Patents by Inventor Kenichi Obata

Kenichi Obata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11958101
    Abstract: A method for manufacturing a forged article, capable of improving the durability of a die for forging is provided. The method, includes forging a steel material, by using a die, by spraying or applying a water-soluble polymer lubricant containing 0.01 to 0.98 mass % of a water-soluble sulfate onto a working surface of the die, the die being made of a raw material having a constituent composition of by mass %, of 0.4 to 0.7% of C, 1.0% or less of Si, 1.0% or less of Mn, 4.0 to 6.0% of Cr, 2.0 to 4.0% of (Mo+½W), 0.5 to 2.5% of (V+Nb), 0 to 1.0% of Ni, 0 to 5.0% of Co, 0.02% or less of N, and a remnant composed of Fe and impurities, and having hardness of 55 to 60 HRC, and the die including a nitrided layer or a nitrosulfidized layer on the working surface thereof.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: April 16, 2024
    Assignees: PROTERIAL, LTD., TOYOTA JIDOSHA KABUSHIKI KAISHA, DAIDO CHEMICAL CO., LTD., UMETOKU CO., LTD
    Inventors: Tatsuya Shouji, Shuho Koseki, Kenichi Inoue, Katsuhiro Obata, Satoshi Murakami, Naoki Hayashi, Yoshikazu Suzuki, Toshifumi Miyamoto, Toru Otomo, Nobuhiro Ikeda, Kousuke Uda, Takashi Ogisu
  • Publication number: 20230395617
    Abstract: There is provided a solid-state imaging device capable of preventing the sensitivity difference from being generated between the pixels. The fixed imaging device of the present disclosure includes: a first pixel; and a second pixel located in a first direction of the first pixel, in which each of the first and second pixels includes a first transistor and a second transistor, and the first and second transistors in the second pixel are disposed periodically in the first direction with respect to the first and second transistors in the first pixel.
    Type: Application
    Filed: October 19, 2021
    Publication date: December 7, 2023
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Mikinori ITO, Natsuko OOTANI, Yutaro KOMURO, Akira OKADA, Yuhei AOTANI, Yuichi YAMAGUCHI, Tsubasa SAKAKI, Masumi ABE, Kodai KANEYASU, Yuta NOGUCHI, Kazuki TAKAHASHI, Hirofumi YAMADA, Kohei YAMASHINA, Ryosuke TAKAHASHI, Yoshiki SAITO, Yusuke KIKUCHI, Yukihito IIDA, Kenichi OBATA, Ryuichi ITOH, Yuki UEMURA
  • Publication number: 20230353905
    Abstract: A solid-state imaging element and an electronic device are provided. A pixel at least includes a photoelectric conversion unit that performs photoelectric conversion, an FD unit to which charge generated in the photoelectric conversion unit is transferred, and an amplification transistor that has a gate electrode to which the FD unit is connected. A reference signal is input to a MOS transistor. The reference signal is referred to when AD conversion is performed on a pixel signal according to an amount of light received by the pixel. Then, a shared structure is employed in which a predetermined number of pixels share an AD converter that includes a differential pair including the MOS transistor and the amplification transistor. Each of the pixels is provided with a selection transistor that is used to select a pixel for which AD conversion is performed on the pixel signal.
    Type: Application
    Filed: July 11, 2023
    Publication date: November 2, 2023
    Inventors: KENICHI OBATA, MASAHIKO NAKAMIZO
  • Patent number: 11743619
    Abstract: A solid-state imaging element and an electronic device are provided. A pixel at least includes a photoelectric conversion unit that performs photoelectric conversion, an FD unit to which charge generated in the photoelectric conversion unit is transferred, and an amplification transistor that has a gate electrode to which the FD unit is connected. A reference signal is input to a MOS transistor. The reference signal is referred to when AD conversion is performed on a pixel signal according to an amount of light received by the pixel. Then, a shared structure is employed in which a predetermined number of pixels share an AD converter that includes a differential pair including the MOS transistor and the amplification transistor. Each of the pixels is provided with a selection transistor that is used to select a pixel for which AD conversion is performed on the pixel signal.
