Patents by Inventor Kenichi Kunimitsu

Kenichi Kunimitsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Information recording device, information recording method, and recording medium region management method
    Publication number: 20060146431
    Abstract: An information recording apparatus of the present invention writes input data on a recording medium by the predetermined data amount, and each time the writing of data of the predetermined data amount is completed, reads the data from the area on the recording medium on which the data is written just before and measures a time required for the reading (S15), and compares the measured read time with a predetermined limit time (S16). If the measured time exceeds the limit time, the area on the recording medium from which the reading is performed is determined to be a defective area (S17). Subsequently the area determined to be defective is replaced with another normal area on the recording medium. In this way, an area with a long read time is replaced with another area where reading can be performed normally, thereby the real-time property is ensured in the reproducing operation.
    Type: Application
    Filed: January 29, 2004
    Publication date: July 6, 2006
    Inventors: Masaharu Tsujimura, Tohru Hori, Kenichi Kunimitsu
  • Method for fabricating a semi-conductor device having a tungsten film-filled via hole
    Patent number: 6746962
    Abstract: A first metal film is deposited on a bottom and a wall of a recess formed in an insulating film on a semiconductor substrate. A second metal film is filled in the recess on the first metal film. The second metal film is formed from a polycrystalline tungsten film having a crystal plane of a (110) orientation.
    Type: Grant
    Filed: October 18, 2001
    Date of Patent: June 8, 2004
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Takenobu Kishida, Takeshi Harada, Toru Hinomura, Hiromitsu Abe, Mitsunari Satake, Kenichi Kunimitsu
  • Semiconductor device and method for fabricating the same
    Publication number: 20020050648
    Abstract: A first metal film is deposited on a bottom and a wall of a recess formed in an insulating film on a semiconductor substrate. A second metal film is filled in the recess on the first metal film. The second metal film is formed from a polycrystalline tungsten film having a crystal plane of a (110) orientation.
    Type: Application
    Filed: October 18, 2001
    Publication date: May 2, 2002
    Inventors: Takenobu Kishida, Takeshi Harada, Toru Hinomura, Hiromitsu Abe, Mitsunari Satake, Kenichi Kunimitsu