Patents by Inventor Kenichi Chahara

Kenichi Chahara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Liquid crystal display with nitrided insulating substrate for TFT
    Patent number: 6674502
    Abstract: A liquid crystal display includes an insulative substrate having a surface treated with an oxygen plasma and a nitrogen-plasma-treated layer formed over said surface of said substrate. A surface of said nitrogen-plasma-treated layer has a nitrogen concentration of about 10 mol % or more.
    Type: Grant
    Filed: November 16, 2000
    Date of Patent: January 6, 2004
    Assignee: Hitachi, Ltd.
    Inventors: Masatomo Terakado, Toshiki Kaneko, Takuya Takahashi, Kenichi Chahara, Kenichi Onisawa
  • Active matrix type liquid crystal display device having chromium alloy connecting portions which are other than the material of the data line or gate line
    Patent number: 6587164
    Abstract: In an active matrix type liquid crystal display device, at least material of one element, forming the connecting portion between signal transfer lines related to the scan lines and the data signal lines of the device, is an alloy of at least a chemical element selected from the group consisting of Nb, Mo, Ta, and W, with Cr, the scan lines and means for generating scan pulses are connected to each other via a first opening formed in an insulating film, the data signal lines and the means for generating image data are connected to each other via a second opening formed in an insulating film, a polycrystalline thin film, which is connected to the means for generating scan pulses, is inserted into the first opening, and a polycrystalline thin film, which is connected to the means for generating image data, is inserted into the second opening, and the polycrystalline thin film is composed of indium tin oxide, which is made of mainly indium oxide and added tin oxide, having a specific resistance of, at the utmost,
    Type: Grant
    Filed: January 18, 2001
    Date of Patent: July 1, 2003
    Assignee: Hitachi, Ltd.
    Inventors: Kenichi Onisawa, Kikuo Ono, Toshiki Kaneko, Kenichi Chahara, Katsunori Nakajima, Etsuko Nishimura, Takeshi Satou, Tetsuro Minemura
  • Liquid crystal display device having wiring layer made of nitride of Nb or nitride alloy containing Nb as a main component
    Patent number: 6462802
    Abstract: A wiring of a liquid crystal display device is made of a lamination film including a first layer of Nb or alloy containing Nb as its main component and a second layer of nitride of Nb or alloy containing Nb as its main component. A liquid crystal display device having such a wiring provides a wiring structure excellent in resistance to thermal oxidation.
    Type: Grant
    Filed: January 19, 1999
    Date of Patent: October 8, 2002
    Assignee: Hitachi, Ltd.
    Inventors: Etsuko Nishimura, Genshiro Kawachi, Kenichi Onisawa, Kenichi Chahara, Takeshi Sato, Katsumi Tamura
  • Liquid crystal display apparatus
    Patent number: 6317185
    Abstract: A liquid crystal display apparatus is high in manufacturing yield because defects caused by short-circuiting between the electrodes are eliminated. The liquid crystal display apparatus employs films made of an Al—Nd alloy of Nd content of 1 to 4.5 wt % in at least one of the gate wiring and the data wiring.
    Type: Grant
    Filed: May 28, 1999
    Date of Patent: November 13, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Yuuichi Harano, Kenichi Chahara, Kenichi Onisawa, Nobuyuki Suzuki, Masaru Takabatake, Toshiki Kaneko
  • Active matrix type liquid crystal display device
    Publication number: 20010002855
    Abstract: In an active matrix type liquid crystal display device, at least material of one element, forming the connecting portion between signal transfer lines related to the scan lines and the data signal lines of the device, is an alloy of at least a chemical element selected from the group consisting of Nb, Mo, Ta, and W, with Cr, the scan lines and means for generating scan pulses are connected to each other via a first opening formed in an insulating film, the data signal lines and the means for generating image data are connected to each other via a second opening formed in an insulating film, a polycrystalline thin film, which is connected to the means for generating scan pulses, is inserted into the first opening, and a polycrystalline thin film, which is connected to the means for generating image data, is inserted into the second opening, and the polycrystalline thin film is composed of indium tin oxide, which is made of mainly indium oxide and added tin oxide, having a specific resistance of, at the utmost,
    Type: Application
    Filed: January 18, 2001
    Publication date: June 7, 2001
    Inventors: Kenichi Onisawa, Kikuo Ono, Toshiki Kaneko, Kenichi Chahara, Katsunori Nakajima, Etsuko Nishimura, Takeshi Satou, Tetsuro Minemura
  • Active matrix type liquid crystal display device having chromium alloy connecting portions at pixel electrode or near driving circuit terminals
    Patent number: 6226060
    Abstract: In an active matrix type liquid crystal display device, at least material of one element, forming the connecting portion between signal transfer lines related to the scan lines and the data signal lines of the device, is an alloy of at least a chemical element selected from the group consisting of Nb, Mo, Ta, and W, with Cr, the scan lines and means for generating scan pulses are connected to each other via a first opening formed in an insulating film, the data signal lines and the means for generating image data are connected to each other via a second opening formed in an insulating film, a polycrystalline thin film, which is connected to the means for generating scan pulses, is inserted into the first opening, and a polycrystalline thin film, which is connected to the means for generating image data, is inserted into the second opening, and the polycrystalline thin film is composed of indium tin oxide, which is made of mainly indium oxide and added tin oxide, having a specific resistance of, at the utmost,
    Type: Grant
    Filed: October 27, 1997
    Date of Patent: May 1, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Kenichi Onisawa, Kikuo Ono, Toshiki Kaneko, Kenichi Chahara, Katsunori Nakajima, Etsuko Nishimura, Takeshi Satou, Tetsuro Minemura
  • Active-matrix liquid crystal display unit in which gate and/or data lines are made of Cr containing Ne-atoms
    Patent number: 5999236
    Abstract: An active-matrix liquid crystal display unit in which gate lines and drain lines disposed around a TFT device and a transparent pixel electrode are formed by a metal film including Ne atoms in a Cr film so as to provide a resistivity of 22 .mu..OMEGA.cm or below for the metal film and an absolute value of 200 MPa or below for the film stress.
    Type: Grant
    Filed: November 18, 1997
    Date of Patent: December 7, 1999
    Assignee: Hitachi, Ltd.
    Inventors: Katsunori Nakajima, Kenichi Onisawa, Kenichi Chahara, Mitsuhiro Kamei