Abstract: According to one embodiment, a magnetic memory device includes an electrode, and a magnetoresistance effect element provided on the electrode. The electrode includes a first electrode portion and a second electrode portion provided between the magnetoresistance effect element and the first electrode portion and containing a metal element selected from molybdenum (Mo) and ruthenium (Ru).

Abstract: According to one embodiment, a magnetic memory device includes a first wiring line extending in a first direction, a second wiring line provided on an upper layer side of the first wiring line and extending in a second direction intersecting the first direction, and a memory cell provided between the first wiring line and the second wiring line and including a magnetoresistance effect element and a switching element which are stacked in a third direction intersecting the first direction and the second direction. The first wiring line includes a first conductive layer and a second conductive layer provided on the first conductive layer and formed of a material containing carbon (C).

Abstract: An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition exhibits dissolution contrast, acid diffusion suppressing effect, and excellent lithography performance factors such as CDU, LWR and sensitivity.

Abstract: A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.

Abstract: A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.

Abstract: A composition comprising (A) a polymer comprising recurring units (a1) having a carboxyl group protected with an acid labile group and recurring units (a2) having a cyclic ester, cyclic carbonate or cyclic sulfonate structure, (B) a thermal acid generator, and (C) an organic solvent is suited to form a protective film between a substrate and a resist film. Even when a metal-containing resist film is used, the protective film is effective for preventing the substrate from metal contamination.

Abstract: A resist composition comprising a sulfonium salt having formula (1) as PAG, a base polymer, and an organic solvent, when processed by lithography, has light transmittance, acid diffusion suppressing effect, and excellent lithography performance factors such as DOF, LWR and MEF. A lithography process for forming a resist pattern from the composition is also provided.

Abstract: A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group and further containing at least one repeating unit having an aromatic substituent; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms with a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms without a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process of using it that show a particularly favorable mask dimension dependency and CDU in photolithography where a light source is a high-energy beam such as a KrF excimer laser beam, an electron beam, or an extreme ultraviolet ray.

Abstract: A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.

Abstract: An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition exhibits a high sensitivity, and excellent lithography performance factors such as CDU and LWR.

Abstract: An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition exhibits dissolution contrast, acid diffusion suppressing effect, and excellent lithography performance factors such as CDU, LWR and sensitivity.

Abstract: A resist composition comprising a sulfonium salt having formula (1) as PAG, a base polymer, and an organic solvent, when processed by lithography, has light transmittance, acid diffusion suppressing effect, and excellent lithography performance factors such as DOF, LWR and MEF. A lithography process for forming a resist pattern from the composition is also provided.

Abstract: A composition comprising (A) a polymer comprising recurring units (a1) having a carboxyl group protected with an acid labile group and recurring units (a2) having a cyclic ester, cyclic carbonate or cyclic sulfonate structure, (B) a thermal acid generator, and (C) an organic solvent is suited to form a protective film between a substrate and a resist film. Even when a metal-containing resist film is used, the protective film is effective for preventing the substrate from metal contamination.

Abstract: A resist composition comprising a polymer comprising recurring units of lactone and a PAG is provided. The resist composition has a high dissolution contrast during organic solvent development, and improved resist properties including MEF and CDU and forms a fine hole pattern with improved roundness and size control.

Abstract: A photo acid generator represented (1a), wherein R01 and R02 each independently represent a linear monovalent hydrocarbon group having 1 to 20 carbon atoms or a branched or cyclic monovalent hydrocarbon group having 3 to 20 carbon atoms which may be substituted with or interposed by a heteroatom; R03 represents a linear divalent hydrocarbon group having 1 to 30 carbon atoms or a branched or cyclic divalent hydrocarbon group having 3 to 30 carbon atoms which may be substituted with a heteroatom, or interposed by a heteroatom; and R01 and R02 may be mutually bonded to form a ring together with the sulfur atom in the formula. A photo acid generator can give a pattern excellent in resolution and LER and having a rectangular profile in the photolithography using a high energy beam like ArF excimer laser light, EUV, and electron beam as a light source.

Abstract: A resist composition comprising a polymer comprising recurring units of lactone and a PAG is provided. The resist composition has a high dissolution contrast during organic solvent development, and improved resist properties including MEF and CDU and forms a fine hole pattern with improved roundness and size control.

Abstract: A photo acid generator represented (1a), wherein R01 and R02 each independently represent a linear monovalent hydrocarbon group having 1 to 20 carbon atoms or a branched or cyclic monovalent hydrocarbon group having 3 to 20 carbon atoms which may be substituted with or interposed by a heteroatom; R03 represents a linear divalent hydrocarbon group having 1 to 30 carbon atoms or a branched or cyclic divalent hydrocarbon group having 3 to 30 carbon atoms which may be substituted with a heteroatom, or interposed by a heteroatom; and R01 and R02 may be mutually bonded to form a ring together with the sulfur atom in the formula. A photo acid generator can give a pattern excellent in resolution and LER and having a rectangular profile in the photolithography using a high energy beam like ArF excimer laser light, EUV, and electron beam as a light source.

Abstract: A pattern is formed by coating a resist composition comprising a resin component comprising recurring units of formula (1) and a photoacid generator of formula (2) onto a substrate, baking, exposure, PEB and developing in an organic solvent. In formulae (1) and (2), R1 and R2 are C1-C3 alkyl, R4 is hydrogen or methyl, A is hydrogen or trifluoromethyl, R101, R102 and R103 are hydrogen or a monovalent hydrocarbon group, m and n are 0-5, p is 0-4, and L is a single bond or a divalent hydrocarbon group.

Abstract: An O-ring shaped annular rib (63) is disposed around the outer periphery of a flexible diaphragm member (62), and grooves (70, 71) are formed in first and second resin members (60, 61) for receiving the annular rib (63) in the compressed state. A hollow space is defined between the first and second members (60) for holding the diaphragm (62) in the clamped state. A contact surface (64) where the first and second synthetic resin members (60, 61) come into contact with each other, is located outward of the grooves (70, 71), and is subjected to welding with a supersonic welding tool (65). A gap (76) is formed between the first synthetic resin member (60) and the supersonic welding tool (65), which gap disappears as the welding progresses. At this time, further progress of the welding operation is inhibited by allowing the first synthetic resin member (60) and the supersonic welding tool (65) to provide a predetermined compression for the annular rib (63).