Abstract: A dental coupling member which can easily adjust the position of the lower jaw of the user without increasing the size of the coupling member is provided. The dental coupling member is attached to upper and lower oral appliances to couple them, and regulates displacement of the lower oral appliance to rear side. The dental coupling member has; an outer which is a cylindrical member having a through hole, to be attached to one oral appliance; an inner having a rod-shaped insertion portion to be inserted into an interior of the cylindrical portion and slidably held by the outer, the inner to be attached to the other oral appliance; and a stopper adjustably positioned inside the cylindrical portion, the stopper serve to limit a slide width of the insertion portion inside the cylindrical portion by adjustment of its position along the axial direction of the cylindrical portion.

Abstract: In a speaker device, a supporting member is arranged on a central axis, a diaphragm is provided on an outer circumference of the supporting member, and a damper is provided on the diaphragm. Preferably, the damper has a waterproof property. An inner peripheral edge portion of the damper is fixed to the supporting member on a sound output side with respect to the diaphragm, and an outer peripheral edge portion thereof is fixed to the diaphragm. The damper has a bent raised portion, on the outer peripheral side with respect to the fixing position to the diaphragm. By forming the bent portion on the outer peripheral end of the damper, it can be suppressed or prevented that the outer peripheral edge portion of the damper is deformed by a solvent of an adhesive agent at the time of attaching the outer peripheral edge portion of the damper and the diaphragm.

Abstract: A speaker device includes a vibration system having a voice coil bobbin, a diaphragm and a cap, and a magnetic circuit system. The diaphragm has a first fixing portion, a main cone portion, a second fixing portion, a drive cone portion and an opening. The first fixing portion is provided at the outer peripheral edge portion of the diaphragm to be fixed to an edge. The main cone portion formed into a parabolic shape is provided between the first fixing portion and the second fixing portion, i.e., in the vicinity of an outer peripheral portion of the drive cone portion. The second fixing portion is provided on a substantial border portion between the main cone portion and the drive cone portion, and the outer peripheral edge portion of the cap is mounted thereon. The drive cone portion formed into a curve or straight shape is provided between the second fixing portion and the opening. An inner peripheral edge portion of the drive cone portion is mounted onto an outer peripheral wall of the voice coil bobbin.

Abstract: A speaker device includes speaker units for reproducing high- and low-frequency sound, a frame having a guide structure formed thereat, a relay wire drawn from a voice coil in the speaker unit for reproducing high-frequency sound, a relay wire for the speaker unit for reproducing low-frequency sound, and a terminal unit electrically connected to the side of an amplifier. Each of the relay wires is electrically connected to the terminal unit via the guide structure. An electric signal is input into the speaker units for reproducing high- and low-frequency sound from the side of the amplifier. The guide structure has a wall standing on a center axis side of the speaker device to restrict the movement of the relay wires, even if variations occur thereby preventing the relay wires from being loosened or expanded from the position of the wall toward the center axis side of the speaker device.

Abstract: A speaker device includes a magnetic circuit system having a resin frame and a plate. The frame holds the magnetic circuit system, and has a step portion, a hole portion, a recess portion and a slit. The step portion is formed on an inner surface of a peripheral edge portion of the frame, and the hole portion penetrates from a bottom surface of the step portion to the recess portion. The recess portion is formed on an outer surface of the frame. The slit is formed on the outer surface of the frame, and extends from the recess portion to the outer side. The step portion, the hole portion, the recess portion and the slit communicate with each other. Adhesive agent is applied to a gap between the outer peripheral edge portion of the plate and the inner peripheral wall of the frame.

Abstract: A speaker device includes a resin frame and a resin grille mounted thereto. In the resin frame and the resin grille, engaging claws that engage with each other are formed, respectively. An inclined surface is formed on at least one of the engaging claws of the resin frame and the resin grille, and the other engaging claw engages with the one engaging claw on the inclined surface. When environmental temperature falls, the resin frame and the resin grille contract in the vertical and horizontal directions, and, when the temperature rises, the resin frame and the resin grille expand in the vertical and horizontal directions. However, even when such temperature changes occur, the engaging claw of the resin frame constantly engages with the inclined surface of the resin grille. Therefore, no backlash occurs between the engaging claw of the resin frame and the engaging claw of the resin grille.

