Abstract: An information processing apparatus includes a controller that acquires information about an article to be loaded onto a vehicle, acquires a characteristic of a person who can affect the article based on the information, and executes a concurrent riding determination to determine existence of concurrent riding on the vehicle by the article and a user having the characteristic.

Abstract: An information processing apparatus includes a memory that stores information on a package to be transported by a vehicle traveling within a site of a factory and attributes of each employee working at the factory, a controller that sets a condition on an employee who can be in charge of loading or unloading the package and formulates a transportation plan for the package based on the information on the package, and identifies at least one employee who has attributes satisfying the condition, from among one or more employees scheduled to ride in the vehicle transporting the package, based on the attributes of each employee and the condition on the employee who can be in charge of loading or unloading the package, and a communication interface that notifies a mobile terminal carried by the at least one employee of a request for loading or unloading the package.

Abstract: Provided are a solid-state imaging apparatus, a method for manufacturing a solid-state imaging apparatus, and an electronic apparatus equipped with a solid-state imaging apparatus that can reduce the size of a semiconductor chip in such a way that one semiconductor substrate having a logic circuit controls two sensors. Provided is a solid-state imaging apparatus including a first sensor, a first semiconductor substrate having a memory, a second semiconductor substrate having a logic circuit, and a second sensor, in which the first sensor, the first semiconductor substrate, the second semiconductor substrate, and the second sensor are arranged in this order.

Abstract: There is provided an imaging device including: an imaging element provided with a photoelectric converter for each pixel, and having a light-receiving surface and a non-light-receiving surface opposed to the light-receiving surface; and an electric element including a support substrate and a floating section, the support substrate provided on side of the non-light-receiving surface of the imaging element and opposed to the imaging element, and the floating section provided between the support substrate and the imaging element, and disposed with a gap interposed between the floating section and each of the support substrate and the imaging element.

Abstract: The present technology relates to an imaging element, a method of manufacturing the same, and an electronic appliance capable of reducing false signal output caused by reflected light of incident light. An imaging element includes: a semiconductor substrate including a photoelectric conversion unit for each pixel, the photoelectric conversion unit photoelectrically converting incident light; a color filter layer that is formed on the semiconductor substrate and that passes the incident light of a predetermined wavelength; a light-shielding wall that is formed at a pixel boundary on the semiconductor substrate so as to have a height greater than a height of the color filter layer; and a protective substrate that is disposed via a seal resin and that protects an upper-surface side of the color filter layer. The present technology can be applied to, for example, an imaging element having a CSP structure and the like.

Abstract: Provided are a solid-state imaging apparatus, a method for manufacturing a solid-state imaging apparatus, and an electronic apparatus equipped with a solid-state imaging apparatus that can reduce the size of a semiconductor chip in such a way that one semiconductor substrate having a logic circuit controls two sensors. Provided is a solid-state imaging apparatus including a first sensor, a first semiconductor substrate having a memory, a second semiconductor substrate having a logic circuit, and a second sensor, in which the first sensor, the first semiconductor substrate, the second semiconductor substrate, and the second sensor are arranged in this order.

Abstract: In pixels that are two-dimensionally arranged in a matrix fashion in the pixel array unit of a solid-state imaging element, a photoelectric conversion film having a light shielding film buried therein is formed and stacked on the light incident side of the photodiode. The present technique can be applied to a CMOS image sensor compatible with the global shutter system, for example.

Abstract: In pixels that are two-dimensionally arranged in a matrix fashion in the pixel array unit of a solid-state imaging element, a photoelectric conversion film having a light shielding film buried therein is formed and stacked on the light incident side of the photodiode. The present technique can be applied to a CMOS image sensor compatible with the global shutter system, for example.

Abstract: In pixels that are two-dimensionally arranged in a matrix fashion in the pixel array unit of a solid-state imaging element, a photoelectric conversion film having a light shielding film buried therein is formed and stacked on the light incident side of the photodiode. The present technique can be applied to a CMOS image sensor compatible with the global shutter system, for example.

Abstract: In pixels that are two-dimensionally arranged in a matrix fashion in the pixel array unit of a solid-state imaging element, a photoelectric conversion film having a light shielding film buried therein is formed and stacked on the light incident side of the photodiode. The present technique can be applied to a CMOS image sensor compatible with the global shutter system, for example.

