Abstract: An optical fiber splicer includes a pair of retainers for retaining optical fibers to be spliced, a block formed with a groove of V-shaped cross-section, and abutment and pressure-contact mechanism for sliding terminal portions of the optical fibers in mutually opposite directions along the groove, producing substantially equal elastic forces in the terminal portions, bringing the terminal portions into abutment, and bringing the abutted terminal portions into pressure contact. An optical fiber splicing method includes a step of sliding terminal portions of optical fibers to be spliced along a groove of V-shaped cross-section in mutually opposite directions and producing substantially equal elastic forces in the terminal portions, and a step of bringing the terminal portions into abutment and then bringing the abutted terminal portions into pressure contact.

Abstract: A wafer stage having a built-in heater therein mounts a heat conductive disk which mounts thereon an object wafer having an AlAs layer therein. The heat conductive disk has a thermal conductivity equal to or higher than 100 watts/K/meter. The Al-oxidized area in the AlAs layer has excellent in-plane uniformity for the width thereof due to desirable heat distribution of the wafer caused by the heat conductive disk.

Abstract: A surface-emitting laser in which a first distributed Bragg reflector composed of an alternately stacked structure made of two kinds of thin film, an active layer and a second distributed Bragg reflector composed of an alternately stacked structure made of two kinds of thin film, are formed on a semiconductor substrate, successively, including a current stenosed layer having an oxidized area in a remote junction surface therein between at least one of the first and the second distributed Bragg reflectors and the active layer, and plural capacitance-reducing layers, each layer having a smaller oxidized area than the oxidized area in a remote junction surface constituting the current stenosed layer, at least one of the first and the second distributed Bragg reflectors, the plural capacitance-reducing layers, the current stenosed layer and the active layer being arranged successively, one of the first and the second distributed Bragg reflectors constituting a first conductive type Bragg reflector, the other co

Abstract: A field effect transistor having an excellent transfer conductance and an improved gate leakage current and breakdown voltage is provided. In the transistor, a multiquantum barrier structure 4 is arranged between a gate and a channel layer 3 along a channel layer 3 and having an effect of reflecting incident overflowing carriers a s waves in with with phase conditions of total reflection allowing mutual enhancement of the incident and reflected wave in a region between a channel layer 3 and a gate electrode 10 and/or in a region opposite to the gate electrode 10 relative to the channel layer 3.

Abstract: There is provided a semiconductor device comprising a Schottky junction having a very low leakage current and a high forward voltage. The device comprises a Schottky junction realized by a semiconductor 4 and a metal 6 and a multiquantum barrier structure 5 disposed on the interface of said semiconductor 4 and said metal 6 and having an effect of reflecting incident carriers as waves ?in phase conditions capable of allowing mutual enhancement of the incident and reflected waves!.

Abstract: An optical apparatus for controlling an angle of divergence of a ring beam which is capable of irradiating a ringed light beam having a uniform distribution of light intensity with an arbitrary angle of divergence with respect to the optical axis in the direction of 360.degree. concurrently. The optical apparatus comprises parallel beam generating means (2) to which a light beam (L1) output from a light source (1) is input and which outputs the incident light (L2) by transforming it into a parallel light beam (L3); ring beam generating means (3) to which the parallel beam (L3) output from the parallel beam generating means (2) is input and which outputs the input light (L4) by transforming it into a ringed light beam (L5) whose shape is annular when irradiated to an imaginary plane perpendicular to an optical axis (A--A); and divergent angle changing means (4) for changing an angle of divergence (.theta.

Abstract: There is provided a semiconductor device comprising a current confinement structure capable of reducing leakage currents. The semiconductor device comprising a current confinement structure and a multiquantum barrier structure 10 disposed in said current confinement structure and having an effect of reflecting incident carriers as waves in phase conditions capable of allowing mutual enhancement of the incident and reflected waves.