Abstract: A speaker device is coaxial type two-way speaker, and includes speaker units for low-frequency band reproduction and for high-frequency band reproduction respectively. The speaker unit for low-frequency band reproduction includes a vibration system such as a resin frame and a magnetic circuit system such as a yoke. The resin frame has a mounting portion onto which the magnetic circuit system is mounted, and an annular projecting portion supporting a bottom surface of the yoke is formed on the upper surface of the mounting portion. Since the bottom surface of the yoke is supported only by the projecting portion, not by the entire bottom surface of the resin frame, even when flatness of the bottom surface of the resin frame is insufficient or different, the yoke can be horizontally mounted.

Abstract: A speaker device includes speaker units for high-frequency band reproduction and for low-frequency band reproduction and a supporting member. fixed to an opening of a center pole of the speaker unit for low-frequency band reproduction, serves as a lower frame of the speaker unit for low-frequency band reproduction, and has a frame portion onto which an upper end surface and engaging claws are formed. The speaker unit for high-frequency band reproduction has a frame portion, a magnetic circuit system, an upper frame, a diaphragm having an edge portion and a cover. On the upper frame, an engaging recess portion is formed, and at the outer peripheral edge portion of the diaphragm, a recess portion corresponding to the engaging recess portion is formed. The upper frame is fixed onto the upper surface of the magnetic circuit system, and the diaphragm is fixed onto the upper frame, respectively.

Abstract: A speaker gasket formed in a required shape out of elastic materials such as rubber has a plurality of bolt-through holes formed at regular intervals. The speaker gasket is formed with varying thicknesses, for example, in a such manner that the central portion in the width direction is formed with thickness greater or smaller than that of the portions on either side of the central portion; a plurality of recesses are formed; or the surfaces of the speaker gasket has a sawtooth waveform in the width direction.

Abstract: A mesh-connected tree (MCT) interconnect topology network which is a two-dimensional interconnect topology combining aspects of a conventional tree-network and a two-dimensional nearest-neighbor mesh network is implemented as a planar optical interconnect network.

Abstract: The invention provides a method of fabricating two dimensional semiconductor surface emitting laser and photo detector arrays for wavelength division multiplexing optical interconnections. A first stacked multiple layer structure on a first semiconductor substrate. An intermediate layer is grown on the first stacked multiple layer structure. A second stacked multiple layer structure is grown on the intermediate layer. A second semiconductor substrate is adhered on a top of the second stacked multiple layer structure by a heat treatment thereby a wafer is grown in successive growth processes to receive a selective wet etching so that the intermediate layer only is selectively etched to separate the first and second stacked multiple layer structures from one another, followed by forming surface emitting laser arrays and photo detector arrays on the first and second semiconductor substrates respectively.

Abstract: A semiconductor optical device including multilayer semiconductor device regions formed on a surface of a semiconductor substrate which act as an optical device respectively, and diffraction gratings formed on a back of the substrate optically coupled with at least one of said regions through the substrate. The regions have a function such as light emitting, light receiving, light amplification or light switching. The regions and gratings can be respectively formed on the surface and the back, monolithicaly, and polishing of the substrate provides a suitable thickness so that the regions and the gratings may be optically coupled with each other. The regions and gratings may be arranged at the optimum positions in the direction parallel to the substrate. Extremely precise alignment of its components and many channels can be easily obtained with compact size.

Abstract: A surface emitting photonic switching structure includes an intermediate semiconductor structure having pn junction is sandwiched between a first semiconductor multi-layer film mirror (DBR1) and a second semiconductor multi-layer film mirror (DBR2). A pair of electrodes are provided to the intermediate semiconductor structure and the pn junction therein is applied with reverse bias voltages for changing the effective optical length of the intermediate semiconductor structure so as to change transmission wavelength of light incident on the second multi-layer film mirror or the first multi-layer film mirror. The structure can be two-dimensionally integrated, be compact and is capable of operating with low voltages.

