Patents by Inventor Kenichi Kagami
Kenichi Kagami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7789965Abstract: A method of cleaning a UV irradiation chamber includes steps of: (i) after completion of irradiating a substrate with UV light transmitted through an optical transmitted window provided in the UV irradiation chamber, generating radical species of a cleaning gas outside the UV irradiation chamber; and (ii) introducing the radical species from the outside of the UV irradiation chamber into the UV irradiation chamber, thereby cleaning the optical transmitted window.Type: GrantFiled: September 19, 2007Date of Patent: September 7, 2010Assignee: ASM Japan K.K.Inventors: Kiyohiro Matsushita, Hideaki Fukuda, Kenichi Kagami
-
Patent number: 7763869Abstract: A UV light irradiating apparatus for irradiating a semiconductor substrate with UV light includes: a reactor in which a substrate-supporting table is provided; a UV light irradiation unit connected to the reactor for irradiating a semiconductor substrate placed on the substrate-supporting table with UV light through a light transmission window; and a liquid layer forming channel disposed between the light transmission window and at least one UV lamp for forming a liquid layer through which the UV light is transmitted. The liquid layer is formed by a liquid flowing through the liquid layer forming channel.Type: GrantFiled: March 23, 2007Date of Patent: July 27, 2010Assignee: ASM Japan K.K.Inventors: Kiyohiro Matsushita, Kenichi Kagami
-
Patent number: 7582575Abstract: A method for forming an insulation film on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, C, O, and H on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.Type: GrantFiled: December 5, 2005Date of Patent: September 1, 2009Assignee: ASM Japan K.K.Inventors: Atsuki Fukazawa, Kenichi Kagami
-
Publication number: 20090093135Abstract: Low dielectric constant materials are cured in a process chamber during semiconductor processing. The low dielectric constant materials are cured by irradiation with UV light. The atmosphere in the process chamber has an O2 concentration of about 25-10,000 ppm during the irradiation. The O2 limits the formation of —Si—H and —Si—OH groups in the low dielectric constant material, thereby reducing the occurrence of moisture absorption and oxidation in the low dielectric constant material.Type: ApplicationFiled: October 4, 2007Publication date: April 9, 2009Applicant: ASM Japan K.K.Inventors: Kiyohiro Matsushita, Kenichi Kagami
-
Publication number: 20090093134Abstract: Low dielectric constant materials are cured in a process chamber during semiconductor processing. The low dielectric constant materials are cured by irradiation with UV light. The atmosphere in the process chamber has a CO2 concentration of about 1-16% by volume during the irradiation. The CO2 limits the formation of —Si—H and —Si—OH groups in the low dielectric constant material, thereby reducing the occurrence of moisture absorption and oxidation in the low dielectric constant material.Type: ApplicationFiled: October 5, 2007Publication date: April 9, 2009Applicant: ASM Japan K.KInventors: Kiyohiro Matsushita, Kenichi Kagami
-
Patent number: 7501292Abstract: A method for managing UV irradiation for curing a semiconductor substrate, includes: passing UV light through a transmission glass window provided in a chamber for curing a semiconductor substrate placed in the chamber; monitoring an illuminance upstream of the transmission glass window and an illuminance downstream of the transmission glass window; determining a timing and/or duration of cleaning of the transmission glass window, a timing of replacing the transmission glass window, a timing of replacing a UV lamp, and/or an output of the UV light based on the monitored illuminances.Type: GrantFiled: July 19, 2007Date of Patent: March 10, 2009Assignee: ASM Japan K.K.Inventors: Kiyohiro Matsushita, Kenichi Kagami
-
Publication number: 20090023229Abstract: A method for managing UV irradiation for curing a semiconductor substrate, includes: passing UV light through a transmission glass window provided in a chamber for curing a semiconductor substrate placed in the chamber; monitoring an illuminance upstream of the transmission glass window and an illuminance downstream of the transmission glass window; determining a timing and/or duration of cleaning of the transmission glass window, a timing of replacing the transmission glass window, a timing of replacing a UV lamp, and/or an output of the UV light based on the monitored illuminances.Type: ApplicationFiled: July 19, 2007Publication date: January 22, 2009Applicant: ASM JAPAN K.K.Inventors: Kiyohiro MATSUSHITA, Kenichi KAGAMI
-
Publication number: 20080230721Abstract: A UV light irradiating apparatus for irradiating a semiconductor substrate with UV light includes: a reactor in which a substrate-supporting table is provided; a UV light irradiation unit connected to the reactor for irradiating a semiconductor substrate placed on the substrate-supporting table with UV light through a light transmission window; and a liquid layer forming channel disposed between the light transmission window and at least one UV lamp for forming a liquid layer through which the UV light is transmitted. The liquid layer is formed by a liquid flowing through the liquid layer forming channel.Type: ApplicationFiled: March 23, 2007Publication date: September 25, 2008Applicant: ASM JAPAN K.K.Inventors: Kiyohiro MATSUSHITA, Kenichi KAGAMI
-
Publication number: 20080066778Abstract: A method of cleaning a UV irradiation chamber includes steps of: (i) after completion of irradiating a substrate with UV light transmitted through an optical transmitted window provided in the UV irradiation chamber, generating radical species of a cleaning gas outside the UV irradiation chamber; and (ii) introducing the radical species from the outside of the UV irradiation chamber into the UV irradiation chamber, thereby cleaning the optical transmitted window.Type: ApplicationFiled: September 19, 2007Publication date: March 20, 2008Applicant: ASM JAPAN K.K.Inventors: Kiyohiro Matsushita, Hideaki Fukuda, Kenichi Kagami
