Abstract: A first bond portion is formed on a first electrode, and for a wire extended from the first bond portion, a tip of a capillary is pressed against a bump formed on a second electrode, to form a second bond portion to which a shape of a pressing surface at the tip of the capillary is transferred. A base end of the second bond portion from which the wire starts becoming thinner is located on the inside of the bump from an end of a bonding surface by 10% or more of the length of the bonding surface, and the wire is cut with the capillary.

Abstract: Light from a semiconductor light-emitting element travels in all directions. Thus, light that travels in the directions other than a lighting direction cannot be used effectively. Means for forming a semiconductor light-emitting element having tilted side surfaces, and forming a reflective layer on the tilted side surfaces has been proposed. However, since the tilted surfaces are formed by an etching method or the like, it takes a long time to form the tilted surfaces, and it is difficult to control the tilted surfaces. As a solution to these problems, semiconductor light-emitting elements are placed on a submount substrate and sealed with a sealant, and then a groove is formed in a portion between adjoining ones of the semiconductor light-emitting elements. The grooves formed are filled with a reflective material, and a light-emitting surface is polished. Then, the submount substrate is divided into individual semiconductor light-emitting devices.

Abstract: A light emitting device 10 includes a light emitting element 11, a package 13 in which the light emitting element 11 is accommodated, and a sealing member 14 configured to seal the light emitting element 11. The package 13 includes a base 13B configured to hold the light emitting element 11 and a frame part 13A vertically standing on the base 13B so as to surround the light emitting element 11. The sealing member 14 is embedded in a region surrounded by the frame part 13A. The frame part 13A includes a protruding wall 15 upwardly protruding from an upper end surface 132a of the frame part 13A and provided so as to surround the light emitting element 11.

Abstract: To provide a light emitting device which emits high-luminance, uniform white light with reduced variations in luminance, a light emitting element 101 is mounted on a substrate 105 and covered with a wavelength conversion layer 106 of uniform thickness, and then a light scattering layer 107 made of a translucent resin containing a light reflecting material is formed. As the light scattering layer 107, a high density region 109 in which a density of the light reflecting material is high is formed immediately above a central part of a light emitting surface of the light emitting element 101, and a low density region 110 in which the density of the light reflecting material is low is formed around a region immediately above the central part of the light emitting surface of the light emitting element. A translucent resin layer 108 is formed on the light scattering layer 107.

Abstract: In a light-emitting device including a base body portion which is configured by integrally forming a reflection case and a terminal holding portion provided at the rear portion of the reflection case and lead members to be inserted into the base body portion, portions of the lead members extracted outside of the base body portion are bent along the terminal holding portion to form a pair of connection portions to be connected to the pattern of a wiring board, respectively, a plurality of radiation plates are provided at the lead member. The plurality of the radiation plates are extracted from the same surface (lower surface) of the base body portion. Since the plurality of radiation plates are provided, at the time of being the radiation plates, the base body portion is prevented from being applied with an excessive force and the damage of the base body portion can be prevented.

Abstract: A semiconductor light emitting device includes a mount member and a semiconductor light emitting element arranged on the mount member. The mount member includes a substrate; an electrode assembly (a positive electrode, a negative electrode, and bumps) that are arranged on a top surface of a substrate and contacts the semiconductor light emitting element. A reflecting member is out of contact with the semiconductor light emitting element and the electrode assembly. According to this structure, a semiconductor light emitting device can be provided, which efficiently outputs output light using a material having a high reflectance regardless of whether the material is appropriate for an electrode.

Abstract: Light from a semiconductor light-emitting element travels in all directions. Thus, light that travels in the directions other than a lighting direction cannot be used effectively. Means for forming a semiconductor light-emitting element having tilted side surfaces, and forming a reflective layer on the tilted side surfaces has been proposed. However, since the tilted surfaces are formed by an etching method or the like, it takes a long time to form the tilted surfaces, and it is difficult to control the tilted surfaces. As a solution to these problems, semiconductor light-emitting elements are placed on a submount substrate and sealed with a sealant, and then a groove is formed in a portion between adjoining ones of the semiconductor light-emitting elements. The grooves formed are filled with a reflective material, and a light-emitting surface is polished. Then, the submount substrate is divided into individual semiconductor light-emitting devices.

Abstract: In a light-emitting device including a base body portion which is configured by integrally forming a reflection case and a terminal holding portion provided at the rear portion of the reflection case and lead members to be inserted into the base body portion, portions of the lead members extracted outside of the base body portion are bent along the terminal holding portion to form a pair of connection portions to be connected to the pattern of a wiring board, respectively, a plurality of radiation plates are provided at the lead member. The plurality of the radiation plates are extracted from the same surface (lower surface) of the base body portion. Since the plurality of radiation plates are provided, at the time of being the radiation plates, the base body portion is prevented from being applied with an excessive force and the damage of the base body portion can be prevented.

