Abstract: There are provided a semiconductor device fabricating method for forming a wiring layer on a semiconductor substrate, followed by cleaning, which may prevent elution and oxidation of the wiring layer, and a treating liquid used in the fabricating method. A Cu wiring, an interlayer film over the Cu wiring and an opening in the interlyaer film to expose the surface of the Cu wiring are formed in a plasma atmosphere. IPA is sprayed to the semiconductor device, and then, an organic release process is performed thereto with an amine solvent to remove an etching residue. The semiconductor device is rinsed with the IPA again to remove the remaining amine, and then is cleaned with a treating liquid, which is alkalescent. Then, it is rinsed with pure water or CO2 water and is dried.

Abstract: A photoresist residue remover composition is provided that includes one type or two or more types of fluoride compound and one type or two or more types chosen from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose (but excluding one that includes ammonium fluoride, a polar organic solvent, water, and ascorbic acid). There is also provided use of the photoresist residue remover composition for removing a photoresist residue and a sidewall polymer remaining after dry etching and after ashing.

Abstract: A photoresist residue remover composition is provided that includes one type or two or more types of fluoride compound and one type or two or more types chosen from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose (but excluding one that includes ammonium fluoride, a polar organic solvent, water, and ascorbic acid). There is also provided use of the photoresist residue remover composition for removing a photoresist residue and a sidewall polymer remaining after dry etching and after ashing.

Abstract: There are provided a semiconductor device fabricating method for forming a wiring layer on a semiconductor substrate, followed by cleaning, which may prevent elution and oxidation of the wiring layer, and a treating liquid used in the fabricating method. A Cu wiring, an interlayer film over the Cu wiring and an opening in the interlyaer film to expose the surface of the Cu wiring are formed in a plasma atmosphere. IPA is sprayed to the semiconductor device, and then, an organic release process is performed thereto with an amine solvent to remove an etching residue. The semiconductor device is rinsed with the IPA again to remove the remaining amine, and then is cleaned with a treating liquid, which is alkalescent. Then, it is rinsed with pure water or CO2 water and is dried.

Abstract: An anticorrosive agent containing, as essential components, (a) urea or a urea derivative and (b) a hydroxy aromatic compound.

Abstract: There are provided a semiconductor device fabricating method for forming a wiring layer on a semiconductor substrate, followed by cleaning, which may prevent elution and oxidation of the wiring layer, and a treating liquid used in the fabricating method. A Cu wiring, an interlayer film over the Cu wiring and an opening in the interlyaer film to expose the surface of the Cu wiring are formed in a plasma atmosphere. IPA is sprayed to the semiconductor device, and then, an organic release process is performed thereto with an amine solvent to remove an etching residue. The semiconductor device is rinsed with the IPA again to remove the remaining amine, and then is cleaned with a treating liquid, which is alkalescent. Then, it is rinsed with pure water or CO2 water and is dried.

Abstract: A photo-resist mask is ashed after the pattern transfer, and is, thereafter, treated with liquid photo-resist remover, wherein photo-resist remover comprises salt produced through interaction between hydrofluoric acid and a base without metal ion, water, water soluble organic solvent and a derivative of benztriazole expressed by the general formula: 1

Abstract: A tank stores a drying liquid for drying a semiconductor wafer. A boat vertically holds a plurality of target semiconductor wafers to be dried. The semiconductor wafers which are held by the boat are entirely soaked in the drying liquid. After this, the semiconductor wafers are lifted from the drying liquid at a rate in a range from 1 to 3 mm/min, so as to be dried. At this time, the surface of the drying liquid is divided with using a dividing liquid at each side of the semiconductor wafer. The dividing plate divides the surface of the drying liquid, thereby to prevent particles, which are once removed from the semiconductor wafer, from being again adhered onto the semiconductor wafer.

Abstract: A tank stores a drying liquid for drying a semiconductor wafer. A boat vertically holds a plurality of target semiconductor wafers to be dried. The semiconductor wafers which are held by the boat are entirely soaked in the drying liquid. After this, the semiconductor wafers are lifted from the drying liquid at a rate in a range from 1 to 3 mm/min, so as to be dried. At this time, the surface of the drying liquid is divided with using a dividing liquid at each side of the semiconductor wafer. The dividing plate divides the surface of the drying liquid, thereby to prevent particles, which are once removed from the semiconductor wafer, from being again adhered onto the semiconductor wafer.

Abstract: A stripper composition containing an anticorrosive agent containing, as essential components, (a) urea or a urea derivative and (b) a hydroxy aromatic compound.

Abstract: An anticorrosive agent containing, as essential components, (a) urea or a urea derivative and (b) a hydroxy aromatic compound.

Abstract: In a method for forming in a semiconductor device a stacked structure capacitor having a lower capacitor plate and an upper capacitor plate sandwiching a dielectric film therebetween, after a first conducting film, which becomes the lower capacitor plate, is formed, ionized clusters are implanted or impacted to a surface of the first conducting film. Thereafter, cluster-implanted regions are selectively removed from the surface of the first conducting film to resultantly roughen the surface of the first conducting film. Then, a dielectric film is formed on the roughened surface of the first conducting film, and a second conducting film, which becomes the upper capacitor plate, is formed on the dielectric film.