Abstract: A switch circuit includes: a first input and output terminal; a first inductor connected with the first input and output terminal; a capacitor connected with the first inductor; a second input and output terminal connected with the capacitor; a first MEMS switch connected with one end of the capacitor; a second MEMS switch connected with the other end of the capacitor; and a second inductor connected between the first MEMS switch and the second MEMS switch, and satisfies a relationship of f=1/(2??CL1)=1/(2??CL2), where L1 is an inductance of the first inductor, L2 is an inductance of the second inductor, C is a capacitance of the capacitor, and f is a use frequency.

Abstract: A phase-shifting circuit includes: a first parallel circuit which is connected across input and output terminals of a high frequency signal, composed of a first inductor and a first switching element that exhibits a through state in an ON state and a capacitive property in an OFF state, and produces parallel resonance at a prescribed frequency when the first switching element is in the OFF state; a series circuit composed of a second inductor and a third inductor and connected in parallel with the first parallel circuit; a capacitor having its first terminal connected to a point of connection of the second and third inductors; and a second parallel circuit which is connected across a second terminal of the capacitor and a ground, composed of a fourth inductor and a second switching element that exhibits a through state in an ON state and a capacitive property in an OFF state, and produces parallel resonance at a prescribed frequency when the second switching element is in the OFF state.

Abstract: Provided is a small-size phase shift circuit having a broad band characteristic. The phase shift circuit includes: a first switching element for switching between a through path and a capacitance capacity; a second switching element for switching the capacitance capacity for the through path and the ground; and a first and a second inductor having inductance. One end of the first switching element is connected to one end of the second switching element by the first inductor while the other ends of the first and the second switching element are connected to each other by the second inductor. One end of the first switching element is connected to a high-frequency signal input terminal while the other end of the first switching element is connected to a high-frequency signal output terminal. Thus, it is possible to constitute a phase device satisfying a predetermined condition.

Abstract: A switch circuit including: a plurality of MEMS switches connected in parallel or in series, which have different drive voltages; and a single voltage supply for driving the plurality of MEMS switches by the plurality of drive voltages, is used for a microwave circuit or an antenna circuit, to vary a configuration of the microwave circuit or the antenna circuit based on the drive voltage value. That is, the configuration of the microwave circuit or the antenna circuit can be varied based on the drive voltage value by using the switch circuit including the MEMS switches having the different drive voltages for the microwave circuit or the antenna circuit.

Abstract: A switch circuit includes: a first input and output terminal; a first inductor connected with the first input and output terminal; a capacitor connected with the first inductor; a second input and output terminal connected with the capacitor; a first MEMS switch connected with one end of the capacitor; a second MEMS switch connected with the other end of the capacitor; and a second inductor connected between the first MEMS switch and the second MEMS switch, and satisfies a relationship of f=1/(2??CL1)=1/(2??CL2), where L1 is an inductance of the first inductor, L2 is an inductance of the second inductor, C is a capacitance of the capacitor, and f is a use frequency.

Abstract: A phase-shifting circuit includes: a first parallel circuit which is connected across input and output terminals of a high frequency signal, composed of a first inductor and a first switching element that exhibits a through state in an ON state and a capacitive property in an OFF state, and produces parallel resonance at a prescribed frequency when the first switching element is in the OFF state; a series circuit composed of a second inductor and a third inductor and connected in parallel with the first parallel circuit; a capacitor having its first terminal connected to a point of connection of the second and third inductors; and a second parallel circuit which is connected across a second terminal of the capacitor and a ground, composed of a fourth inductor and a second switching element that exhibits a through state in an ON state and a capacitive property in an OFF state, and produces parallel resonance at a prescribed frequency when the second switching element is in the OFF state.

Abstract: In a signal processing apparatus for transmitting or processing a signal, a substrate has a recessed portion in a surface of the substrate, a first interconnecting conductor is on the substrate, including at least the recessed portion of the substrate, and a dielectric support film is on the substrate opposite the recessed portion of the substrate with an air space between the dielectric support film and the substrate. A second interconnecting conductor is on a part of a surface of the dielectric support film. The apparatus has a simple structure and reduced transmission loss and can be made in a simple manufacturing process.

Abstract: Provided is a small-size phase shift circuit having a broad band characteristic. The phase shift circuit includes: a first switching element for switching between a through path and a capacitance capacity; a second switching element for switching the capacitance capacity for the through path and the ground; and a first and a second inductor having inductance. One end of the first switching element is connected to one end of the second switching element by the first inductor while the other ends of the first and the second switching element are connected to each other by the second inductor. One end of the first switching element is connected to a high-frequency signal input terminal while the other end of the first switching element is connected to a high-frequency signal output terminal. Thus, it is possible to constitute a phase device satisfying a predetermined condition.

