Abstract: Provided is a resin film that has a stress integral value of greater than 10 MPa and 1000 MPa or less when uniaxially stretched at a tensile speed of 300 mm/min at 25° C. until it breaks. The resin film showing these properties is supple and durable.

Abstract: A method for manufacturing a device including an active layer and a support substrate bonded to the active layer on one surface side, the active layer including an element, an electrode configured to drive the element, a frame portion disposed around the element, and an electrode pad disposed in the frame portion and coupled to the electrode, the method including: forming a protective film at the other surface side of the frame portion and the other surface side of the element, the protective film being resistant to an etchant and including a first opening portion formed between an outer shape of the element and the frame portion and a second opening portion formed on the electrode pad; and forming a space between the element and the support substrate by etching the support substrate with the etchant passing through the first opening portion.

Abstract: A vibration element includes: a base; a first arm continuous with the base; a second arm that is continuous with the base and is adjacent to the first arm; a first electrode disposed on the first arm, the second arm, and the base; a first piezoelectric layer that has a first polarity and that is disposed on the first electrode on the first arm; a second piezoelectric layer that has a second polarity different from the first polarity and that is disposed on the first electrode on the second arm; an insulating layer disposed on the first electrode on the base; and a second electrode disposed on the first piezoelectric layer, the second piezoelectric layer, and the insulating layer.

Abstract: A method for manufacturing a vibrator device including a base portion having a first surface, a support portion protruding from the first surface in a normal direction of the first surface, and a vibrating arm that extends from the support portion along the first surface and that has a gap with the first surface, the method including: preparing a single crystal silicon substrate having a flat plate shape; forming, by dry etching, at least two bottomed long grooves arranged at a predetermined interval on a second surface which is one surface of the silicon substrate; and forming the vibrating arm between the second surface and a bottom surface of the long groove in a thickness direction of the silicon substrate by wet etching side surfaces of the long groove and communicating the two long grooves with each other.

Abstract: A vibrator element includes: a base; an arm that is made of silicon and continuous with the base; a silicon dioxide layer arranged on the arm and a continuous portion in which the arm and the base are continuous; a zirconium dioxide layer arranged on the silicon dioxide layer at least in the continuous portion; a first electrode arranged on the zirconium dioxide layer; a piezoelectric layer arranged on the first electrode; and a second electrode arranged on the piezoelectric layer.

Abstract: A vibration element includes: a base; an arm continuous with the base; a first electrode that includes a first layer of titanium nitride and a second layer containing nitrogen, titanium, and oxygen, and is disposed on the arm; an aluminum nitride layer in contact with the second layer; and a second electrode disposed on the aluminum nitride layer.

Abstract: A vibration element includes: a base; an arm continuous with the base; a first electrode that includes a first layer of titanium nitride and a second layer containing nitrogen, titanium, and oxygen, and is disposed on the arm; an aluminum nitride layer in contact with the second layer; and a second electrode disposed on the aluminum nitride layer.

Abstract: A vibration element includes: a base; a first arm continuous with the base; a second arm that is continuous with the base and is adjacent to the first arm; a first electrode disposed on the first arm, the second arm, and the base; a first piezoelectric layer that has a first polarity and that is disposed on the first electrode on the first arm; a second piezoelectric layer that has a second polarity different from the first polarity and that is disposed on the first electrode on the second arm; an insulating layer disposed on the first electrode on the base; and a second electrode disposed on the first piezoelectric layer, the second piezoelectric layer, and the insulating layer.

Abstract: A piezoelectric device includes a base, a vibration film, and a piezoelectric element. The base of the piezoelectric device has at least one opening. The opening is closed by the vibration film. The piezoelectric element is located on the vibration film. The vibration film includes a first layer that is has lower water permeability than silicon oxide and a second layer that is in close contact with the first layer and that has a larger toughness value than the first layer.

Abstract: Provided is a liquid ejecting head including a piezoelectric element which includes a piezoelectric layer and electrodes provided on the piezoelectric layer on an upper portion of a zirconium oxide layer, in which the zirconium oxide layer is formed of granular crystal grains.

