Abstract: According to one embodiment, an image processor has a resolution increase module, a detector, and a controller. The resolution increase module is configured to perform super-resolution processing so as to restore a first video signal to a second video signal having a second resolution higher than the first resolution. The detector is configured to detect at least one of an information amount of the first image signal, a noise amount of the first image signal, and a type of a terminal to which the first video signal is input. The controller is configured to change a degree of a super-resolution processing performed by the resolution increase module based on a detection. result of the detector.

Abstract: There is provided a bearing unit including one raceway ring 2 which is mounted on a vehicle body, the other raceway ring 4 which is disposed to face the one raceway ring 2 and is mounted on a wheel, and a plurality of rolling elements 6, 8 which are built in rollably between an outer ring raceway 2s and an inner ring raceway 4s which are formed continuously on facing surfaces of both the raceway rings 2, 4, respectively, along a circumferential direction, at least either of the raceway rings 2, 4 having a connecting flange 12a or a mounting flange 12a at which the raceway ring is mounted on the vehicle body or the wheel, wherein both the raceway rings 2, 4 are formed entirely through cold forging with no machining given to a surface of the flange 2a, 12a, while a quenching and tempering treatment by electromagnetic induction and grinding are given to at least the outer ring raceway 2s and the outer ring raceway 4s.

Abstract: A solid-state image capturing element according to the present invention is provided, in which one or a plurality of light receiving sections for photoelectrically converting an incident light to generate a signal charge is provided on a surface of a semiconductor area or a surface of a semiconductor substrate and a peripheral circuit with a transistor is provided, where a reflection preventing film provided above the light receiving sections and a gate sidewall film of the transistor are formed with a common nitride film that is formed simultaneously.

Abstract: A liquid crystal display device is provided with a color LCD panel having a plurality of pixels, an LCD driver for driving the respective pixels of the LCD panel based on R, G, and B signals, a backlight for illuminating the LCD panel, a light control section for controlling a brightness of the illumination by the backlight, and a gain control section for controlling gains of the R, G, and B signals by each color in accordance with the brightness of the illumination controlled by the light control section.

Abstract: A method for manufacturing bodies formed from insulated soft magnetic metal powder by forming an insulating film of an inorganic substance on the surface of particles of a soft magnetic metal powder, compacting and molding the powder, then carrying out a heat treatment to provide a body formed from insulated soft magnetic metal powder the method comprising: compacting and molding the powder; then magnetically annealing the powder at a high temperature above the Curie temperature for the soft magnetic metal powder and below the threshold temperature at which the insulating film is destroyed in a non-oxidizing atmosphere, such as a vacuum, inert gas, or the like; and then carrying out a further heat treatment at a temperature of from 400° C. to 700° C. in an oxidizing atmosphere, such as air, or the like.

Abstract: A solid-state image capturing device is provided with a plurality of light receiving elements arranged on a surface section of a semiconductor substrate, a color filter of each color for each of the plurality of light receiving elements, and a plurality of microlenses each for condensing incident light into each of the plurality of light receiving elements, in which the interlayer insulation film is provided directly below the color filter of each color in a state where a passivation and hydrogen sintering process film is removed from the interlayer insulation film.

Abstract: A solid-state image capturing device having a two pixel sharing structure is provided. A reset section for resetting electric potential of the floating diffusion to a predetermined electric potential and a signal amplifying section for amplifying a signal in accordance with voltage of the floating diffusion to read out the signal are separately arranged. An active region of the reset section is configured to function as an active region of the floating diffusion. A wiring extending from the floating diffusion to a control electrode of the signal amplifying section is formed to be a first layer of a metal wiring having a layout of a straight line with a shortest length. Centers of the light receiving sections are oriented to centers of pixels and the centers of the pixels are arranged at regular optical intervals.

Abstract: According to one embodiment, an image processing apparatus includes a reception unit for selectively receiving a signal, a signal processing unit for processing the signal that is output from the reception unit, and outputting the signal to a display unit, and control unit for controlling the signal processing unit, wherein the control unit includes a determination unit for determining whether the display unit is powered on, and the signal processing unit includes correction unit for correcting brightness of an image, which is displayed on the display unit, for a predetermined time from when the determination unit determines that the display unit is powered on.

Abstract: A semiconductor device has a silicon substrate, an n-type well region formed in the silicon substrate, first and second source/drain regions constructed of a p-type diffusion layer formed on the n-type well region, a gate insulator formed in a region located between the first source/drain region and the second source/drain region and a polysilicon formed on the gate insulator. The semiconductor device has oxygen-rich layers for blocking a silicide reaction, which layers are formed in an uppermost portion of the silicon substrate on the side of the polysilicon, and has an oxygen-rich layer for blocking the silicide reaction, which layer is formed in an upper portion of the polysilicon.

Abstract: A processor system includes a plurality of first processors, a temperature sensor, a main memory, and a second processor. The first processors individually process tasks. The temperature sensor measures a temperature of each of the first processors. The main memory stores programs of the tasks processed by the first processors, and a task priority order table containing a relationship between the tasks and task priority numbers. The second processor assigns the tasks to the first processors on the basis of the task priority order table and the temperatures of the first processors measured by the temperature sensor.

