Abstract: The present invention provides a transistor element having a laminated structure, the laminated structure comprising a sheet-like base electrode being arranged between an emitter electrode and a collector electrode; at least one p-type organic semiconductor layer being provided on each of the surface and the back sides of the base electrode; and a current transmission promotion layer being formed, on each of the surface and back sides of the base electrode, between the base electrode and the p-type organic semiconductor layer or layers provided on each of the surface and back sides of the base electrode. According to the present invention, it becomes possible to provide a transistor element (MBOT) that is, in particular, stably supplied through a simple production process, has a structure capable of being mass-produced, and has a large current modulation effect and an excellent ON/OFF ratio at a low voltage in the emitter electrode and the collector electrode.

Abstract: The present invention provides a transistor element having a laminated structure, the laminated structure comprising a sheet-like base electrode being arranged between an emitter electrode and a collector electrode; at least one p-type organic semiconductor layer being provided on each of the surface and the back sides of the base electrode; and a current transmission promotion layer being formed, on each of the surface and back sides of the base electrode, between the base electrode and the p-type organic semiconductor layer or layers provided on each of the surface and back sides of the base electrode. According to the present invention, it becomes possible to provide a transistor element (MBOT) that is, in particular, stably supplied through a simple production process, has a structure capable of being mass-produced, and has a large current modulation effect and an excellent ON/OFF ratio at a low voltage in the emitter electrode and the collector electrode.

Abstract: A current-amplifying transistor device is provided, between an emitter electrode and a collector electrode, with two organic semiconductor layers and a sheet-shaped base electrode. One of the organic semiconductor layers is arranged between the emitter electrode and the base collector electrode, and has a diode structure of a p-type organic semiconductor layer and an n-type p-type organic semiconductor layer. A current-amplifying, light-emitting transistor device including the current-amplifying transistor device and an organic EL device portion formed in the current-amplifying transistor device is also disclosed.

Abstract: An organic semiconductor material is represented by the following formula (F): wherein A represents a cyclic conjugated skeleton structure formed of one or more aromatic rings, and R1 and R2 each independently represent a substituted or unsubstituted alkyl group. The organic semiconductor material has high electron mobility and high on/off ratio, and can form an organic semiconductor thin film by a solution process making use of its solution.

Abstract: A current-amplifying transistor device is provided, between an emitter electrode and a collector electrode, with two organic semiconductor layers and a sheet-shaped base electrode. One of the organic semiconductor layers is arranged between the emitter electrode and the base collector electrode, and has a diode structure of a p-type organic semiconductor layer and an n-type p-type organic semiconductor layer. A current-amplifying, light-emitting transistor device including the current-amplifying transistor device and an organic EL device portion formed in the current-amplifying transistor device is also disclosed.

Abstract: An organic semiconductor material is represented by the following formula (F): wherein A represents a cyclic conjugated skeleton structure formed of one or more aromatic rings, and R1 and R2 each independently represent a substituted or unsubstituted alkyl group. The organic semiconductor material has high electron mobility and high on/off ratio, and can form an organic semiconductor thin film by a solution process making use of its solution.

Abstract: Provided is a process for producing a toner comprising steps of: dispersing a polymerizable monomer composition containing a polymerizable monomer, a polar resin, a colorant, and a wax component in a aqueous dispersion medium to granulate the polymerizable monomer composition; and polymerizing the polymerizable monomer, wherein the polymerizable monomer is a vinyl-based polymerizable monomer, the polar resin is a styrene-methacrylic acid copolymer or styrene-acrylic acid copolymer; the polymerizable monomer composition contains 0.0050 to 0.025 mass % of divinylbenzene; and the toner has a glass transition temperature (TgA) measured with a differential scanning calorimeter (DSC) of 40° C. or higher and 60° C. or lower and a peak temperature (P1) of a highest endothermic peak measured with the DSC of 70° C. or higher and 110° C. or lower, and P1 and TgA satisfy a relationship of 15° C.?(P1?TgA)?70° C.

Abstract: Provided is a toner including toner particles each containing at least a binder resin, a colorant, and a wax component, and an inorganic fine powder, the toner being wherein: in a microscopic compression test on the toner, a recovery ratio Z(25) and the gradient of a load-displacement curve R(25) each satisfy a specific range; and the toner has a glass transition temperature (TgA) measured with a differential scanning calorimeter (DSC) in a specific range and a temperature (P1) of the highest endothermic peak measured with the DSC in a specific range, and the temperature (P1) of the highest endothermic peak and the glass transition temperature (TgA) satisfy a specific relationship.

