Abstract: In an active matrix type liquid crystal display device, at least material of one element, forming the connecting portion between signal transfer lines related to the scan lines and the data signal lines of the device, is an alloy of at least a chemical element selected from the group consisting of Nb, Mo, Ta, and W, with Cr, the scan lines and means for generating scan pulses are connected to each other via a first opening formed in an insulating film, the data signal lines and the means for generating image data are connected to each other via a second opening formed in an insulating film, a polycrystalline thin film, which is connected to the means for generating scan pulses, is inserted into the first opening, and a polycrystalline thin film, which is connected to the means for generating image data, is inserted into the second opening, and the polycrystalline thin film is composed of indium tin oxide, which is made of mainly indium oxide and added tin oxide, having a specific resistance of, at the utmost,

Abstract: A liquid crystal display device having image signal lines of a bottom gate type TFT in which image signal lines comprise a laminated film of a first conductive film as a lower layer and a second conductive film as an upper layer, the first conductive film being made of an alloy comprising Mo as a main ingredient and W and the second conductive film being made of an alloy comprising Mo as a main ingredient and Zr. The device is capable of satisfying requirements of reduced resistance, improved dry etching resistance, selective wet etching with respect to the gate insulative film, the number of laminated layer of two or less and tapered fabrication for the cross section.

Abstract: Disclosed is an optical system that has superior optical characteristic and wear resistance and can be formed at low temperatures. An optical system 101 for adjusting visible light transmittance to have a desired value comprises fluoride 103, and at least part of the optical system has a crystal grain diameter of 3 nm to 10 nm. The fluoride 103 has a specific surface area of 1 m2/g to 5 m2/g.

Abstract: A liquid crystal display unit is used that has data lines made of a molybdenum-alloyed film having a chromium content from 2 wt. % or more, but up to 5 wt. %, or a molybdenum-alloyed film lamination (Mo—Cr) consisting of a first electroconductive film and a second electroconductive film, with the first electroconductive film having a chromium content from 2 wt. % or more, but up to 5 wt. % and the second electroconductive film being provided above the first electroconductive film and containing less chromium than the first electroconductive film does. The use of the data lines composed of these materials enables the following requirements to be satisfied: high dry-etching resistance, low resistance, low ACF contact resistance, low side etching rates, forward tapered wiring cross-sectional shape, and up to two lamination layers.

Abstract: There is provided a plasma display panel (PDP), consisting of a front panel (10) equipped with display electrodes (8) and a rear panel (4) equipped with address electrodes (3), that displays an image by causing discharge in a small discharge space formed between the two panels; wherein there are provided two layers of protective films (5, 6), made of metallic oxide, covering the dielectric layer (7) installed on the front panel (10); the outer, upper layer (6) being formed into a layer of material with a specific surface area of 20 m2/g or more and a film thickness of 1 &mgr;m or less, exhibiting a high discharge characteristic; and the inner, lower layer (5) being formed into a layer of material with a specific surface area of 10 m2/g or less and a film thickness of 1 &mgr;m or more, exhibiting a low water-adsorption characteristic.

Abstract: There is provided a plasma display panel (PDP), consisting of a front panel (10) equipped with display electrodes (8) and a rear panel (4) equipped with address electrodes (3), that displays an image by causing discharge in a small discharge space formed between the two panels; wherein there are provided two layers of protective films (5, 6), made of metallic oxide, covering the dielectric layer (7) installed on the front panel (10); the outer, upper layer (6) being formed into a layer of material with a specific surface area of 20 m2/g or more and a film thickness of 1 &mgr;m or less, exhibiting a high discharge characteristic; and the inner, lower layer (5) being formed into a layer of material with a specific surface area of 10 m2/g or less and a film thickness of 1 &mgr;m or more, exhibiting a low water-adsorption characteristic.

Abstract: A wiring of a liquid crystal display device is made of a lamination film including a first layer of Nb or alloy containing Nb as its main component and a second layer of nitride of Nb or alloy containing Nb as its main component. A liquid crystal display device having such a wiring provides a wiring structure excellent in resistance to thermal oxidation.

Abstract: The method of fabrication of a liquid crystal display device includes the steps of: forming a metal thin film on a glass substrate; forming a resist pattern on the metal thin film by photolithography; and wet-etching the metal thin film with an etchant formed of a mixture including phosphoric acid, nitric acid in a range between 7 mol % and 12 mol % inclusive, and at least one of ammonium fluoride and hydrogen fluoride in a trace amount of about 0.01 to 0.1 mol %.

Abstract: A liquid crystal display device comprising a wiring line of a laminated structure over an insulating substrate. The laminated structure includes a first layer made of a first metal layer, and a second layer formed over the first layer and made of a second metal layer having the same principal component as that of the first metal layer but a different added element and/or a different composition. The first layer has a side end face of a right-tapered shape, whereas the second layer has a side end face set at a right angle or counter-tapered with respect to the substrate face.

Abstract: A liquid crystal display apparatus is high in manufacturing yield because defects caused by short-circuiting between the electrodes are eliminated. The liquid crystal display apparatus employs films made of an Al—Nd alloy of Nd content of 1 to 4.5 wt % in at least one of the gate wiring and the data wiring.