Abstract: A piezoelectric device includes a base, a vibration film, and a piezoelectric element. The base of the piezoelectric device has at least one opening. The opening is closed by the vibration film. The piezoelectric element is located on the vibration film. The vibration film includes a first layer that is has lower water permeability than silicon oxide and a second layer that is in close contact with the first layer and that has a larger toughness value than the first layer.

Abstract: A detecting element has an absorbing section where a temperature rises according to an amount of electromagnetic waves which are absorbed and a detecting section where characteristics change according to an amount of heat which is transmitted from the absorbing section. A method for manufacturing the detecting element includes: forming the detecting section on a substrate; forming a protective film which covers the detecting section; forming a hollow space portion in a region which overlaps with the detecting section of the substrate in a planar view after the forming of the protective film; and forming the absorbing section by applying a liquid body, which contains a material constituting the absorbing section, in a region on the protective film on an opposite side from the detection section, which overlaps with the detecting section in a planar view, and solidifying the liquid body after the forming of the hollow space portion.

Abstract: A detecting element has an absorbing section where a temperature rises according to an amount of electromagnetic waves which are absorbed and a detecting section where characteristics change according to an amount of heat which is transmitted from the absorbing section. A method for manufacturing the detecting element includes: forming the detecting section on a substrate; forming a protective film which covers the detecting section; forming a hollow space portion in a region which overlaps with the detecting section of the substrate in a planar view after the forming of the protective film; and forming the absorbing section by applying a liquid body, which contains a material constituting the absorbing section, in a region on the protective film on an opposite side from the detection section, which overlaps with the detecting section in a planar view, and solidifying the liquid body after the forming of the hollow space portion.

Abstract: Provided is a liquid ejecting head including a piezoelectric element which includes a piezoelectric layer and electrodes provided on the piezoelectric layer on an upper portion of a zirconium oxide layer, in which the zirconium oxide layer is formed of granular crystal grains.

Abstract: A method for manufacturing a ferroelectric memory includes the steps of: preparing a sol-gel solution; removing solvent from the sol-gel solution to obtain powder; dividing the powder into at least first powder and second powder; obtaining solution with the first powder; coating the solution on a first conductive film; and applying heat treatment to the solution on the first conductive film to form a ferroelectric film.

Abstract: A metal thin film provided on a substrate and having a metal with a face-centered cubic crystal structure, wherein the metal thin film is preferentially oriented in a (111) plane, and a (100) plane which is not parallel to a surface of the substrate is present on a surface of the thin film. In this metal thin film, the metal with a face-centered cubic crystal structure includes at least one element selected from the group consisting of Pt, Ir, and Ru.

Abstract: A metal thin film provided on a substrate and having a metal with a face-centered cubic crystal structure, wherein the metal thin film is preferentially oriented in a (111) plane, and a (100) plane which is not parallel to a surface of the substrate is present on a surface of the thin film. In this metal thin film, the metal with a face-centered cubic crystal structure includes at least one element selected from the group consisting of Pt, Ir, and Ru.

Abstract: A ferroelectric thin film comprising at least two stock solutions is made so that the stock solutions are mixed homogeneously in the plane and over the thickness on a substrate, or so that the stock solutions are mixed having a distribution in the plane and over the thickness on the substrate. A ferroelectric thin film mixed homogeneously in the plane is made by discharging two stock solutions 105 and 106 separately at a fixed discharging rate by separate inkjet heads using an inkjet apparatus having at least two inkjet heads, and a ferroelectric thin film mixed homogeneously over the thickness is made by repeating this process. Moreover, a ferroelectric thin film having a distribution of the stock solutions is made by changing the discharging rate in the thickness direction or the in-plane direction.

Abstract: In a stuff-synchronized time division multiplex (TDM) transmission system, an incoming TDM signal is delayed so that a plurality of TDM frame sequences are successively delayed by one time slot and appear at the inputs of a data selector. A control circuit is provided for deriving a channel-by-channel selection signal from stuff specification bits contained in the incoming TDM signal. The data selector is responsive to the selection signal to select a channel in one of the TDM frame sequences and delivers the selected channel as a TDM output signal to a time division switch, or cross-connect in which it is decomposed into channels for switching to a desired route.