Abstract: A first insulation film is provided on the x axis side surfaces of a mesa on a substrate of a surface emitting semiconductor laser, and a second insulation film is provided on the y axis side surfaces of the mesa. The x and y axes are orthogonal to each other. The first and second insulation films are formed at different temperatures, so that stress applied to an active layer is different between the x and y axis directions. Consequently, the polarization of an output light is controlled to be on a selected axis from the x and y axis directions.

Abstract: A surface-normal optoelectronic device is provided which includes a first semiconductor layer of a first electroconductive type, a second semiconductor layer of a second electroconductive type having a polarity inverse to that of the first electroconductive type, a semiconductor active layer, a third semiconductor layer of the first electroconductive type, and a fourth semiconductor layer of the second electroconductive type, formed on a semiconductor substrate. The second and third layers are larger in forbidden band width than the active layer, said second layer is smaller in forbidden band width than a part of the first layer contacting the second layer, and the third layer is smaller in forbidden band width than a part of the fourth layer contacting the third layer. High resistance regions are formed vertically passing through the active layer, to surround its light-emitting region and to have a resistance higher than that of that region.

Abstract: A driving method for a pnpn semiconductor device includes the steps of applying a voltage higher than a holding voltage of the pnpn semiconductor device to an anode electrode thereof, supplying a control signal light to the pnpn semiconductor device to set the pnpn semiconductor device into an ON state, and supplying an information signal light to the pnpn semiconductor device to emit an output light. The control signal light and the information signal light are time-sequentially supplied to the pnpn semiconductor device under the voltage applied thereto. An apparatus for carrying out the driving method includes a light information transmission input line that is branched into a plurality of lines, where a light detection circuit is coupled to at least one of the lines. A synchronous driving circuit applies voltage to the pnpn semiconductor device which is coupled to one of the other lines of the information transmission input line.

Abstract: A semiconductor layer for reflecting an optical beam, the semiconductor layer includes a plurality of film pairs of narrow and wide band gap semiconductor films (21, 22) having a refractive index difference and narrower and wider band gaps, an intermediate semiconductor film (31) is interposed between the narrow and the wide band gap semiconductor films of each film pair and is made to have an intermediate film band gap which is varied so as to be equal to the narrower and the wider band gaps at its interfaces contiguous to the narrow and the wide band gap semiconductor films. The narrow band gap semiconductor film and a portion adjacent thereto in the intermediate semiconductor film are called a first composite layer and given a first total thickness which is approximately equal to a quarter of a first wavelength had by the optical beam in the first composite layer.

Abstract: A matrix of optical functional devices are divided into plural device units. Each of the device units includes at least two optical functional devices having light transmitting coatings. The coatings have transmission factors which are different from each other. Light signals emitted through the coatings from the at least two optical functional devices in each unit are received by a corresponding light receiving device among light receiving devices arranged in a one-dimensional pattern. In each device unit optical functional devices to be driven are selected, so that a coupling degree between each device unit and the corresponding light receiving device is changed.

Abstract: A semiconductor optical memory includes a gate layer composed of a p- first semiconductor layer, a p- or n- second semiconductor layer, and an n- third semiconductor layer provided between a cathode layer and an anode layer. Where the second layer is of n- type, an impurity concentration of the n- second semiconductor layer is lower than an impurity concentration of the n- third semiconductor layer, and a bandgap eneray of the n- third semiconductor layer is lower than bandgap energies of the cathode and anode layers. Where the second layer is of p- type, an impurity concentration of the p- second semiconductor layer is lower than an impurity concentration of the p- first semiconductor layer, and a bandgap energy of the p- first semiconductor layer is lower than bandgap energies of the cathode and anode layers. As a result, a response speed becomes as fast as several 100 Mb/s.

Abstract: At least one electric pulse having a predetermined voltage which is higher than a switching voltage for a pnpn semiconductor device and a predetermined width is applied across the pnpn semiconductor device. The electric pulse width is set not to turn the pnpn semiconductor device on. Consequently, a predetermined amount of carriers are accumulated in the pnpn semiconductor device. In this circumstance, a trigger light is supplied to the pnpn semiconductor device to be turned on. As a result, an energy of the trigger light is largely decreased as compared to a conventional method.