Abstract: The present invention provides a thermosetting and photocurable coating composition comprising: (A) at least one compound selected from the group consisting of radical-polymerizable unsaturated monomers, resins containing radical-polymerizable unsaturated groups, and resins containing radical-polymerizable unsaturated groups and thermosetting functional groups; (B) a hydroxyl-containing polyester resin produced by esterifying a polybasic acid (a) and a polyhydric alcohol (b), wherein an alicyclic polybasic acid (a1) and/or an alicyclic polyhydric alcohol (b1) are included in a ratio of 20% or more based on the total weight of polybasic acid (a) and polyhydric alcohol (b); (C) a crosslinking agent; and (D) a photopolymerization initiator; and a method of forming a coating film using the coating composition.

Abstract: A semiconductor device has a silicon substrate, an n-type well region formed in the silicon substrate, first and second source/drain regions constructed of a p-type diffusion layer formed on the n-type well region, a gate insulator formed in a region located between the first source/drain region and the second source/drain region and a polysilicon formed on the gate insulator. The semiconductor device has oxygen-rich layers for blocking a silicide reaction, which layers are formed in an uppermost portion of the silicon substrate on the side of the polysilicon, and has an oxygen-rich layer for blocking the silicide reaction, which layer is formed in an upper portion of the polysilicon.

Abstract: A method of manufacturing an electronic component unit comprises the steps of forming a conductive pattern on a surface of a substrate, roughening a surface of a connecting area of said conductive pattern, printing an adhesive on the connecting area, connecting an electrode of an electronic component to the electroconductive adhesive on the connecting area, and drawing the adhesive at a temperature of 50-120° C.

Abstract: The invention provides a plastic sorting method and apparatus, which, when plastic pieces comprising a plurality of types of resin plastics are agitated and frictionally charged, are able to impart the plastic pieces a necessary amount of charge or polarity for the thorough separation even if the difference in the amount of the different types of plastic pieces is large and to increase the recovery rate. If the amount of a specified type plastic pieces (1) to be recovered is small, the agitation and the electrostatic separation is carried out after adding the specified type plastic pieces (1) as auxiliary frictional charging material (21) into the frictional charging device (3), and the auxiliary frictional charging material (21) remains in the frictional charging device (3) and is used repeatedly.

Abstract: This invention provides a thermosetting high solids coating composition comprising: (A) a copolymer prepared by polymerizing monomer components comprising (a) 30 to 50 wt. % of vinyltrimethoxysilane and/or vinyltriethoxysilane, (b) 5 to 15 wt. % of N-methylol(meth)acrylamide alkyl ether and (c) 35 to 65 wt. % of another polymerizable unsaturated monomer, (B) a hydroxyl-containing resin having a hydroxyl value of 10 to 200 mg KOH/g, and (C) a curing catalyst. This invention further provides a method for forming a topcoat using said composition. The composition of the invention achieves the following remarkable effects: it forms a coating film excellent in acid resistance and scratch resistance, and it is superior in storage stability and recoat adhesion.

Abstract: The present invention provides a thermosetting high solids coating composition comprising (A) a carboxyl-containing compound, (B) a polyepoxide, and (C) a copolymer prepared by polymerizing monomer components comprising (a) 30 to 50% by weight of vinyltrimethoxysilane and/or vinyltriethoxysilane, (b) 5 to 15% by weight of N-methylol(meth)acrylamide alkyl ether, and (c) 35 to 65% by weight of another polymerizable unsaturated monomer, and a method for forming a topcoat using said composition. The composition of the present invention is highly effective in forming a coating film excellent in resistance to both acids and scratch, and is superior in storage stability and recoat adhesion.

Abstract: A thermal decomposition apparatus for plastics wherein plastics are melted and thermally decomposed, and the resulting decomposition gas is cooled for condensation and recovered in the form of a thermal decomposition oil. The apparatus comprises a thermal decomposition reactor for melting and thermally decomposing the plastics therein, an extraneous matter discharge duct having one end opened in a melt of plastics within the reactor, an extraneous matter collecting container connected to the other end of the discharge duct, and an aspirator for aspirating extraneous matter within the reactor together with the melt through the discharge duct into the container.

Abstract: A thermal decomposition apparatus for plastics wherein plastics are melted and thermally decomposed, and the resulting decomposition gas is cooled for condensation and recovered in the form of a thermal decomposition oil. The apparatus comprises a thermal decomposition reactor for melting and thermally decomposing the plastics therein, an extraneous matter discharge duct having one end opened in a melt of plastics within the reactor, an extraneous matter collecting container connected to the other end of the discharge duct, and an aspirator for aspirating extraneous matter within the reactor together with the melt through the discharge duct into the container.

Abstract: Disclosed are a processes and reactors for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications by the deposition of silicon from a gas containing a silane compound. The equipment includes a reactor vessel which encloses a powder catcher having a cooled surface. Also within the vessel is a cylindrical water jacket which defines multiple reaction chambers. The silicon powder generated in this process adheres to the coolest surfaces, which are those of the powder catcher, and is thereby collected. Little of the powder adheres to the walls of the reaction chambers. In some embodiments, a fan can be provided to increase gas circulation.

Abstract: Disclosed are .[.a.]. processes and reactors for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications by the deposition of silicon from a gas containing a silane compound. The equipment includes a reactor vessel which encloses a powder catcher having a cooled surface. Also within the vessel is a cylindrical water jacket which defines multiple reaction chambers. The silicon powder generated in this process adheres to the coolest surfaces, which are those of the powder catcher, and is thereby collected. Little of the powder adheres to the walls of the reaction chambers. In some embodiments, a fan can be provided to increase gas circulation.