Abstract: A method of manufacturing a semiconductor composite device includes picking up a composite integrated film from a formation substrate having a formation surface, the composite integrated film being in advance formed on the formation substrate; and bonding in a first bonding process the composite integrated film to a substrate front surface of a circuit board. The composite integrated film includes a base member thin film having a base member first surface and a base member second surface facing each other, one or more penetration parts each penetrating the base member thin film, one or more electrodes each including an electrode surface in a planar shape formed on the base member second surface's side, and an element disposed on the base member first surface. In the first bonding process, the base member second surface of the composite integrated film is bonded to the substrate front surface.

Abstract: In the electrode laminate of the present disclosure, a fixing member including a curable resin is disposed on at least one side face portion. The fixing member has a thin film region and a thick film region. The thin film region is formed on at least one end portion including the terminal end of the fixing member, and the thick film region is formed at a portion other than the thin film region. The thickness of the fixing member is thinnest at the terminal end. Further, the battery of the present disclosure includes the electrode laminate of the present disclosure and a laminate film sealing the electrode laminate.

Abstract: An image processing apparatus includes at least one memory configured to store instructions, and at least one processor configured to execute the instructions to process an image of a target region, and thereby compute a proximity index being an index relating to a proximity state of a plurality of persons captured in the image, and cause a predetermined apparatus to execute predetermined control, when the proximity index satisfies a criterion.

Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.

Abstract: An approach is provided in which the approach captures a set of individual indices corresponding to a set of psychological conditions of individual members of a team during a set of phases of a project. The approach computes, based on the set of individual indices, a set of team indices corresponding to the set of psychological conditions indicating a team state in each one of the set of phases of the project. The approach transmits a recommendation to a user in response to detecting a set of differences between the set of team indices and a set of expected values. The recommendation includes an action to increase the set of team indices.

Abstract: The method of the present invention comprises the steps of: previously obtaining correlation data between surface properties of the polishing pad dressed under a plurality of stages of dressing conditions and polishing effects of the work polished by the polishing pad dressed under the dressing conditions; determining an assumed dressing condition capable of achieving an object polishing effect from the correlation data; dressing the polishing pad under the assumed dressing condition determined; polishing the work; cleaning the polishing pad which has been used for polishing the work; and measuring a surface property of the cleaned polishing pad.

Abstract: The polishing apparatus comprises: a dressing section for dressing a polishing pad; a measuring section for measuring a surface property of the polishing pad; a polishing result measuring section for measuring a polishing result of a work; a storing section for storing correlation data between dressing condition data for dressing the polishing pad, surface property of the polishing pad and polishing results, which are learned by an artificial intelligence; and an input section for inputting an object polishing result. The artificial intelligence performs a first arithmetic process, in which the surface property of the polishing pad corresponding to the object polishing result is inversely estimated on the basis of the correlation data, and a second arithmetic process, in which the corresponding dressing condition is derived on the basis of the surface property of the polishing pad inversely estimated.

Abstract: The polishing apparatus comprises: a dressing section for dressing a polishing pad; a measuring section for measuring a surface property of the polishing pad; a polishing result measuring section for measuring a polishing result of a work; a storing section for storing correlation data between dressing condition data for dressing the polishing pad, surface property of the polishing pad and polishing results, which are learned by an artificial intelligence; and an input section for inputting an object polishing result. The artificial intelligence performs a first arithmetic process, in which the surface property of the polishing pad corresponding to the object polishing result is inversely estimated on the basis of the correlation data, and a second arithmetic process, in which the corresponding dressing condition is derived on the basis of the surface property of the polishing pad inversely estimated.

Abstract: A radiation dosimetry gel is excellent in heat resistance, and a radiation dosimeter includes the radiation dosimetry gel as a material for measuring a radiation dose. A radiation dosimetry gel includes a water-soluble organic polymer (A) having an organic acid salt structure or an organic acid anion structure, a silicate (B), and a dispersant (C) for the silicate, and a radiation dosimeter includes the radiation dosimetry gel as a material for measuring a radiation dose.

Abstract: A radiation dosimetry gel is excellent in heat resistance, and a radiation dosimeter includes the radiation dosimetry gel as a material for measuring a radiation dose. A radiation dosimetry gel includes a water-soluble organic polymer (A) having an organic acid salt structure or an organic acid anion structure, a silicate (B), and a dispersant (C) for the silicate, and a radiation dosimeter includes the radiation dosimetry gel as a material for measuring a radiation dose.