Abstract: A phase shift circuit and a phase shifter are achieved which are small in size and wide in bandwidth. The phase shift circuit includes a capacitor, and a series circuit composed of a switching element which exhibits capacitivity when it is in an off-state and an inductor connected in series with this switching element, the series circuit being connected in parallel with the capacitor. The capacitor and one terminal of the series circuit are connected with a high frequency signal input/output terminal, and the other terminal thereof is connected with ground.

Abstract: A phase shifter includes an FET 2a having its drain electrode connected to an input/output terminal 1a; and FET 2b having its drain electrode connected to the source electrode of the FET 2a and its source electrode connected to an input/output terminal 1b; and FET 2c having its drain electrode connected to the source electrode of the FET 2a; and an inductor 3a having its first terminal connected to the source electrode of the FET 2c and its second terminal connected to a ground. It can reduce the insertion loss by narrowing the gate width of the FET 2a, and carries out the phase shift of a high-frequency signal with suppressing the reflection.

Abstract: In a signal processing apparatus for transmitting or processing a signal, a substrate has a recessed portion in a surface of the substrate, a first interconnecting conductor is on the substrate, including at least the recessed portion of the substrate, and a dielectric support film is on the substrate opposite the recessed portion of the substrate with an air space sand between the dielectric support film and the substrate. A second interconnecting conductor is on a part of a surface of the dielectric support film. The apparatus has a simple structure and reduced transmission loss and can be made in a simple manufacturing process.

Abstract: In a high frequency apparatus for transmitting or processing a high frequency signal, a substrate has a recessed portion in a surface of the substrate, a first interconnecting conductor is on the substrate, including at least the recessed portion of the substrate, and a dielectric support film is on the substrate opposite the recessed portion of the substrate with an air space between the dielectric support film and the substrate. A second interconnecting conductor is on a part of a surface of the dielectric support film. The high frequency apparatus has a simple structure and reduced transmission loss and can be made in a simple manufacturing process.

Abstract: A phase shifter includes an FET 2a having its drain electrode connected to an input/output terminal 1a; an FET 2b having its drain electrode connected to the source electrode of the FET 2a and its source electrode connected to an input/output terminal 1b; an FET 2c having its drain electrode connected to the source electrode of the FET 2a; and an inductor 3a having its first terminal connected to the source electrode of the FET 2c and its second terminal connected to a ground. It can reduce the insertion loss by narrowing the gate width of the FET 2a, and carries out the phase shift of a high-frequency signal with suppressing the reflection.

Abstract: A phase shift circuit and a phase shifter are achieved which are small in size and wide in bandwidth. The phase shift circuit includes a capacitor, and a series circuit composed of a switching element which exhibits capacitivity when it is in an off-state and an inductor connected in series with this switching element, the series circuit being connected in parallel with the capacitor. The capacitor and one terminal of the series circuit are connected with a high frequency signal input/output terminal, and the other terminal thereof is connected with ground.

Abstract: A miniaturized phase shifter and a multi-bit phase shifter are provided, in which filters are constructed using capacitors at FET pinch-off and pass phase can be shifted by turning the FET on and off, the phase shifter including: a first FET having a drain electrode connected to an input terminal and a source electrode connected to an output terminal; a second FET, in which one of a drain electrode and a source electrode thereof is connected to the source electrode of the first FET and the other is connected to ground via a first inductor; and a third FET, in which one of a drain electrode and a source electrode thereof is connected to the drain electrode of the first FET and the other is connected to ground via a second inductor.

Abstract: In a high frequency apparatus for transmitting or processing a high frequency signal, a substrate having a recessed portion is formed in a surface of the substrate, a first interconnecting conductor is formed on the substrate including at least the recessed portion of the substrate, and a dielectric support film is formed on the substrate above the recessed portion of the substrate with an air space sandwiched between the dielectric support film and the substrate. A second interconnecting conductor is formed on a part of a surface of the dielectric support film. The high frequency apparatus has a simple structure and a reduced transmission loss and capable of being made by a simple manufacturing process.

Abstract: A miniaturized phase shifter and a multi-bit phase shifter are provided, in which filters are constructed using capacitors at FET pinch-off and pass phase can be shifted by turning the FET on and off, the phase shifter including: a first FET having a drain electrode connected to an input terminal and a source electrode connected to an output terminal; a second FET, in which one of a drain electrode and a source electrode thereof is connected to the source electrode of the first FET and the other is connected to ground via a first inductor; and a third FET, in which one of a drain electrode and a source electrode thereof is connected to the drain electrode of the first FET and the other is connected to ground via a second inductor.