Patents by Inventor Kenichi Hanawa
Kenichi Hanawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10861678Abstract: A plasma etching apparatus includes a second electrode configured to support a target substrate thereon, a second RF power supply unit configured to apply a second RF power for providing a bias for ion attraction to the second electrode, and a control system including and an RF controller. The RF controller is configured to switch the second RF power supply unit between a continuous mode that executes continuous supply of the second RF power at a constant power level and a power modulation mode that executes modulation of the second RF power between a first power and a second power larger than the first power. The RF controller is preset to control the second RF power supply unit such that the second RF power supply unit is first operated in the continuous mode for plasma ignition and then is switched into the power modulation mode.Type: GrantFiled: December 21, 2018Date of Patent: December 8, 2020Assignee: Tokyo Electron LimitedInventors: Akira Koshiishi, Noriyuki Kobayashi, Shigeru Yoneda, Kenichi Hanawa, Shigeru Tahara, Masaru Sugimoto
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Publication number: 20190115192Abstract: A plasma etching apparatus includes a second electrode configured to support a target substrate thereon, a second RF power supply unit configured to apply a second RF power for providing a bias for ion attraction to the second electrode, and a control system including and an RF controller. The RF controller is configured to switch the second RF power supply unit between a continuous mode that executes continuous supply of the second RF power at a constant power level and a power modulation mode that executes modulation of the second RF power between a first power and a second power larger than the first power. The RF controller is preset to control the second RF power supply unit such that the second RF power supply unit is first operated in the continuous mode for plasma ignition and then is switched into the power modulation mode.Type: ApplicationFiled: December 21, 2018Publication date: April 18, 2019Applicant: Tokyo Electron LimitedInventors: Akira Koshiishi, Noriyuki Kobayashi, Shigeru Yoneda, Kenichi Hanawa, Shigeru Tahara, Masaru Sugimoto
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Patent number: 10229815Abstract: A plasma etching apparatus includes a first RF power supply unit configured to apply a first RF power for plasma generation to a first electrode or a second electrode disposed opposite to each other in a process container configured to be vacuum-exhausted, a second RF power supply unit configured to apply a second RF power for ion attraction to the second electrode, and a controller configured to control the second RF power supply unit. The second RF power supply unit includes a second RF power supply and a second matching unit. The controller is preset to control the second RF power supply unit to operate in a power modulation mode that executes power modulation in predetermined cycles between a first power and a second power, while controlling the second matching unit to switch a matching operation in synchronism with the power modulation.Type: GrantFiled: September 17, 2014Date of Patent: March 12, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Akira Koshiishi, Noriyuki Kobayashi, Shigeru Yoneda, Kenichi Hanawa, Shigeru Tahara, Masaru Sugimoto
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Publication number: 20150000843Abstract: A plasma etching apparatus includes a first RF power supply unit configured to apply a first RF power for plasma generation to a first electrode or a second electrode disposed opposite to each other in a process container configured to be vacuum-exhausted, a second RF power supply unit configured to apply a second RF power for ion attraction to the second electrode, and a controller configured to control the second RF power supply unit. The second RF power supply unit includes a second RF power supply and a second matching unit. The controller is preset to control the second RF power supply unit to operate in a power modulation mode that executes power modulation in predetermined cycles between a first power and a second power, while controlling the second matching unit to switch a matching operation in synchronism with the power modulation.Type: ApplicationFiled: September 17, 2014Publication date: January 1, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Akira KOSHIISHI, Noriyuki KOBAYASHI, Shigeru YONEDA, Kenichi HANAWA, Shigeru TAHARA, Masaru SUGIMOTO
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Patent number: 8852385Abstract: An upper electrode and a lower electrode are disposed opposite to each other in a process container configured to be vacuum-exhausted. The upper electrode is connected to a first RF power supply configured to apply a first RF power for plasma generation. The lower electrode is connected to a second RF power supply configured to apply a second RF power for ion attraction. The second RF power supply is provided with a controller preset to control the second RF power supply to operate in a power modulation mode that executes power modulation in predetermined cycles between a first power set to deposit polymers on a predetermined film on a wafer and a second power set to promote etching of the predetermined film on the wafer.Type: GrantFiled: October 4, 2007Date of Patent: October 7, 2014Assignee: Tokyo Electron LimitedInventors: Akira Koshiishi, Noriyuki Kobayashi, Shigeru Yoneda, Kenichi Hanawa, Shigeru Tahara, Masaru Sugimoto
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Publication number: 20120312473Abstract: A high frequency power distribution device includes: a distribution member for uniformly dividing a high frequency power into divided high frequency powers; coaxial transmission lines through which the divided high frequency powers are introduced to the parallel plate electrodes; and an impedance control mechanism which controls an input impedance to decrease a current value. The distribution member includes: a high frequency power input unit for inputting the high frequency power to an input point; and a plurality of high frequency power output units spaced from each other at a regular interval, and each of the coaxial transmission lines are connected to one of the high frequency power output units, and the impedance control mechanism is provided at the high frequency power input unit.Type: ApplicationFiled: June 8, 2012Publication date: December 13, 2012Applicant: Tokyo Electron LimitedInventors: Kenichi Hanawa, Takahiro Tomita
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Publication number: 20080110859Abstract: An upper electrode and a lower electrode are disposed opposite to each other in a process container configured to be vacuum-exhausted. The upper electrode is connected to a first RF power supply configured to apply a first RF power for plasma generation. The lower electrode is connected to a second RF power supply configured to apply a second RF power for ion attraction. The second RF power supply is provided with a controller preset to control the second RF power supply to operate in a power modulation mode that executes power modulation in predetermined cycles between a first power set to deposit polymers on a predetermined film on a wafer and a second power set to promote etching of the predetermined film on the wafer.Type: ApplicationFiled: October 4, 2007Publication date: May 15, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Akira Koshiishi, Noriyuki Kobayashi, Shigeru Yoneda, Kenichi Hanawa, Shigeru Tahara, Masaru Sugimoto