Abstract: The method of the present invention comprises the steps of: previously obtaining correlation data between surface properties of the polishing pad dressed under a plurality of stages of dressing conditions and polishing effects of the work polished by the polishing pad dressed under the dressing conditions; determining an assumed dressing condition capable of achieving an object polishing effect from the correlation data; dressing the polishing pad under the assumed dressing condition determined; polishing the work; cleaning the polishing pad which has been used for polishing the work; and measuring a surface property of the cleaned polishing pad.

Abstract: A punch constitutes, together with a die, a blanking die for punching a workpiece with a punching shape in which protrusions protrude outwards from an annular body. The punch includes a cylinder-shaped punch section and a holder section. In the punch section, a shape of the front end surface corresponding to the punching shape of the workpiece is continuous to a rear end surface, and includes a cutting edge on its front end surface. The holder section is a short cylinder including an inner circumferential surface formed in correspondence with an outer circumferential surface of the punch section to allow insertion of a rear part of the punch section. The protrusions are brought into intimate contact with the recesses of the holder section. A clearance is provided between a part of the punch section other than the protrusions and a part of the holder section other than the recesses.

Abstract: A punch constitutes, together with a die, a blanking die for punching a workpiece with a punching shape in which protrusions protrude outwards from an annular body. The punch includes a cylinder-shaped punch section and a holder section. In the punch section, a shape of the front end surface corresponding to the punching shape of the workpiece is continuous to a rear end surface, and includes a cutting edge on its front end surface. The holder section is a short cylinder including an inner circumferential surface formed in correspondence with an outer circumferential surface of the punch section to allow insertion of a rear part of the punch section. The protrusions are brought into intimate contact with the recesses of the holder section. A clearance is provided between a part of the punch section other than the protrusions and a part of the holder section other than the recesses.

Abstract: A semiconductor integrated circuit is provided. In the semiconductor integrated circuit, each of ESD protection circuitries is disposed between two of TSV bumps arrayed in a matrix, the two being arranged adjacent to each other. First main power lines are disposed to overlap P-channel ESD protection elements. Second main power lines are disposed to overlap N-channel ESD protection elements. The first and second main power lines are arranged orthogonally to each other.

Abstract: To measure three-dimensional dose distributions with a dosimeter, such as a gel dosimeter. In an embodiment of the present invention, provided is a gel dosimeter having water, as solvent or disperse medium, clay particles that swell with water, and recording material precursor, which are dissolved or dispersed with each other. The recording material precursor has an atom or ion, wherein the atom or ion changes its valence number by reacting with both of a radical and a molecular radical derivative. The radical is to be generated from the water ionized by irradiation of radiation rays, and the molecular radical derivative is a molecule to be formed by bonding the radicals with each other. By the time radiation rays are irradiated, the gel dosimeter has been free from a substance identical to the molecular radical derivative and has lost fluidity.

Abstract: A semiconductor integrated circuit is provided. In the semiconductor integrated circuit, each of ESD protection circuitries is disposed between two of TSV bumps arrayed in a matrix, the two being arranged adjacent to each other. First main power lines are disposed to overlap P-channel ESD protection elements. Second main power lines are disposed to overlap N-channel ESD protection elements. The first and second main power lines are arranged orthogonally to each other.

Abstract: A semiconductor integrated circuit is provided. In the semiconductor integrated circuit, each of ESD protection circuitries is disposed between two of TSV bumps arrayed in a matrix, the two being arranged adjacent to each other. First main power lines are disposed to overlap P-channel ESD protection elements. Second main power lines are disposed to overlap N-channel ESD protection elements. The first and second main power lines are arranged orthogonally to each other.

Abstract: To measure three-dimensional dose distributions with a dosimeter, such as a gel dosimeter. In an embodiment of the present invention, provided is a gel dosimeter having water, as solvent or disperse medium, clay particles that swell with water, and recording material precursor, which are dissolved or dispersed with each other. The recording material precursor has an atom or ion, wherein the atom or ion changes its valence number by reacting with both of a radical and a molecular radical derivative. The radical is to be generated from the water ionized by irradiation of radiation rays, and the molecular radical derivative is a molecule to be formed by bonding the radicals with each other. By the time radiation rays are irradiated, the gel dosimeter has been free from a substance identical to the molecular radical derivative and has lost fluidity.

Abstract: A semiconductor integrated circuit is provided. In the semiconductor integrated circuit, each of ESD protection circuitries is disposed between two of TSV bumps arrayed in a matrix, the two being arranged adjacent to each other. First main power lines are disposed to overlap P-channel ESD protection elements. Second main power lines are disposed to overlap N-channel ESD protection elements. The first and second main power lines are arranged orthogonally to each other.