, and a movable member. The base body includes a first face including a first base region. The support member is fixed to the first base region. The support member includes a support portion and an extending portion. The extending portion is connected to the support portion. The extending portion extends along a second direction crossing a first direction from the first base region to the support portion. A first width of the support portion in a third direction crossing a plane including the first direction and the second direction is wider than a second width of the extending portion in the third direction. The movable member is supported by the extending portion. A first gap is provided between the first face and the movable member.

Abstract: According to one embodiment, a sensor includes a base body including a first face, a first support portion, a first movable portion, and a first insulating member. The first face includes a first base region, a second base region, and a third base region. The first support portion is fixed to the third base region. The first movable portion is supported by the first support portion. The first movable portion includes a first movable region and a second movable region. A first gap is provided between the first base region and the first movable region. The first insulating member is fixed to the second base region, and located between the second base region and the second movable region in a first direction from the third base region to the first support portion. A second gap is provided between the first insulating member and the second movable region.

Abstract: According to one embodiment, a sensor includes a first detection element, and a controller. The first detection element includes a base body, a first support portion, a first movable member, a first detection electrode, and a first counter detection electrode. The first support portion is fixed to the base body. The first movable member is supported by the first support portion. The first detection electrode and the first counter detection electrodes are fixed to the base body. The first movable member includes a first movable portion. The first movable portion includes a first beam, a first conductive extending portion, and a first connecting portion. The first conductive extending portion includes a first extending portion, a first extending other portion, and a first extending intermediate. The first extending portion is between the first detection electrode and the first counter detection electrodes. The controller includes a first differential circuit.

Abstract: According to one embodiment, a sensor includes a stage, a driver, and a detector. The stage includes a first portion and a second portion. The driver is configured to rotate the stage. A rotation axis of the stage passes through the first portion and is along a first direction. A second direction from the first portion to the second portion crosses the first direction. The second portion is configured to rotate along a circumferential direction with the rotation axis as a center when the stage rotating. The detector is provided at the second portion. The detector includes a first detection element configured to detect a first acceleration including a component along the second direction, and a second detection element configured to detect a second acceleration including a component along the first direction.

Abstract: In authentication using sensor information, both reduction of processing burdens and assurance of security can be achieved. Provided is an information processing device including an authentication unit configured to authenticate a user on the basis of collected sensor information, and the authentication unit authenticates the user on the basis of a single feature quantity extracted on the basis of sensor information collected by at least two sensors and a single registered feature quantity extracted on the basis of sensor information collected in advance by the at least two sensors.

Abstract: According to one embodiment, a sensor includes a sensor element, a housing provided around the sensor element, and a processor. The sensor element includes a base body including first and second base body regions, and first and second sensor parts. The first sensor part is provided in the first base body region, and includes a first sensor movable part. The second sensor part is provided in the second base body region and includes first and second beams. The processor can derive a rotation angle and an angular velocity based on a signal obtained from the first sensor movable part. The processor can detect acceleration and a temperature based on a first resonance frequency of the first beam and a second resonance frequency of the second beam. The processor can correct one of the rotation angle or the angular velocity based on one of the temperature or the acceleration.

Abstract: According to one embodiment, a sensor a sensor includes a base, a first support portion fixed to the base, and a first movable portion supported by the first support portion. The first movable portion includes first and second movable base portions, a connecting base portion, first and second movable beams, and first and second movable conductive portions. The first movable beam includes a first beam end portion, a first beam other end portion, and a first beam intermediate portion. The second movable beam includes a second beam end portion, a second beam other end portion, and a second beam intermediate portion. The first movable conductive portion includes a first crossing conductive portion, a first extending conductive portion, and a first other extending conductive portion. The second movable conductive portion includes a second crossing conductive portion, a second extending conductive portion, and a second other extending conductive portion.

Abstract: A heat exchanger includes: heat transfer tubes aligned in an up-down direction; a liquid header connected to ends of the heat transfer tubes; and connection tubes aligned in the up-down direction and connected to the liquid header. The heat transfer tubes include: a first heat transfer tube disposed at a lowermost position; and a second heat transfer tube disposed above and adjacent to the first heat transfer tube. The connection tubes include: a first connection tube disposed at a lowermost position; and a second connection tube disposed above the first connection tube. The liquid header includes: a first flow path connected to the first connection tube and the first heat transfer tube; and a second flow path connected to the second connection tube and the second heat transfer tube.

Abstract: A heat transfer tube includes first flow paths aligned in the heat transfer tube. Each of the first flow paths includes a section with a rectangular shape that is elongated in a first direction parallel with an alignment direction of the first flow paths. Each of the first flow paths includes protrusions disposed on an inner surface. The section of each of the first flow paths has a long side having a first length and a short side having a second length, where a ratio of the first length to the second length is between 1.1 and 1.5.

