Patents by Inventor Kenichi Inoue

Kenichi Inoue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4522885
    Abstract: A magnetic recording medium which comprises a substrate and a magnetic layer comprising magnetic powder and a resinous binder formed on the substrate, characterized in that the magnetic layer further comprises a lubricant and an unsaturated fatty acid ester, which is improved in durability.
    Type: Grant
    Filed: February 10, 1984
    Date of Patent: June 11, 1985
    Assignee: Hitachi Maxell, Ltd.
    Inventors: Masaya Funahashi, Kenichi Inoue, Kunio Mizushima
  • Patent number: 4326401
    Abstract: An apparatus for reverse redrawing of a cup is provided with an annular ring surrounding the upper end periphery of body portion of a die ring, provided concentrically with the die ring, a slightly larger clearance than the wall thickness of the cup to be redrawn being provided between the inside surface of the annular ring and the outside surface of the die ring.
    Type: Grant
    Filed: March 28, 1980
    Date of Patent: April 27, 1982
    Assignee: Daiwa Can Company, Ltd.
    Inventor: Kenichi Inoue
  • Patent number: 4101921
    Abstract: In a memory type insulated gate field effect semiconductor device including a semiconductor layer of one conductivity type, a source region of the opposite conductivity type formed in the surface of the semiconductor layer, a drain region of the opposite conductivity type formed in the surface of the semiconductor layer, a gate insulating layer affixed to the surface of the semiconductor layer, and a gate electrode deposited on the surface of the gate insulating layer, the gate insulating layer has a pair of thick gate guarding portions which exist on side of the source and drain regions, and a thin memory portion intermediate between the thick gate guarding portions, and a surface impurity concentration per square centimeter of the semiconductor layer under the thick gate guarding portions is different from a surface impurity concentration per square centimeter of the semiconductor layer under the tin memory portion.
    Type: Grant
    Filed: February 25, 1977
    Date of Patent: July 18, 1978
    Assignee: Sony Corporation
    Inventors: Takashi Shimada, Kenichi Inoue, Takaji Ohtsu, Hidenobu Mochizuki, Jiro Yamaguchi