Patents by Inventor Kenichi Kikushima

Kenichi Kikushima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Short channel CMOS device capable of high performance at low voltage
    Patent number: 5329138
    Abstract: Herein disclosed is a CMOSFET, in which an n-channel MISFET Qn has a gate electrode 11n made of n-type polycrystalline silicon, in which a p-channel MISFET Qp has a gate electrode 11p made of p-type polycrystalline silicon, In which the n-channel MISFET Qn and the p-channel MISFET Qp have their respective channel regions formed with heavily doped impurity layers 12p and 12n having the conductivity types identical to those of their wells 3 and 2, and in which the individual heavily doped impurity layers 12p and 12n have their respective surfaces formed with counter-doped layers 13n and 13p having the opposite conductivity types.
    Type: Grant
    Filed: July 29, 1992
    Date of Patent: July 12, 1994
    Assignee: Hitachi, Ltd.
    Inventors: Shinichiroo Mitani, Kenichi Kikushima, Fumio Ootsuka