Abstract: A semiconductor device includes a semiconductor substrate provided with a through hole that extends therethrough from a first surface to a second surface on a side opposite to the first surface, a device layer provided at the first surface of the semiconductor substrate which includes an electrode, an insulating layer that covers the device layer, a first through electrode that extends through the insulating layer, an insulating layer that extends from the second surface of the semiconductor substrate to a bottom surface of the through hole through an inner surface of the through hole of the semiconductor substrate, and in which the portion thereof in contact with the bottom surface has a tapered shape, and a second through electrode electrically connected to the electrode in the device layer that is exposed to the bottom surface of the through hole.

Abstract: A semiconductor device includes a semiconductor substrate provided with a through-hole, a device layer including a lower layer wiring, an insulating layer that covers the device layer, a first through-electrode that passes through the insulating layer, a first insulating film provided with an opening having a diameter that is substantially the same as or greater than an opening diameter of the through-hole of the semiconductor substrate, a second insulating film positioned on an upper side of the first insulating film and on an inner side surface of the through-hole of the semiconductor substrate, and a second through-electrode electrically connected to the lower layer wiring in the device layer from an upper side of the second insulating film through the inside of the through-hole of the semiconductor substrate.

Abstract: A semiconductor device includes a semiconductor substrate, a device layer located at an upper surface of the semiconductor substrate, an insulating layer located on the device layer, and a through electrode. The through electrode includes a body located in a through hole provided in the insulating layer and a head located on the body and the insulating layer and is electrically connected to an upper-layer wiring in the device layer. A perimeter of the head on a lower surface side thereof is smaller than a perimeter of the head on an upper surface side thereof.

Abstract: A semiconductor device includes a semiconductor substrate, a device layer located at an upper surface of the semiconductor substrate, an insulating layer located on the device layer, and a through electrode. The through electrode includes a body located in a through hole provided in the insulating layer and a head located on the body and the insulating layer and is electrically connected to an upper-layer wiring in the device layer. A perimeter of the head on a lower surface side thereof is smaller than a perimeter of the head on an upper surface side thereof.

Abstract: A semiconductor device includes a semiconductor substrate provided with a through-hole, a device layer including a lower layer wiring, an insulating layer that covers the device layer, a first through-electrode that passes through the insulating layer, a first insulating film provided with an opening having a diameter that is substantially the same as or greater than an opening diameter of the through-hole of the semiconductor substrate, a second insulating film positioned on an upper side of the first insulating film and on an inner side surface of the through-hole of the semiconductor substrate, and a second through-electrode electrically connected to the lower layer wiring in the device layer from an upper side of the second insulating film through the inside of the through-hole of the semiconductor substrate.

Abstract: A semiconductor device includes a semiconductor substrate provided with a through hole that extends therethrough from a first surface to a second surface on a side opposite to the first surface, a device layer provided at the first surface of the semiconductor substrate which includes an electrode, an insulating layer that covers the device layer, a first through electrode that extends through the insulating layer, an insulating layer that extends from the second surface of the semiconductor substrate to a bottom surface of the through hole through an inner surface of the through hole of the semiconductor substrate, and in which the portion thereof in contact with the bottom surface has a tapered shape, and a second through electrode electrically connected to the electrode in the device layer that is exposed to the bottom surface of the through hole.

Abstract: A semiconductor device including a semiconductor substrate having a first surface and a second surface, the first surface being configured for formation of a semiconductor element; a through hole extending through the semiconductor substrate; and a through electrode disposed in the through hole. The through electrode includes an insulating film disposed along a sidewall of the through hole, a conductive layer comprising a first material disposed along the insulating film, and an electrode layer comprising a second material filled inside the through hole over the conductive layer. The first material is softer than the second material. The second material has a melting point higher than a melting point of the first material. The electrode layer includes a void portion being closed near the second surface of the semiconductor substrate.

Abstract: A semiconductor device including a semiconductor substrate having a first surface and a second surface, the first surface being configured for formation of a semiconductor element; a through hole extending through the semiconductor substrate; and a through electrode disposed in the through hole. The through electrode includes an insulating film disposed along a sidewall of the through hole, a conductive layer comprising a first material disposed along the insulating film, and an electrode layer comprising a second material filled inside the through hole over the conductive layer. The first material is softer than the second material. The second material has a melting point higher than a melting point of the first material. The electrode layer includes a void portion being closed near the second surface of the semiconductor substrate.

Abstract: A first through hole 16 and a second through hole 17 are formed which penetrate from a rear surface 10a side of an element formation surface 10b of a semiconductor substrate (silicon substrate 10) in which an element section Ra is formed, to the element formation surface. An outer circumference insulation film 12 is formed on the side wall of the bottom of the second through hole 17 to surround the outer circumference of the second through hole 17 having a larger opening diameter among these through holes.