Abstract: A film forming apparatus includes: a processing container; a substrate holder that holds the substrate in the processing container; and a target assembly disposed in an upper side of the substrate holder. The target assembly includes: a target made of metal, including a main body and a flange provided around the main body, and emitting sputter particles from the main body; a target holder including a target electrode configured to supply power to the target, and holding the target; a target clamp that clamps the flange of the target to the target holder; and an anti-deposition shield provided around the main body of the target to cover the flange, the target clamp, and the target holder, and having a labyrinth structure in which an inner tip end thereof is disposed to enter a recess between the main body of the target and the target clamp.

Abstract: A film forming apparatus for forming a film by magnetron sputtering includes a substrate support supporting the substrate, a holder holding a target for emitting sputtered particles, a magnet unit having a magnet, first and second movement mechanisms configured to periodically move the substrate support and the magnet unit, respectively, and a controller. The controller is configured to control the first movement mechanism and the second movement mechanism so that a phase in a periodic movement of the substrate support remains the same at a start of film formation and at an end of film formation, a phase in a periodic movement of the magnet unit remains the same at a start of film formation and at an end of film formation, and the phase in the periodic movement of the substrate support and the phase in the periodic movement of the magnet unit do not match during film formation.

Abstract: A film forming apparatus according to the present invention comprises: a processing chamber; a substrate holder for holding a substrate within the processing chamber; a target electrode, disposed above the substrate holder, for holding a metal target and supplying electrical power from a power source to the target; an oxidizing gas introduction mechanism for supplying an oxidizing gas to the substrate; and a gas supply unit for supplying an inert gas to the space where the target is disposed. Constituent metal is discharged from the target in the form of sputter particles, whereby a metal film is deposited on the substrate, and the metal film is oxidized by the oxidizing gas introduced by the oxidizing gas introduction mechanism, thereby forming a metal oxide film. When the oxidizing gas is introduced, the gas supply unit supplies the inert gas to the space where the target is disposed so that the pressure therein is positive with respect to the pressure in a processing space.

Abstract: A film forming apparatus includes: a processing container; a substrate holder that holds the substrate in the processing container; and a target assembly disposed in an upper side of the substrate holder. The target assembly includes: a target made of metal, including a main body and a flange provided around the main body, and emitting sputter particles from the main body; a target holder including a target electrode configured to supply power to the target, and holding the target; a target clamp that clamps the flange of the target to the target holder; and an anti-deposition shield provided around the main body of the target to cover the flange, the target clamp, and the target holder, and having a labyrinth structure in which an inner tip end thereof is disposed to enter a recess between the main body of the target and the target clamp.

Abstract: Manufacturing a magnetoresistive element excellent in RA and MR ratio is enabled. A method of manufacturing a magnetoresistive element of an embodiment includes forming a first laminate constituting a lower electrode on a base substrate, forming a second laminate which is a magnetoresistive effect laminate on the first laminate, and forming an upper electrode on the second laminate. The step of forming a first laminate includes forming a metal layer on the base substrate, forming a conductive amorphous layer on the metal layer, and performing ion etching on the conductive amorphous layer.

Abstract: A film formation apparatus and film formation method that improve film thickness uniformity. A rotation mechanism holds a target having a sputtered surface in a state inclined relative to a surface of a substrate. The rotation mechanism rotatably supports the target about an axis extending along a normal of the sputtered surface. The target supported by the rotation mechanism is sputtered to form a thin film on the surface of the substrate. When forming the thin film, the rotation mechanism maintains the rotational angle of the target.

Abstract: A sputtering device includes a vacuum chamber accommodating a substrate stage which rotates a substrate having a film formation surface. A target that has a sputtered surface formed from magnesium oxide is provided in a circumferential direction of the substrate. An angle of a normal to the film formation surface of the substrate and a normal to the sputtered surface of the target is defined as an angle of inclination ? for the target, and the target is disposed such that the angle of inclination ? satisfies ?50+?<?<?35+?. Here, ? is an angle represented by ?=arctan(W/H); H represents the height from the center of the substrate to the center of the target; and W represents the width from the center of the substrate to the center of the target.

Abstract: A photoelectric conversion device manufacturing method, includes: continuously forming a first p-type semiconductor layer, a first i-type semiconductor layer, and a first n-type semiconductor layer, which constitute a first-photoelectric conversion unit, and a second p-type semiconductor layer which constitutes a second-photoelectric conversion unit, in decompression chambers that are different from each other; exposing the second p-type semiconductor layer to an air atmosphere; and forming a second i-type semiconductor layer and a second n-type semiconductor layer, which constitute the second-photoelectric conversion unit, on the second p-type semiconductor layer of the second-photoelectric conversion unit which was exposed to the air atmosphere, in the same decompression chamber.

Abstract: A film formation apparatus and film formation method that improve film thickness uniformity. A rotation mechanism holds a target having a sputtered surface in a state inclined relative to a surface of a substrate. The rotation mechanism rotatably supports the target about an axis extending along a normal of the sputtered surface. The target supported by the rotation mechanism is sputtered to form a thin film on the surface of the substrate. When forming the thin film, the rotation mechanism maintains the rotational angle of the target.

Abstract: A magnetic device manufacturing apparatus that increases the unidirectional anisotropy constant (JK). A substrate (S) is placed in a substrate holder (24) in a film formation area (21a), the substrate (S) is heated to a predetermined temperature, and the processing pressure is reduced to 0.1 (Pa) or lower. A target (T2) of which a main component is an element forming the antiferromagnetic layer is sputtered with at least either one of Kr and Xe to form an antiferromagnetic layer. The antiferromagnetic layer includes an L12 ordered phase expressed by compositional formula Mn100-X-MX (where M is at least one element selected from the group consisting of Ru, Rh, Ir, and Pt, and X is 20(atom %)?X?30(atom %)).