Abstract: A copper fin material for heat-exchangers is characterized in that, on the surface of Cu or Cu alloy strip, an inner side diffused layer comprising Cu and Zn and a surface side diffused layer provided on the surface side thereof comprising Cu, Zn and elements with a lower diffusion coefficient into Cu than that of Zn is formed. A method of producing the same is characterized in that, after an alloy film comprising Zn and element with a lower diffusion coefficient into Cu than that of Zn is formed on the surface of a Cu or Cu alloy strip, a diffusion treatment is performed under heat so that, on the surface of the Cu or Cu alloy strip, an inner side diffused layer comprising Cu and Zn and a surface side diffused layer provided on the surface side thereof comprising Cu, Zn and elements with a lower diffusion coefficient into Cu than that of Zn are formed. Alternatively, the diffusion treatment under heat is combined with a rolling processing step.

Abstract: A copper fin material for heat-exchanger characterized in that, on the surface of Cu or Cu alloy strip, the formation of an inner side diffused layer comprising Cu and Zn and a surface side diffused layer being provided on the surface side thereof and comprising Cu, Zn and elements with a lower diffusion coefficient into Cu than that of Zn is disclosed. A method of producing the same is characterized in that, after an alloy film comprising elements with a lower diffusion coefficient into Cu than that of Zn and Zn was formed on the surface of Cu or Cu alloy strip, a diffusion treatment is given under heat so that, on the surface of Cu or Cu alloy strip, an inner side diffused layer comprising Cu and Zn and a surface side diffused layer being provided on the surface side thereof and comprising Cu, Zn and elements with a lower diffusion coefficient into Cu than that of Zn are formed, or the diffusion treatment under heat and the rolling processing are given.

Abstract: A high electroconductive copper alloy is disclosed which contains 0.003 to 1.0 wt % of Zn, 0.005 to 0.1 wt % of Mg and the remainder of Cu. Not more than 0.1 wt % of the total amount of either one or more of Cr, Mn, Fe, Co, Ni, Y, Sn, Si and Zr may be contained further, while the amount of oxygen contained is confined to not more than 100 ppm in both cases.