Abstract: Provided is a device for manufacturing an optical film having satisfactorily reduced thickness unevenness, by using a melt-casting film forming method, which device includes a casting die for discharging a molten film-forming material including a thermoplastic resin into a film-like shape; a pair of a first rotation roll and a second rotation roll between which the discharged film-shaped molten article is pinched to be cooled and solidified to make the film-shaped molten article; and two pairs of wind shield plates each of which pairs are arranged between the shaft-direction ends of the first and second rotation rolls and an end part in the width-direction of the film-shaped molten article, wherein the wind shield plates are placed approximately perpendicular to the surface of the film-shaped molten article, and wherein each pair of the wind shield plates are placed approximately in parallel.

Abstract: A semiconductor device, including a silicon substrate having a first major surface and a second major surface, a front surface device structure formed in a region of the first major surface, and a rear electrode formed in a region of the second major surface. The rear electrode includes, as a first layer thereof, an aluminum silicon film that is formed by evaporating or sputtering aluminum-silicon onto the second major surface, the aluminum silicon film having a silicon concentration of at least 2 percent by weight and a thickness of less than 0.3 ?m.

Abstract: Even when a substrate for treatment is joined with a supporting substrate having an outer shape larger than that of the substrate for treatment, with a photothermal conversion layer and an adhesive layer interposed, and the surface of the substrate for treatment on the side opposite this joined surface is treated, the occurrence of a defective external appearance on the treatment surface of the substrate for treatment is prevented. An adhesive layer 4 is formed on one surface of a substrate for treatment 3, a photothermal conversion layer 2 is formed on one surface of a supporting substrate 1 having a surface with an outer shape larger than that of the surface of the substrate for treatment, and the substrate for treatment 3 is bonded onto the surface of the photothermal conversion layer 2 with the adhesive layer 4 interposed, to obtain a layered member.

Abstract: Provided is a device for manufacturing an optical film having satisfactorily reduced thickness unevenness, by using a melt-casting film forming method, which device includes a casting die for discharging a molten film-forming material including a thermoplastic resin into a film-like shape; a pair of a first rotation roll and a second rotation roll between which the discharged film-shaped molten article is pinched to be cooled and solidified to make the film shaped molten article; and two pairs of wind shield plates each of which pairs are arranged between the shaft-direction ends of the first and second rotation rolls and an end part in the width-direction of the film-shaped molten article, wherein the wind shield plates are placed approximately perpendicular to the surface of the film-shaped molten article, and wherein each pair of the wind shield plates are placed approximately in parallel.

Abstract: An optical film characterized by a high degree of flatness that can be used as a phase difference film of a liquid crystal display, and a method for manufacturing this optical film according to melt-casting film forming method. A melt including a cellulose resin is extruded onto a rotary support member 5 (cooling roll) from a flow casting die 4. A rotary pinch member 6 (touch roll) is energized to the rotary support member 5, and a nip is formed between them. When the melt is sandwiched and pressed by the nip, a die line and irregularity in thickness are removed. The linear pressure of the rotary pinch member 6 and the temperature of the melt immediately before the melt is sandwiched and pressed by the nip are set within a predetermined range, whereby effective correction of the film flatness is achieved.

Abstract: A semiconductor apparatus includes an aluminum electrode film formed on a semiconductor chip; and a nickel plated layer formed on the aluminum electrode film, wherein a concentration of sodium and potassium present in the nickel plated layer and at an interface between the nickel plated layer and the aluminum electrode film is 3.20×1014 atoms/cm2 or less.

Abstract: A method of producing a semiconductor device that has a silicon substrate including a first major surface and a second major surface thereof, a front surface device structure being formed in a region of the first major surface, the method has a step of forming a rear electrode in a region of the second major surface, which includes evaporating or sputtering aluminum-silicon onto the second major surface to form an aluminum silicon film as a first layer of the rear electrode, the aluminum silicon film having a silicon concentration of at least 2 percent by weight when the thickness thereof is less than 0.3 ?m.

Abstract: A method for producing an optical film comprising the steps of: (i) melt casting a cellulose ester resin or a cycloolefin resin by extruding melt of the cellulose ester resin or the cycloolefin resin from a die onto a roll-shaped cooling drum; (ii) cooling and solidifying the extruded melt to form a film; (iii) stretching the film in a lateral direction of the film; and (iv) winding the film in a roll, wherein the cooling drum has plural regions divided predeterminedly in an axis direction of the cooling drum, a temperature of each region being independently controlled.

Abstract: Even when a substrate for treatment is joined with a supporting substrate having an outer shape larger than that of the substrate for treatment, with a photothermal conversion layer and an adhesive layer interposed, and the surface of the substrate for treatment on the side opposite this joined surface is treated, the occurrence of a defective external appearance on the treatment surface of the substrate for treatment is prevented. An adhesive layer 4 is formed on one surface of a substrate for treatment 3, a photothermal conversion layer 2 is formed on one surface of a supporting substrate 1 having a surface with an outer shape larger than that of the surface of the substrate for treatment, and the substrate for treatment 3 is bonded onto the surface of the photothermal conversion layer 2 with the adhesive layer 4 interposed, to obtain a layered member.