-
Patent number: 7274354Abstract: A portable electronic apparatus disclosed has excellent operability, being capable of zooming, scrolling, moving a cursor, selecting an icon and others with one small operation unit. This portable electronic apparatus includes a display unit, the operation unit and a controller. The display unit displays information received or stored. The one operation unit is used for operations including moving of a pointer displayed on the display unit, the zooming and the scrolling of the information displayed on the display unit, the moving of the cursor and the selection of the icon. The controller executes the operations in response to operation of the operation unit.Type: GrantFiled: May 23, 2002Date of Patent: September 25, 2007Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Tamotsu Yamamoto, Kenichi Kagami, Toyoshi Fukumura
-
Patent number: 7229935Abstract: A method for forming a thin film includes: supplying an additive gas, a dilution gas, and a silicon-containing source gas into a reaction chamber wherein a substrate is placed; forming a thin film on the substrate by plasma CVD under a given pressure with a given intensity of radio-frequency (RF) power from a first point in time to a second point in time; at the second point in time, stopping the supply of the silicon-containing source gas; and at the second point in time, beginning reducing but not stopping the RF power, and beginning reducing the pressure, wherein the reduction of the RF power and the reduction of the pressure are synchronized up to a third point in time.Type: GrantFiled: September 2, 2004Date of Patent: June 12, 2007Assignee: ASM Japan K.K.Inventors: Atsuki Fukazawa, Kenichi Kagami, Manabu Kato
-
Publication number: 20060110931Abstract: A method for forming an insulation film on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, C, O, and H on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.Type: ApplicationFiled: December 5, 2005Publication date: May 25, 2006Applicant: ASM JAPAN K.K.Inventors: Atsuki Fukazawa, Kenichi Kagami
-
Publication number: 20050178333Abstract: A thin-film deposition system includes a plasma CVD reactor; a remote plasma chamber; and an electromagnetic wave generator for emitting electromagnetic waves to an interior of the reactor. Unwanted reaction products adhering to an inner surface of the reactor absorb electromagnetic waves are effectively removed.Type: ApplicationFiled: February 18, 2004Publication date: August 18, 2005Applicant: ASM JAPAN K.K.Inventors: Chou Loke, Kenichi Kagami, Kiyoshi Satoh
-
Publication number: 20050048797Abstract: A method for forming a thin film includes: supplying an additive gas, a dilution gas, and a silicon-containing source gas into a reaction chamber wherein a substrate is placed; forming a thin film on the substrate by plasma CVD under a given pressure with a given intensity of radio-frequency (RF) power from a first point in time to a second point in time; at the second point in time, stopping the supply of the silicon-containing source gas; and at the second point in time, beginning reducing but not stopping the RF power, and beginning reducing the pressure, wherein the reduction of the RF power and the reduction of the pressure are synchronized up to a third point in time.Type: ApplicationFiled: September 2, 2004Publication date: March 3, 2005Applicant: ASM JAPAN K.K/Inventors: Atsuki Fukazawa, Kenichi Kagami, Manabu Kato
-
Patent number: 6767836Abstract: Provided herein is a method for cleaning CVD reaction chambers with active oxygen species. The active oxygen species may also be mixed with active fluorine species. The active oxygen species are products of a plasma, which may be either generated within the CVD reaction chamber or generated remotely and introduced into the CVD reaction chamber.Type: GrantFiled: September 4, 2002Date of Patent: July 27, 2004Assignee: ASM Japan K.K.Inventors: Nelson Loke Chou San, Kenichi Kagami, Kiyoshi Satoh
-
Publication number: 20040051695Abstract: A portable electronic apparatus disclosed has excellent operability, being capable of zooming, scrolling, moving a cursor, selecting an icon and others with one small operation unit. This portable electronic apparatus includes a display unit, the operation unit and a controller. The display unit displays information received or stored. The one operation unit is used for operations including moving of a pointer displayed on the display unit, the zooming and the scrolling of the information displayed on the display unit, the moving of the cursor and the selection of the icon. The controller executes the operations in response to operation of the operation unit.Type: ApplicationFiled: October 7, 2003Publication date: March 18, 2004Inventors: Tamotsu Yamamoto, Kenichi Kagami, Toyoshi Fukumura
-
Publication number: 20040043626Abstract: Provided herein is a method for cleaning CVD reaction chambers with active oxygen species. The active oxygen species may also be mixed with active fluorine species. The active oxygen species are products of a plasma, which may be either generated within the CVD reaction chamber or generated remotely and introduced into the CVD reaction chamber.Type: ApplicationFiled: September 4, 2002Publication date: March 4, 2004Inventors: Nelson Loke Chou San, Kenichi Kagami, Kiyoshi Satoh
-
Publication number: 20030124991Abstract: A fold-up mobile terminal device comprising a lower case having a key operating portion, an upper case having a display portion, a coupling portion which makes the lower case and upper case rotatable, and a turnover preventing portion. The turnover preventing portion is attached to the rear of the upper case, which is the direction where a turnover is most likely to occur, in a direction approximately the same as that of a supporting surface of the lower case.Type: ApplicationFiled: December 27, 2002Publication date: July 3, 2003Inventors: Shinya Kiuchi, Jun Ikeda, Shuichi Ojima, Tsuyoshi Hirashima, Ryouta Hata, Kenichi Kagami