Abstract: A method for reducing the leakage current in DRAM MIM capacitors comprises forming a multi-layer dielectric stack from an amorphous highly doped material, an amorphous high band gap material, and a lightly-doped or non-doped material. The highly doped material will remain amorphous (<30% crystalline) after an anneal step. The high band gap material will remain amorphous (<30% crystalline) after an anneal step. The lightly-doped or non-doped material will become crystalline (?30% crystalline) after an anneal step. The high band gap material is formed between the amorphous highly doped material and the lightly or non-doped material and provides an intermediate barrier to conduction through the multi-layer dielectric stack.

Abstract: A method for reducing the leakage current in DRAM MIM capacitors comprises forming a multi-layer dielectric stack from an amorphous highly doped material, an amorphous high band gap material, and a lightly-doped or non-doped material. The highly doped material will remain amorphous (<30% crystalline) after an anneal step. The high band gap material will remain amorphous (<30% crystalline) after an anneal step. The lightly-doped or non-doped material will become crystalline (?30% crystalline) after an anneal step. The high band gap material is formed between the amorphous highly doped material and the lightly or non-doped material and provides an intermediate barrier to conduction through the multi-layer dielectric stack.

Abstract: A robot system according to an aspect of embodiments includes an information acquisition unit, a plurality of robots, and an information providing unit. The information acquisition unit acquires information related to articles conveyed on a conveyance path. The plurality of robots transfers the articles from the conveyance path. The information providing unit provides information related to transfer target articles to a robot that transfers articles on the immediately downstream side of an acquisition position of the information on the conveyance path, and for a robot that transfers articles on the downstream side of the aforementioned robot, the information providing unit provides information related to articles that are not transferred by a robot on the immediately upstream side of the robot.

Abstract: A robot system according to an aspect of an embodiment includes a plurality of robots, an information acquisition unit, and a distribution unit. The robots transfer the articles from the carry-in path into which the articles are successively carried, to the predetermined region of the carry-out path through which the articles are successively carried out. The information acquisition unit acquires information about the predetermined region. The distribution unit distributes the articles in the carry-in path as transfer targets to the robots based on the information acquired by the information acquisition unit.

Abstract: A robot system according to an aspect of embodiments includes an information acquisition unit, a plurality of robots, and a distribution unit. The information acquisition unit acquires information indicating a two-dimensional position on a surface of a conveyance path of an article conveyed on the conveyance path. The plurality of robots transfers the article from the conveyance path. The distribution unit distributes the articles on the surface of the conveyance path to the plurality of robots as transfer targets on the basis of the information acquired by the information acquisition unit.

Abstract: A picking system includes a conveyer, a robot, a main camera, and a control device. The conveyer conveys workpieces. The robot performs a holding operation and a moving operation on the workpieces. The main camera captures the transport path of the conveyer. The control device detects the workpiece on the basis of the image captured by the main camera and instructs the robot to perform the holding operation on the detected workpiece. Moreover, the control device instructs the robot to perform the holding operation on the overlapped workpieces when the overlapping of the workpieces is detected.

Abstract: A picking system includes a conveyer, a robot, and a control device. The conveyer conveys workpieces. The robot includes a plurality of holding parts and a supporting part. The holding parts hold the workpieces. The supporting part is rotatably provided against an arm to support the plurality of holding parts. Then, the control device instructs the robot to rotate the supporting part by a predetermined amount in such a manner that the direction of the workpiece becomes a predetermined direction for each the workpiece held by the holding parts and then to place the workpiece on a predetermined place.

Abstract: A robot system according to embodiments includes a conveying device, a plurality of robots, an image capturing device, a workpiece detecting device, and a control device. The control device includes an operation instruction unit and an allocating unit. The operation instruction unit generates an operation instruction for performing a holding operation on workpieces on the basis of the detection result of the workpiece detecting device and transmits the operation instruction to the robots. The allocating unit determines which of the plurality of robots to which the operation instruction unit transmits the operation instruction on the basis of conveying situations of the workpieces obtained from the detection result of the workpiece detecting device.

Abstract: A method for reducing the leakage current in DRAM MIM capacitors comprises forming a multi-layer dielectric stack from an amorphous highly doped material, an amorphous high band gap material, and a lightly or non-doped material. The highly doped material will remain amorphous (<30% crystalline) after an anneal step. The high band gap material will remain amorphous (<30% crystalline) after an anneal step. The lightly or non-doped material will become crystalline (?30% crystalline) after an anneal step. The high band gap material is formed between the amorphous highly doped material and the lightly or non-doped material and provides an intermediate barrier to conduction through the multi-layer dielectric stack.

Abstract: To provide a semiconductor device including a capacitor which includes a cylindrical or columnar lower electrode, a support film in contact with the upper portion of the lower electrode for supporting the lower electrode, a dielectric film covering the lower electrode and the support film, and an upper electrode facing the lower electrode with the dielectric film interposed therebetween, wherein the dielectric film has a first thickness on the upper surface of the support film and a second thickness thinner than the first thickness on the side surface of the lower electrode, and thereby the mechanical strength of the support film is increased.

Abstract: A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value.

Abstract: A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value.

Abstract: A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value.

Abstract: A method for reducing the leakage current in DRAM MIM capacitors comprises forming a multi-layer dielectric stack from an amorphous highly doped material, an amorphous high band gap material, and a lightly or non-doped material. The highly doped material will remain amorphous (<30% crystalline) after an anneal step. The high band gap material will remain amorphous (<30% crystalline) after an anneal step. The lightly or non-doped material will become crystalline (?30% crystalline) after an anneal step. The high band gap material is formed between the amorphous highly doped material and the lightly or non-doped material and provides an intermediate barrier to conduction through the multi-layer dielectric stack.

Abstract: A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value.

Abstract: A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value.

Abstract: This painting system includes a body transport device transporting a body, a painting robot fixedly set at a first height, painting at least an inner portion of a door of the body while changing a posture to follow transport of the body by the body transport device, and a door opening/closing robot fixedly set at a second height different from the first height.

Abstract: A picking system includes a conveyer, a robot, and a control device. The conveyer conveys workpieces. The robot includes a plurality of holding parts and a supporting part. The holding parts hold the workpieces. The supporting part is rotatably provided against an arm to support the plurality of holding parts. Then, the control device instructs the robot to rotate the supporting part by a predetermined amount in such a manner that the direction of the workpiece becomes a predetermined direction for each the workpiece held by the holding parts and then to place the workpiece on a predetermined place.

Abstract: A robot system according to embodiments includes a conveying device, a plurality of robots, an image capturing device, a workpiece detecting device, and a control device. The control device includes an operation instruction unit and an allocating unit. The operation instruction unit generates an operation instruction for performing a holding operation on workpieces on the basis of the detection result of the workpiece detecting device and transmits the operation instruction to the robots. The allocating unit determines which of the plurality of robots to which the operation instruction unit transmits the operation instruction on the basis of conveying situations of the workpieces obtained from the detection result of the workpiece detecting device.

Abstract: A picking system includes a conveyer, a robot, a main camera, and a control device. The conveyer conveys workpieces. The robot performs a holding operation and a moving operation on the workpieces. The main camera captures the transport path of the conveyer. The control device detects the workpiece on the basis of the image captured by the main camera and instructs the robot to perform the holding operation on the detected workpiece. Moreover, the control device instructs the robot to perform the holding operation on the overlapped workpieces when the overlapping of the workpieces is detected.