Abstract: This invention provides a blue light semiconductor optical device capable of effectively oscillating in a temperature range above room temperature. A double hetero structure semiconductor optical device according to the invention is made of a compound semiconductor containing Zn and/or Cd as group II elements and S and/or Se and/or Te as group VI elements and comprises an active layer, a light confining layer and a cladding layer arranged on a semiconductor substrate as well as a multiquantum barrier structure having a strained superlattice layer in part of the cladding layer or the light confining layer for an effect of reflecting incident carriers as waves in phase conditions capable of allowing mutual enhancement of the incident and reflected waves.

Abstract: A semiconductor luminous element has cladding layers on both sides of its active layer; and it has a multi-quantum barrier layer which is in contact with the active layer on at least a portion of at least one of the cladding layers. This multi-quantum barrier layer is formed of an alternating stack of superlattice barrier layers and superlattice well layers. The energy gap of the well layers is smaller than that of the active layer, and the quantized energy gap of the multi-quantum barrier layer is larger than the energy gap of the active layer. A superlattice structure for semiconductor devices, which confines electrons and holes, is formed out of the active layer and a cladding layer provided on at least one side of that active layer. A multi-quantum barrier layer is in contact with the active layer on at least a portion of the cladding layer. This multi-quantum barrier layer is formed of an alternating stack of superlattice barrier layers and superlattice well layers.

Abstract: The present invention relates to a laser diode and a highly precise light information processor using the same, particularly a laser diode which controls the diameter of a current flowing through an active layer and changes the emitting area of the active layer, a laser printer which is suited to half tone expression with high image quality by using the above semiconductor laser device, and an optical disk device which can record data surely.

Abstract: A method of manufacturing a surface-emitting-type semiconductor laser device having a buried structure. A GaAlAs film is used as a mask layer in forming a GaAlAs/GaAs system burying part around a GaAlAs/GaAs system buried part. The mask layer can be formed continuously together with an active layer, a cladding layer and the like which constitute the buried part by means of a crystal growing apparatus for forming the buried part. When the system is etched, the GaAlAs film mask prevents the system buried part from becoming undercut so that the mask has better resistance to peeling during subsequent processing.

Abstract: A superlattice structure composed of at least two kinds of crystal layers, such as semiconductor layers, being different in bandgap, being combined alternately with each others, and the physical parameters of the layers being designed so that phase differences of reflected waves of injected electrons or holes are substantially equal to .pi. multiplied by an odd numbered integer so that the energy potential barrier height is effectively increased. When used in semiconductor lasers, it allows the confining efficiency of injected carriers to be noticeably improved.

Abstract: A surface-emitting-type semiconductor laser device having a buried structure wherein a burying part having a current blocking function is formed around a buried part comprising an active region. A reflecting mirror consisting of a semiconductor multilayer film is installed on the buried part and the burying part, and the Bragg wavelength of this semiconductor multilayer film is set in matching with a longitudinal mode one mode higher than the longitudinal mode of oscillation in pulse operation. This semiconductor multilayer film has a configuration wherein two kinds of GaAlAs layers having different composition ratios of Al are laminated alternately, and the layer thickness of each GaAlAS layer constituting the semiconductor multilayer film is set so as to able to realize the Bragg wavelength calculated theoretically.

Abstract: A semiconductor laser formed on an InP substrate to have a hetero structure comprising a plurality of In.sub.1-x Ga.sub.x`As.sub.y P.sub.1-y (0.42y.ltoreq.x.ltoreq.0.5y,0.ltoreq.y.ltoreq.1) layers which are lattice-matched with InP, in which a light emitting layer included in the layers and having a forbidden band width larger than 0.6 eV but smaller than 0.9 eV at room temperature is sandwiched between two InP layers on the InP substrate, and in which there is provided between the light emitting layer and the InP layer grown thereon at least one buffer layer having a forbidden band width larger than the forbidden band width of the light emitting layer but smaller than the forbidden band width of InP. The forbidden band width of the buffer layer at room temperature may be larger than 0.8 eV but smaller than 1.0 eV.