    Type: Grant
    Filed: September 8, 2022
    Date of Patent: August 29, 2023
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Kenichi Obata, Masahiko Nakamizo
  • Publication number: 20230007209
    Abstract: A solid-state imaging element and an electronic device are provided. A pixel at least includes a photoelectric conversion unit that performs photoelectric conversion, an FD unit to which charge generated in the photoelectric conversion unit is transferred, and an amplification transistor that has a gate electrode to which the FD unit is connected. A reference signal is input to a MOS transistor. The reference signal is referred to when AD conversion is performed on a pixel signal according to an amount of light received by the pixel. Then, a shared structure is employed in which a predetermined number of pixels share an AD converter that includes a differential pair including the MOS transistor and the amplification transistor. Each of the pixels is provided with a selection transistor that is used to select a pixel for which AD conversion is performed on the pixel signal.
    Type: Application
    Filed: September 8, 2022
    Publication date: January 5, 2023
    Inventors: KENICHI OBATA, MASAHIKO NAKAMIZO
  • Patent number: 11463645
    Abstract: A solid-state imaging element and an electronic device is provided. A pixel at least includes a photoelectric conversion unit that performs photoelectric conversion, an FD unit to which charge generated in the photoelectric conversion unit is transferred, and an amplification transistor that has a gate electrode to which the FD unit is connected. A reference signal is input to a MOS transistor. The reference signal is referred to when AD conversion is performed on a pixel signal according to an amount of light received by the pixel. Then, a shared structure is employed in which a predetermined number of pixels share an AD converter that includes a differential pair including the MOS transistor and the amplification transistor. Each of the pixels is provided with a selection transistor that is used to select a pixel for which AD conversion is performed on the pixel signal.
    Type: Grant
    Filed: November 16, 2018
    Date of Patent: October 4, 2022
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Kenichi Obata, Masahiko Nakamizo
  • Publication number: 20200404211
    Abstract: The present disclosure relates to a solid-state imaging element and an electronic device that enable performance to be further improved. A pixel at least includes: a photoelectric conversion unit configured to perform photoelectric conversion; an FD unit to which charge generated in the photoelectric conversion unit is transferred; and an amplification transistor that has a gate electrode to which the FD unit is connected. A reference signal is input to a MOS transistor. The reference signal is referred to when AD conversion is performed on a pixel signal according to an amount of light received by the pixel. Then, a shared structure is employed in which a predetermined number of pixels share an AD converter that includes a differential pair including the MOS transistor and the amplification transistor. Each of the pixels is provided with a selection transistor that is used to select a pixel for which AD conversion is performed on the pixel signal.
    Type: Application
    Filed: November 16, 2018
    Publication date: December 24, 2020
    Inventors: KENICHI OBATA, MASAHIKO NAKAMIZO
  • Patent number: 5137807
    Abstract: The present invention is directed to a method for detecting hepatic diseases which are associated with fibrosis by determining the level of human prolyl hydroxylase in a serum sample which comprises:(a) contacting a serum sample of a patient suspected of having said hepatic disease associated with fibrosis with a monoclonal antibody specific to the .beta.-subunit of human prolyl hydroxylase to form an antigen antibody complex bound on a solid support;(b) contacting said antigen antibody complex bound on said solid support with an enzyme-labeled monoclonal or enzyme-labeled polyclonal antibody specific to human prolyl hydroxylase to form an antibody antigen enzyme-labeled antibody complex; and(c) measuring the amount of enzyme activity of said bound antibody antigen enzyme-labeled antibody complex to determine the level of human prolyl hydroxylase present in said serum sample.
    Type: Grant
    Filed: July 17, 1989
    Date of Patent: August 11, 1992
    Assignee: Fuji Yakuhin Kogyo Kabushiki Kaisha
    Inventors: Shinichi Yoshida, Eiji Ishikawa, Akira Oshima, Yasuo Bai, Yasuteru Muragaki, Kazushi Iwata, Kenichi Obata, Yasuo Nagai