Abstract: A semiconductor device includes a silicon substrate having a first major surface and a second major surface opposite to the first major surface, a drift layer and a collector layer formed in sequence in the silicon substrate from the first major surface, and an aluminum silicon film formed on the second major surface. The drift layer is of a first conductivity type, and is surrounded by a semiconductor layer of a second conductivity type including the collector layer.

Abstract: A method of producing a semiconductor device that has a silicon substrate including a first major surface and a second major surface thereof, a front surface device structure being formed in a region of the first major surface, the method has a step of forming a rear electrode in a region of the second major surface, which includes evaporating or sputtering aluminum-silicon onto the second major surface to form an aluminum silicon film as a first layer of the rear electrode, the aluminum silicon film having a silicon concentration of at least 2 percent by weight when the thickness thereof is less than 0.3 ?m.

Abstract: A method of producing a semiconductor device having a thickness of 90 ?m to 200 ?m and with an electrode on the rear surface, which achieves a high proportion of non-defective devices by optimizing the silicon concentration and thickness of the aluminum-silicon electrode. A surface device structure is formed on a first major surface of a silicon substrate. A buffer layer and a collector layer are formed on the second major surface after grinding to reduce the thickness of the substrate. On the collector layer, a collector electrode is formed including a first layer of an aluminum-silicon film having a thickness of 0.3 ?m to 1.0 ?m and a silicon concentration of 0.5 percent to 2 percent by weight, preferably not more than 1 percent by weight.

Abstract: A semiconductor apparatus includes an aluminum electrode film formed on a semiconductor chip; and a nickel plated layer formed on the aluminum electrode film, wherein a concentration of sodium and potassium present in the nickel plated layer and at an interface between the nickel plated layer and the aluminum electrode film is 3.20×1014 atoms/cm2 or less.

Abstract: Disclosed is a method of manufacturing an optical film in which thickness unevenness and optical distortion are sufficiently prevented, employing a melt casting film formation method. The method is one manufacturing an optical film by extruding a melted film forming composition containing a thermoplastic resin from lip portions of a casting die to form a melted product in the form of a film and then holding the resulting melted product between a pair of rotary rollers thereby cooling and solidifying the melted product, wherein the method comprises heating a shield plate, which is provided in the vicinity of an inlet of a nip of the pair of rotary rollers and in the vicinity of the surface of at least one of the pair of rotary rollers, thereby heating an air stream occurring upon rotation of the rotary rollers.

Abstract: A method for producing an optical film comprising the steps of: (i) melt casting a cellulose ester resin or a cycloolefin resin by extruding melt of the cellulose ester resin or the cycloolefin resin from a die onto a roll-shaped cooling drum; (ii) cooling and solidifying the extruded melt to form a film; (iii) stretching the film in a lateral direction of the film; and (iv) winding the film in a roll, wherein the cooling drum has plural regions divided predeterminedly in an axis direction of the cooling drum, a temperature of each region being independently controlled.

Abstract: In a lapping machine comprising a lapping plate and a conditioning carrier disposed thereon, the carrier being provided with bores for receiving conditioning grindstone segments, the lapping plate is polished and conditioned by cooperatively rotating the lapping plate and the carrier and feeding loose abrasive grains to the lapping plate. The conditioning grindstone segment of a shape of arcuated trapezoid having an included angle of 180°-90° is fitted in the carrier bore.

Abstract: A lapping machine includes a lapping plate, and a workpiece carrier with a workpiece-holding hole disposed on the plate, a workpiece being fitted within the hole in the carrier. The workpiece is lapped while the plate and the carrier are individually rotated and loose abrasive grains are fed onto the plate. A synthetic resin-based elastic abrasive member having a Rockwell hardness (HRS) in the range of ?30 to ?100 is effective for resurfacing the lapping plate.

Abstract: Disclosed is a cellulose ester film having a dry thickness of 20 to 60 ?m, wherein the cellulose ester film is manufactured according to a solution cast film manufacture process comprising the steps of providing a cellulose ester dope, casting the cellulose ester dope on a support to form a cellulose ester web, peeling the cellulose ester web at a peel position from the support, transporting the peeled web to a dryer, drying the peeled web therein to form a cellulose ester film, and winding the cellulose ester film around a spool, the residual solvent content at the winding step of the cellulose ester film being not more than 0.05% by weight.

Abstract: A process for producing a polyurethane grinding tool is provided, the process including a step of mixing one or more types of polyol component selected from the group consisting of polyether polyols and polyester polyols with inorganic abrasive grains, a step of mixing an organic polyisocyanate component with inorganic abrasive grains, a step of uniformly mixing the polyol component mixed with the abrasive grains and the polyisocyanate component mixed with the abrasive grains by means of a rotary-static mixer, and a step of molding the mixture thus obtained by reacting the mixture in a mold.

Abstract: An optical film characterized by a high degree of flatness that can be used as a phase difference film of a liquid crystal display, and a method for manufacturing this optical film according to melt-casting film forming method. A melt including a cellulose resin is extruded onto a rotary support member 5 (cooling roll) from a flow casting die 4. A rotary pinch member 6 (touch roll) is energized to the rotary support member 5, and a nip is formed between them. When the melt is sandwiched and pressed by the nip, a die line and irregularity in thickness are removed. The linear pressure of the rotary pinch member 6 and the temperature of the melt immediately before the melt is sandwiched and pressed by the nip are set within a predetermined range, whereby effective correction of the film flatness is achieved.