Abstract: A power module includes a first end power semiconductor element and a second end power semiconductor element. A first sum is a sum of a path length between the gate electrode of the first end power semiconductor element and a first control terminal and a path length between the source electrode of the first end power semiconductor element and a first detection terminal. A second sum is a sum of a path length between the gate electrode of the second end power semiconductor element and the first control terminal and a path length between the source electrode of the second end power semiconductor element and the first detection terminal. The power module includes a first control layer connected to the gate electrode. The first control layer includes a first detour portion that detours the path to reduce a difference between the first sum and the second sum.

Abstract: A power module includes a mount layer, a control layer, and a drive layer that are formed on an electrically insulative substrate and multiple power semiconductor elements mounted on the mount layer in one direction and each including a first drive electrode connected to the mount layer, a second drive electrode connected to the drive layer, and a control electrode connected to the control layer. A control terminal is connected to the control layer and a detection terminal is connected to the drive layer. At least one of the control layer and the drive layer includes a detour portion that detours to reduce a difference between the power semiconductor elements in a sum of a length of a first conductive path between the control electrode and the control terminal and a length of a second conductive path between the second drive electrode and the detection terminal.

Abstract: A semiconductor device includes a switching circuit that switches between conducting state and disconnected state. The switching circuit includes first and second switching elements electrically connected in parallel. The first switching element is an IGBT, and the second switching element is a MOSFET. When a current flowing in the switching circuit is less than a first current value, the second switching element has a lower voltage than the first switching element. When the current flowing in the switching circuit is not less than a second current value and not greater than a third current value, the threshold voltage of the second switching element ranges from ?1.0 V to +0.4 V relative to the threshold voltage of the first switching element. The third current value is not greater than the rated current of the switching circuit. The first current value is less than the third current value.

Abstract: A semiconductor device includes: a plurality of semiconductor elements connected in parallel; a rectifier element connected in anti-parallel to the plurality of semiconductor elements; a power terminal electrically connected to the plurality of semiconductor elements; and an electrical conductor electrically connected to the power terminal and the plurality of semiconductor elements and including a pad portion to which the plurality of semiconductor elements are bonded. The plurality of first semiconductor elements include a first element and a second element. The minimum conduction path of the first element to the power terminal is shorter than the minimum conduction path of the second element to the power terminal. The pad portion includes a first section to which the first element is bonded and a second section to which the second element is bonded. The rectifier element is located in the first section of the pad portion.

Abstract: A power module includes a mount layer, a control layer, and a drive layer that are formed on an electrically insulative substrate and multiple power semiconductor elements mounted on the mount layer in one direction and each including a first drive electrode connected to the mount layer, a second drive electrode connected to the drive layer, and a control electrode connected to the control layer. A control terminal is connected to the control layer and a detection terminal is connected to the drive layer. At least one of the control layer and the drive layer includes a detour portion that detours to reduce a difference between the power semiconductor elements in a sum of a length of a first conductive path between the control electrode and the control terminal and a length of a second conductive path between the second drive electrode and the detection terminal.

Abstract: An object of the invention is to find in nature a compound having a degranulation inhibitory action comparable to that of steroidal or non-steroidal degranulation inhibitors, but without any side effect such as hormone action or gastrointestinal disturbances which are observed in these inhibitors, and there is provided a degranulation inhibitor comprising as an active ingredient an ellagic acid derivative of the formula (I): [wherein R1 represents a hydroxy group or methoxy group, and R2 represents a methoxy group, or R1 and R2 are taken together to form a methylenedioxy group, R3 represents a hydroxy group or methoxy group, and R4 represents a glucosyloxy group or hydroxy group] or a salt thereof.