Abstract: A light receiving element includes a substrate having a first main surface, and includes a light receiving layer provided on the first main surface. The light receiving layer includes a first semiconductor layer and a second semiconductor layer provided on the first semiconductor layer. The light receiving element includes a contact layer provided on the light receiving layer, and includes a groove that separates the contact layer for each pixel. The first semiconductor layer includes a type-II quantum-well layer including an InGaAs layer and a GaAsSb layer. The second semiconductor layer includes a AlxGayIn1-x-yAs layer, where 0?x<1, 0?y<1, and 0<x+y<1. The bottom surface of the groove is situated between a top surface and a bottom surface of the second semiconductor layer, and the light receiving layer includes an n-type region below an exposed portion of a bottom surface of the groove.

Abstract: A light detection device includes a photo detector and a circuit board connected to the photo detector by conductive connection parts. In this light detection device, the photo detector includes a substrate, a semiconductor layer provided on one surface of the substrate, a first groove dividing the semiconductor layer into sections for respective pixels, and first electrodes provided on the semiconductor layer and serving as the pixels. Each of the conductive connection part contains indium. Each of the first electrode includes a Ti layer and a Pt layer stacked in this order on the semiconductor layer, and the conductive connection parts are provided on the Pt layers of the first electrodes.

Abstract: A light detection device includes a photo detector and a circuit board connected to the photo detector by conductive connection parts. In this light detection device, the photo detector includes a substrate, a semiconductor layer provided on one surface of the substrate, a first groove dividing the semiconductor layer into sections for respective pixels, and first electrodes provided on the semiconductor layer and serving as the pixels. Each of the conductive connection part contains indium. Each of the first electrode includes a Ti layer and a Pt layer stacked in this order on the semiconductor layer, and the conductive connection parts are provided on the Pt layers of the first electrodes.

Abstract: An infrared-ray sensing device includes a support and a plurality of photodiodes disposed on the support. Each photodiode of the plurality includes a first mesa including a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type that is disposed between the first and second semiconductor layers, and a super-lattice region disposed on the support along a reference plane. The third semiconductor layer and the super-lattice region are provided in common for the photodiodes of the plurality. In the photodiodes, the first mesas and the second semiconductor layers are aligned along a first axis intersecting the reference plane so that each of the second semiconductor layers is provided in a position corresponding to the position of its first mesa. Each second semiconductor layer is disposed between the third semiconductor layer and the super-lattice region.

Abstract: An infrared-ray sensing device includes a support and a plurality of photodiodes disposed on the support. Each of the plurality of photodiodes includes a first mesa including a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type that is disposed between the first and second semiconductor layers, and a super-lattice region disposed on the support along a reference plane. Each of the third semiconductor layer and the super-lattice region is provided in common for the photodiodes. The first mesas and the second semiconductor layers are aligned along a first axis intersecting the reference plane so that each of the second semiconductor layers is provided in a position corresponding to the position of first mesa. The second semiconductor layer is disposed between the third semiconductor layer and the super-lattice region.