Abstract: A semiconductor light emitting device 100 comprises: a mount member 130 and a semiconductor light emitting element 110 arranged on the mount member 130, the mount member 130 including: a substrate 131; an electrode assembly (a positive electrode 134, a negative electrode 135, and bumps 140 to 144) that is arranged on a top surface of the substrate 131 and contacts the semiconductor light emitting element 110; and a reflecting member 132 that is out of contact with the semiconductor light emitting element 110 and the electrode assembly. According to this structure, a semiconductor light emitting device can be provided, which efficiently outputs output light using a material having a high reflectance regardless of whether the material is appropriate for an electrode.

Abstract: In a light emitting diode, a scattering material-containing light guiding/scattering layer is provided which directly receives light emitted from a light emitting element. The scattering material contained in the light guiding/scattering layer irregularly reflects and scatters the incident light. The scattered light is led to a fluorescence emitting layer formed of a transparent binder containing a phosphor material. The probability of incidence of light having high optical density, which has been emitted from the light emitting element, directly to the phosphor material contained in the fluorescence emitting layer is lowered, and light can be radiated from the whole fluorescence emitting layer. Therefore, uniform light having a desired color can be radiated with high efficiency from the light emitting diode.

Abstract: In a light emitting diode, a scattering material-containing light guiding/scattering layer is provided which directly receives light emitted from a light emitting element. The scattering material contained in the light guiding/scattering layer irregularly reflects and scatters the incident light. The scattered light is led to a fluorescence emitting layer formed of a transparent binder containing a phosphor material. The probability of incidence of light having high optical density, which has been emitted from the light emitting element, directly to the phosphor material contained in the fluorescence emitting layer is lowered, and light can be radiated from the whole fluorescence emitting layer. Therefore, uniform light having a desired color can be radiated with high efficiency from the light emitting diode.

Abstract: A GaN-based LED element 1 having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element 2 formed in a silicon substrate. Electrical connections are provided via Au microbumps 11 and 12 between a p-side electrode 5 of the GaN-based LED element 1 and an n-side electrode 8 of the Si diode element 2 and between an n-side electrode 6 of the GaN-based LED element 1 and a p-side electrode 7 of the Si diode element 2. The Si diode element 2 functions to protect the LED element 1 from an electrostatic destruction. The Si diode element 2 has a backside electrode 9 connected to a leadframe 13a. The p-side electrode 7 of the Si diode element 2 has a bonding pad portion 10 connected to a leadframe 13b via an Au wire 17.

Abstract: A GaN-based LED element 1 having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element 2 formed in a silicon substrate. Electrical connections are provided via Au microbumps 11 and 12 between a p-side electrode 5 of the GaN-based LED element 1 and an n-side electrode 8 of the Si diode element 2 and between an n-side electrode 6 of the GaN-based LED element 1 and a p-side electrode 7 of the Si diode element 2. The Si diode element 2 functions to protect the LED element 1 from an electrostatic destruction. The Si diode element 2 has a backside electrode 9 connected to a leadframe 13a. The p-side electrode 7 of the Si diode element 2 has a bonding pad portion 10 connected to a leadframe 13b via an Au wire 17.

Abstract: A GaN-based LED element 1 having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element 2 formed in a silicon substrate. Electrical connections are provided via Au microbumps 11 and 12 between a p-side electrode 5 of the GaN-based LED element 1 and an n-side electrode 8 of the Si diode element 2 and between an n-side electrode 6 of the GaN-based LED element 1 and a p-side electrode 7 of the Si diode element 2. The Si diode element 2 functions to protect the LED element 1 from an electrostatic destruction. The Si diode element 2 has a backside electrode 9 connected to a leadframe 13a. The p-side electrode 7 of the Si diode element 2 has a bonding pad portion 10 connected to a leadframe 13b via an Au wire 17.

Abstract: A GaN-based LED element 1 having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element 2 formed in a silicon substrate. Electrical connections are provided via Au microbumps 11 and 12 between a p-side electrode 5 of the GaN-based LED element 1 and an n-side electrode 8 of the Si diode element 2 and between an n-side electrode 6 of the GaN-based LED element 1 and a p-side electrode 7 of the Si diode element 2. The Si diode element 2 functions to protect the LED element 1 from an electrostatic destruction. The Si diode element 2 has a backside electrode 9 connected to a leadframe 13a. The p-side electrode 7 of the Si diode element 2 has a bonding pad portion 10 connected to a leadframe 13b via an Au wire 17.

Abstract: A GaN-based LED element 1 having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element 2 formed in a silicon substrate. Electrical connections are provided via Au microbumps 11 and 12 between a p-side electrode 5 of the GaN-based LED element 1 and an n-side electrode 8 of the Si diode element 2 and between an n-side electrode 6 of the GaN-based LED element 1 and a p-side electrode 7 of the Si diode element 2. The Si diode element 2 functions to protect the LED element 1 from an electrostatic destruction. The Si diode element 2 has a backside electrode 9 connected to a leadframe 13a. The p-side electrode 7 of the Si diode element 2 has a bonding pad portion 10 connected to a leadframe 13b via an Au wire 17.