Abstract: Provided is a yellow toner having toner particles each containing at least a binder resin, a colorant, and a polar resin, the yellow toner being characterized in that: the colorant is a coloring compound having a specific structure; in a microscopic compression test at a measurement temperature of 25° C., the toner has a recovery ratio Z(25) of 40 to 80%; and the toner has a glass transition temperature (TgA) measured with a differential scanning calorimeter (DSC) of 40° C. to 60° C. and a temperature (P1) of the highest endothermic peak measured with the DSC of 70° C. to 90° C., and the temperature (P1) of the highest endothermic peak and the glass transition temperature (TgA) satisfy the relationship of 15° C.?P1?TgA?50° C.

Abstract: Provided is a toner including toner particles each containing at least a binder resin, a colorant, and a wax component, and an inorganic fine powder, the toner being wherein: in a microscopic compression test on the toner, a recovery ratio Z(25) and the gradient of a load-displacement curve R(25) each satisfy a specific range; and the toner has a glass transition temperature (TgA) measured with a differential scanning calorimeter (DSC) in a specific range and a temperature (P1) of the highest endothermic peak measured with the DSC in a specific range, and the temperature (P1) of the highest endothermic peak and the glass transition temperature (TgA) satisfy a specific relationship.

Abstract: The present invention relates to a gene for an enzyme involving in the synthesis of GDP-L-fucose. Particularly, the present invention relates to a GDP-4-keto-6-deoxy-D-mannose-3, 5-epimerase-4-reductase gene derived from Arabidopsis thaliana, and a process for producing GDP-L-fucose using the gene. An enzyme encoded by the gene is (a) a protein comprising an amino acid sequence represented by SEQ ID NO: 1; or (b) a protein comprising an amino acid sequence derived from the amino acid sequence of SEQ ID NO: 1 by deletion, substitution, addition or insertion of one or several amino acid residues, and having GDP-4-keto-6-deoxy-D-mannose-3, 5-epimerase-4-reductase activity. The present invention enables efficient mass production of GDP-L-fucose which is essential in performing addition of fucose, which has a very important function in sugar chains.

Abstract: A resin-dispersed organic semiconductor layer (3) is formed on a lower electrode (2) of an ITO transparent electrode formed on a glass substrate (1). An upper electrode (4) of a gold deposited film is formed on the resin-dispersed organic semiconductor layer (3). The resin-dispersed organic semiconductor layer (3) is formed by spin-coating a dispersion liquid prepared by mixing a perylene pigment and polycarbonate in a THF solvent and drying the coating. By applying a voltage by means of the electrodes (2, 4) and by irradiating the resin-dispersed organic semiconductor layer (3) with light, a multiplied light irradiation-induced current flows.

Abstract: A resin-dispersed organic semiconductor layer (3) is formed on a lower electrode (2) of an ITO transparent electrode formed on a glass substrate (1). An upper electrode (4) of a gold deposited film is formed on the resin-dispersed organic semiconductor layer (3). The resin-dispersed organic semiconductor layer (3) is formed by spin-coating a dispersion liquid prepared by mixing a perylene pigment and polycarbonate in a THF solvent and drying the coating. By applying a voltage by means of the electrodes (2, 4) and by irradiating the resin-dispersed organic semiconductor layer (3) with light, a multiplied light irradiation-induced current flows.

Abstract: The present invention relates to a mannose-1-phosphate transferase gene from yeast (Saccharomyces cerevisiae), a process for producing a mannose-1-phosphate-containing acidic sugar chain which comprises culturing yeast cells transformed with a plasmid DNA containing said gene, obtaining mannose-1-phosphate transferase from the culture, and allowing the enzyme to act on a neutral core sugar chain in vivo or in vitro, and a process for producing a phosphate-containing acidic sugar chain which comprises removal of a mannose moiety by acid-treatment of said mannose-1-phosphate-containing acidic sugar chain. According to the present invention, an acidic sugar chain having mannose-1-phosphate added to the same neutral core sugar chain as a high mannose type sugar chain produced by mammalian (e.g. human) cells can be produced in large amounts with high purity by genetic engineering means using yeast.