Abstract: In pixels that are two-dimensionally arranged in a matrix fashion in the pixel array unit of a solid-state imaging element, a photoelectric conversion film having a light shielding film buried therein is formed and stacked on the light incident side of the photodiode. The present technique can be applied to a CMOS image sensor compatible with the global shutter system, for example.

Abstract: In pixels that are two-dimensionally arranged in a matrix fashion in the pixel array unit of a solid-state imaging element, a photoelectric conversion film having a light shielding film buried therein is formed and stacked on the light incident side of the photodiode. The present technique can be applied to a CMOS image sensor compatible with the global shutter system, for example.

Abstract: In pixels that are two-dimensionally arranged in a matrix fashion in the pixel array unit of a solid-state imaging element, a photoelectric conversion film having a light shielding film buried therein is formed and stacked on the light incident side of the photodiode. The present technique can be applied to a CMOS image sensor compatible with the global shutter system, for example.

Abstract: In pixels that are two-dimensionally arranged in a matrix fashion in the pixel array unit of a solid-state imaging element, a photoelectric conversion film having a light shielding film buried therein is formed and stacked on the light incident side of the photodiode. The present technique can be applied to a CMOS image sensor compatible with the global shutter system, for example.

Abstract: Disclosed herein is a solid-state imaging device including: a sensor element having a plurality of pixels each having a photoelectric conversion section; and a logic element attached to the sensor element in such a manner as to be stacked on the sensor element face-to-face and provided with a pad electrode. In a stacked body of the sensor and logic elements, a pad opening is provided above the top surface of the pad electrode facing the sensor element, and a pad periphery guard ring is provided to surround the side portion of the pad opening. The pad periphery guard ring is formed by integrally filling, on the side of the pad opening, an entire trench that is at least as deep as the pad opening with a metal material.

Abstract: A solid-state image pickup device is provided. The first pixel isolation member includes impurity ions implanted in a first region of the semiconductor substrate so that at least two pixels are disposed between portions of the first region when viewed from a surface of the substrate. A second isolation member includes a trench having an electrocondcutive material disposed therein. The trench is formed in a second region of the substrate different from the first pixel isolation member so that the at least two pixels are disposed between portions of the second region when viewed from the surface of the semiconductor substrate.

Abstract: A method for manufacturing a solid-state image pickup device is provided. In this method, a pixel isolation member is formed in a semiconductor substrate including pixels, and the thickness of the substrate is reduced by CMP. For forming the pixel isolation member, a first pixel isolation member is formed by implanting impurity ions in a region of the substrate so that the pixels are disposed between portions of the region when viewed from a surface of the substrate. A second isolation member is also formed by forming a trench in a region of the substrate different from the first pixel isolation member so that the pixels are disposed between portions of the region, and then filling the trench with an electroconductive material harder to polish by CMP than the substrate. The CMP is performed on the rear side of the substrate using the second pixel isolation member as a stopper.

Abstract: A method for manufacturing a solid-state image pickup device is provided. A first pixel isolation member is formed in a semiconductor substrate including pixels by implanting impurity ions in a first region of the substrate to separate pixels in the first region from each other when viewed from a surface of the substrate. A second pixel isolation member is also formed in the substrate by forming a trench in a second region of the substrate different from the first region to separate pixels in the second region from each other, and filling the trench with an electroconductive material harder to polish by CMP than the substrate. The thickness of the substrate is reduced by CMP on a rear surface of the substrate using the second pixel isolation member as a stopper.

Abstract: Disclosed herein is a solid-state imaging device including: a sensor element having a plurality of pixels each having a photoelectric conversion section; and a logic element attached to the sensor element in such a manner as to be stacked on the sensor element face-to-face and provided with a pad electrode. In a stacked body of the sensor and logic elements, a pad opening is provided above the top surface of the pad electrode facing the sensor element, and a pad periphery guard ring is provided to surround the side portion of the pad opening. The pad periphery guard ring is formed by integrally filling, on the side of the pad opening, an entire trench that is at least as deep as the pad opening with a metal material.

Abstract: A film forming method includes the steps of forming a F-doped carbon film by using a source gas containing C and F, and modifying the F-doped carbon film by radicals, the source gas having a F/C ratio larger than 1 and smaller than 2, the F/C ratio being defined as a ratio of a number of F atoms to a number of C atoms in a source gas molecule.