Abstract: A switching apparatus includes an identification device for identifying received real-time packets; a measurement device for measuring a reception interval of the real-time packets according to the identification identified by the identification device; and an output device for giving priority to the real-time packets over other types of packets and outputting the real-time packet by priority based on the measurement measured by the measurement device.

Abstract: A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate structure including an n-type GaN compound semiconductor layer and a p-type GaN compound semiconductor layer. An n electrode can be formed on the n-type GaN compound semiconductor layer, and a p electrode can be formed on the p-type GaN compound semiconductor layer. The n electrode preferably includes an Al layer of 1 to 10 nm, in contact with the n-type GaN compound semiconductor layer, and any metal layer of Rh, Ir, Pt, and Pd formed on the Al layer. The p electrode can be made of a 200 nm or less layer of of Pd, Pt, Rh, Pt/Rh, Pt/Ag, Rh/Ag, Pd/Rh, or Pd/Ag, in contact with the p-type GaN compound semiconductor layer. Both electrodes can make ohmic contact with respective n-type/p-type GaN semiconductors without application of active annealing.

Abstract: This invention aims to provide a white light emission diode arranged so that t rays emitted from an exciting element comprising a n-type semiconductor layer and a p-type semiconductor layer are converted by a wavelength converting element to white light which is then irradiated through molded resin. The white light emission diode offers a high color rendering effect desired for liquid crystal back light and minimizes deterioration of the molded resin to improve its light emission life characteristic. The wavelength converting element is provided on one surface of the exciting element and an insulating film is deposited on the other surface with interposition of a p-type ohmic electrode exhibiting a high reflectivity in UV wavelength band. The exciting element has its side surface covered with a n-type ohmic electrode exhibiting a high reflectivity in UV wavelength band.

Abstract: This invention aims to provide a white light emission diode arranged so that t rays emitted from an exciting element comprising a n-type semiconductor layer and a p-type semiconductor layer are converted by a wavelength converting element to white light which is then irradiated through molded resin. The white light emission diode offers a high color rendering effect desired for liquid crystal back light and minimizes deterioration of the molded resin to improve its light emission life characteristic. The wavelength converting element is provided on one surface of the exciting element and an insulating film is deposited on the other surface with interposition of a p-type ohmic electrode exhibiting a high reflectivity in UV wavelength band. The exciting element has its side surface covered with a n-type ohmic electrode exhibiting a high reflectivity in UV wavelength band.

Abstract: An electronic key telephone system comprising multiple key telephone stations 8-1 each connected to a central switch 2 by a single communication line 10-1 and to a central control unit 3, 4, 5 by a single data line 9-1. Each station has a plurality of buttons 150 for specifying a service request and a display 120 of current service status and means for periodically transmitting service requests over the data path. The central control unit periodically receives on the data line service requests from each of the buttons and transmits service status information to the station.