Abstract: In an active matrix type liquid crystal display device, at least material of one element, forming the connecting portion between signal transfer lines related to the scan lines and the data signal lines of the device, is an alloy of at least a chemical element selected from the group consisting of Nb, Mo, Ta, and W, with Cr, the scan lines and means for generating scan pulses are connected to each other via a first opening formed in an insulating film, the data signal lines and the means for generating image data are connected to each other via a second opening formed in an insulating film, a polycrystalline thin film, which is connected to the means for generating scan pulses, is inserted into the first opening, and a polycrystalline thin film, which is connected to the means for generating image data, is inserted into the second opening, and the polycrystalline thin film is composed of indium tin oxide, which is made of mainly indium oxide and added tin oxide, having a specific resistance of, at the utmost,

Abstract: In an active matrix type liquid crystal display device, at least material of one element, forming the connecting portion between signal transfer lines related to the scan lines and the data signal lines of the device, is an alloy of at least a chemical element selected from the group consisting of Nb, Mo, Ta, and W, with Cr, the scan lines and means for generating scan pulses are connected to each other via a first opening formed in an insulating film, the data signal lines and the means for generating image data are connected to each other via a second opening formed in an insulating film, a polycrystalline thin film, which is connected to the means for generating scan pulses, is inserted into the first opening, and a polycrystalline thin film, which is connected to the means for generating image data, is inserted into the second opening, and the polycrystalline thin film is composed of indium tin oxide, which is made of mainly indium oxide and added tin oxide, having a specific resistance of, at the utmost,

Abstract: An active-matrix liquid crystal display unit in which gate lines and drain lines disposed around a TFT device and a transparent pixel electrode are formed by a metal film including Ne atoms in a Cr film so as to provide a resistivity of 22 .mu..OMEGA.cm or below for the metal film and an absolute value of 200 MPa or below for the film stress.

Abstract: A liquid crystal display unit in which at least one of a gate electrode line, a drain electrode line, and a gate electrode and a source/drain electrode of a TFT formed on a substrate is composed of a metal Nb or an alloy material of Nb. Glass is used as the substrate, and the size thereof is preferably 300 mm or longer on one side and 1 mm or less in thickness. In order to provide a low wiring resistance to produce a high resolution and large size TFT panel, the resistivity of the metal Nb or the alloy material thereof is preferably 25 .mu..OMEGA.cm or less, and the film stress of Nb or the alloy material thereof on the glass substrate is 400 MPa or less.

Abstract: A liquid crystal display device can be fabricated through simplified processes, and provide a high product yield and excellent picture displaying characteristic. The liquid crystal display device includes a first substrate having thereon a plurality of drain wirings, a plurality of gate wirings crossing the plurality of drain wirings in a matrix array, a plurality of thin film transistors disposed in the vicinity of these crossings, and a plurality of pixel electrodes connected to the thin film transistors, respectively. A second substrate is disposed in opposing relation to the first substrate, and a liquid crystal layer is sandwiched between these substrates. Each terminal portion of the plurality of drain wirings and plurality of gate wirings is constructed with a metallic film covered with a transparent conductive film.

Abstract: In order to provide a liquid crystal display apparatus having bright image display and a preferred production yield, a gate insulating film under a transparent pixel electrode on a transparent substrate is provided with an aperture smaller than a plane area of the pixel electrode, and a source electrode pattern under the pixel electrode is composed so as to cross the aperture. Thin film transistors (TFT) of the liquid crystal display apparatus have a gate electrode and a laminate layer of a gate insulating film and a semiconductor film. End portions of the gate electrode and the laminate layer are tapered, and the end portion of the gate electrode is tapered with a taper angle equal to or less than three times (where, less than 90.degree.) of a taper angle at the end portion of the laminate layer.

Abstract: An active matrix liquid crystal display comprises a first substrate, a second substrate, and liquid crystal held therebetween. The first substrate includes on one surface, a plurality of gate lines, a plurality of drain lines crossing the gate lines, and transistors each disposed in the vicinity of crossing points between the gate lines and the drain lines. Source electrodes of the transistors are each connected to pixel electrodes each disposed in the vicinity of the source electrodes. The drain electrodes of the transistors are connected to one of a plurality of the drain lines while the gate electrodes of the transistors are connected to one of a plurality of the gate lines. The second substrate is disposed in such a manner as to face to the first substrate and to have facing electrodes on the surface facing to the pixel electrodes.

Abstract: In order to provide a liquid crystal display apparatus having bright image display and a preferable production yield, a gate insulating film under a transparent pixel electrode on a transparent substrate is provided with an aperture smaller than a plane area of the pixel electrode, a source electrode pattern under the pixel electrode is composed so as to cross the aperture, and thin film transistor (TFT) having a gate electrode of which end portion is tapered with a taper angle equal to or less than three times (where, less than 90.degree.) of a taper angle at the end portion of a semiconductor pattern is provided.

Abstract: An active matrix type liquid-crystal display device wherein a plurality of gate wiring lines and drain wiring lines which cross perpendicularly to each other are laid on a first of two insulating substrates. The gate wiring lines and the drain wiring lines are electrically insulated from each other at areas where they crossover each other and thin-film transistors are respectively arranged near the individual crossover areas with their respective source electrodes connected to corresponding ones of transparent pixel electrodes disposed near the source electrodes, with their respective drain electrodes connected to the drain wiring lines, and with their respective gate electrodes connected to the gate wiring lines. The above structure, which includes the first insulating substrate, is covered with either only alignment layers or both protective insulating layers and alignment layers.

Abstract: An electroluminescent device including dielectric films each of which consists of first regions made of a material with a strong self-healing type dielectric breakdown characteristic, second regions made of a material with a strong propagating type dielectric breakdown characteristic, and mixed regions consisting of a mixture of these two materials, the first and second regions being arranged alternately in the film thickness direction with the mixed regions therebetween, the mixing ratio of these two materials in the mixed regions changing in such a manner that the ratio of one material gradually decreases from a region of this material toward the adjacent region of the other material, that is, the ratio of the other material increases. Thus, the changes in the mixing ratio of these two materials of the dielectric films in the film thickness direction are continuous and periodic.