Abstract: In a scheme for analyzing low magnification defect images and determining whether or not a defect detection method using cell comparison is applicable, if a defect detection method using cell comparison cannot be applied and the proportion transitioning to a defect detection method using die comparison increases, throughput may decrease even more than starting out with defect detection by a defect detection method using die comparison. The purpose of present invention is to carry out high precision defect detection with a stable throughput. In the present invention, the defect detection processing mode applied for detecting defects from the defect image is determined using a reference image, and defects are detected from the defect image by the defect detection processing mode that has been determined.

Abstract: In a scheme for analyzing low magnification defect images and determining whether or not a defect detection method using cell comparison is applicable, if a defect detection method using cell comparison cannot be applied and the proportion transitioning to a defect detection method using die comparison increases, throughput may decrease even more than starting out with defect detection by a defect detection method using die comparison. The purpose of present invention is to carry out high precision defect detection with a stable throughput. In the present invention, the defect detection processing mode applied for detecting defects from the defect image is determined using a reference image, and defects are detected from the defect image by the defect detection processing mode that has been determined.

Abstract: In order to provide an electron microscope which enables the operator to position the field-of-view easily and accurately on a target fault, the electron microscope for observing a surface or inside of a semiconductor wafer or a mask for exposing a semiconductor pattern for faults and/or foreign objects, is provided comprising a function of loading measurement data of coordinates or sizes of faults or objects which were observed by another wafer or mask inspecting apparatus, moving the field of view of the electron microscope to the area where said fault or object exists, and displaying the coordinates of faults or objects which were obtained by another wafer or mask inspecting apparatus, the field-of-view of the electron microscope and its vicinity, a function of a pointing device switch which moves the field-of-view of the electron microscope to a position which is pointed to by a pointer on said display, and a function of changing the display as said field-of-view moves.

Abstract: In order to provide an electron microscope which enables the operator to position the field-of-view easily and accurately on a target fault, the electron microscope for observing a surface or inside of a semiconductor wafer or a mask for exposing a semiconductor pattern for faults and/or foreign objects, is provided comprising a function of loading measurement data of coordinates or sizes of faults or objects which were observed by another wafer or mask inspecting apparatus, moving the field of view of the electron microscope to the area where said fault or object exists, and displaying the coordinates of faults or objects which were obtained by another wafer or mask inspecting apparatus, the field-of-view of the electron microscope and its vicinity, a function of a pointing device switch which moves the field-of-view of the electron microscope to a position which is pointed to by a pointer on said display, and a function of changing the display as said field-of-view moves.

Abstract: In order to provide an electron microscope which enables the operator to position the field of view easily and accurately on a target fault, the electron microscope for observing a surface or inside of a semiconductor wafer or a mask for exposing a semiconductor pattern for faults and/or foreign objects, is provided comprising a function of loading measurement data of coordinates or sizes of faults or objects which were observed by another wafer or mask inspecting apparatus, moving the field of view of the electron microscope to the area where said fault or object exists, and displaying the coordinates of faults or objects which were obtained by another wafer or mask inspecting apparatus, the field of view of the electron microscope and its vicinity, a function of a pointing device switch which moves the field of view of the electron microscope to a position which is pointed to by a pointer on said display, and a function of changing the display as said field of view moves.