Patents by Inventor Kenichi Sasatani
Kenichi Sasatani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11932281Abstract: Provided are a computer program product, system, and method for configuring and controlling an automated vehicle to perform user specified operations. User vehicle control programs are loaded in an unmanned vehicle to control the unmanned vehicle to perform a user specified operation. The loading the user vehicle control programs replaces base vehicle control programs in the unmanned vehicle. There is communication with the unmanned vehicle to execute the user vehicle control programs to control the unmanned vehicle to perform the user specified operation. The base vehicle control programs are loaded into the unmanned vehicle to replace the user vehicle control programs to return control of the unmanned vehicle to a vehicle provider after performing the user specified operation.Type: GrantFiled: September 22, 2021Date of Patent: March 19, 2024Assignee: International Business Machines CorporationInventors: Sanehiro Furuichi, Akira Saito, Yohkichi Sasatani, Kenichi Takasaki, Taku Sasaki, Hirotaka Matsumoto
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Patent number: 7749324Abstract: The present invention includes a method for casting a silicon ingot by using a continuous casting method by means of an electromagnetic induction, and a method for cutting the silicon ingot as a starting material into plural silicon blocks. When the silicon blocks with a square section are cut out, the sectional shape of the silicon ingot is set to be rectangular. Not less than 6 pieces of equal-sized silicon blocks are cut out from the silicon ingot, thereby enabling to enhance the manufacturing efficiency to a great extent. And since the amount of excision of the edge per silicon block is reduced, the production yield can be enhanced. Further, since the proportion of columnar crystals with large grain size inside the ingot can be increased, it becomes possible to enhance the conversion efficiency of a solar battery using the silicon block as a substrate material.Type: GrantFiled: December 21, 2007Date of Patent: July 6, 2010Assignee: Sumco Solar CorporationInventors: Mitsuo Yoshihara, Kenichi Sasatani
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Publication number: 20090044926Abstract: In a silicon casting apparatus according to the present invention, silicon melted by electromagnetic induction heating is continuously solidified using an electrically-conductive bottomless cold crucible and an induction coil surrounding the cold crucible. The cold crucible is made of copper alloy containing beryllium (desirably containing beryllium of 0.1 to 5 mass %), whereby the generation of electric-discharge flaw can be effectively prevented in performing electromagnetic casting. The use of the silicon casting apparatus according to the present invention can greatly extend a crucible life to reduce facility costs. Additionally, a solar-cell silicon ingot can be produced with high quality.Type: ApplicationFiled: August 15, 2008Publication date: February 19, 2009Inventors: Michio Kida, Kenichi Sasatani, Mitsuo Yoshihara, Tomohiro Onizuka
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Publication number: 20080210156Abstract: In a casting method for polycrystalline silicon in which a bottomless cooling crucible with a part of a certain length in an axial direction being circumferentially and plurally sectioned is provided inside an induction coil, producing a silicon melt within the cooling crucible by means of electromagnetically induced heating by the induction coil, and withdrawing the silicon melt in a downward direction while being solidified, an alternating current with a frequency of 25-35 kHz is applied on the induction coil. According to the casting method for polycrystalline silicon of the present invention, in addition to preventing rapid cooling of the ingot surface at the time of solidifying the molten silicon and producing the ingot, the stirring of the molten silicon inside the crucible is suppressed to thereby promote the growth of large diameter crystals, with the result that the conversion efficiency of the cast polycrystalline silicon used as solar cells is increased.Type: ApplicationFiled: January 14, 2008Publication date: September 4, 2008Inventors: Kenichi Sasatani, Keita Nakagawa, Tomohiro Onizuka, Nobuyuki Kubo
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Publication number: 20080179037Abstract: The present invention includes a method for casting a silicon ingot by using a continuous casting method by means of an electromagnetic induction, and a method for cutting the silicon ingot as a starting material into plural silicon blocks. When the silicon blocks with a square section are cut out, the sectional shape of the silicon ingot is set to be rectangular. Not less than 6 pieces of equal-sized silicon blocks are cut out from the silicon ingot, thereby enabling to enhance the manufacturing efficiency to a great extent. And since the amount of excision of the edge per silicon block is reduced, the production yield can be enhanced. Further, since the proportion of columnar crystals with large grain size inside the ingot can be increased, it becomes possible to enhance the conversion efficiency of a solar battery using the silicon block as a substrate material.Type: ApplicationFiled: December 21, 2007Publication date: July 31, 2008Inventors: Mitsuo Yoshihara, Kenichi Sasatani
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Patent number: 6994835Abstract: The present invention reduces temperature gradient in the direction of the radius of solidified ingots of silicon immediately after solidification, which has serious influences on the quality as a solar cell and improves the quality. Silicon raw materials are melted inside a bottomless crucible combined with an induction coil by electromagnetic induction heating. The silicon melt formed inside the bottomless crucible is allowed to descend and solidified ingots of silicon are manufactured continuously. Plasma heating by a transferred plasma arc torch is also used for melting the silicon raw materials. The plasma arc torch is moved for scanning along the inner surface of the bottomless crucible in the horizontal direction. A plasma electrode on the solidified ingot side to generate transferred plasma arc is allowed to contact the surface of the solidified ingot at positions where the temperature of the solidified ingot becomes 500 to 900° C.Type: GrantFiled: December 28, 2000Date of Patent: February 7, 2006Assignee: Sumitomo Mitsubishi Silicon CorporationInventors: Kenichi Sasatani, Naritoshi Kimura, Masakazu Ohnishi
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Patent number: 6695035Abstract: To restrict to a low level a temperature gradient of an ingot immediately after solidification in a bottomless crucible in a electromagnetic induction casting method using an electrically conductive bottomless crucible. An upper section and a lower section of an electrically conductive bottomless crucible to be disposed inside an induction coil are configured as a water-cooled section and a non-water-cooled section. Both the water-cooled section and the non-water-cooled section are divided by vertical slits into a plurality of portions in a circumferential direction. Rapid cooling with water in the lower section of the crucible is restricted.Type: GrantFiled: September 26, 2001Date of Patent: February 24, 2004Assignee: Sumitomo Mitsubishi Silicon CorporationInventors: Naritoshi Kimura, Kenichi Sasatani, Kyojiro Kaneko
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Publication number: 20030205358Abstract: To restrict to a low level a temperature gradient of an ingot immediately after solidification in a bottomless crucible in a electromagnetic induction casting method using an electrically conductive bottomless crucible. An upper section and a lower section of an electrically conductive bottomless crucible to be disposed inside an induction coil are configured as a water-cooled section and a non-water-cooled section. Both the water-cooled section and the non-water-cooled section are divided by vertical slits into a plurality of portions in a circumferential direction. Rapid cooling with water in the lower section of the crucible is restricted.Type: ApplicationFiled: September 26, 2001Publication date: November 6, 2003Inventors: Naritoshi Kimura, Kenichi Sasatani, Kyojiro Kaneko
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Publication number: 20030150374Abstract: The present invention reduces temperature gradient in the direction of the radius of solidified ingots of silicon immediately after solidification, which has serious influences on the quality as a solar cell and improves the quality. Silicon raw materials are melted inside a bottomless crucible 3 combined with an induction coil 2 by electromagnetic induction heating. The silicon melt 19 formed inside the bottomless crucible 3 is allowed to descend and solidified ingots of silicon 12 are manufactured continuously. Plasma heating by a transferred plasma arc torch 9 is also used for melting the silicon raw materials. The plasma arc torch 9 is moved for scanning along the inner surface of the bottomless crucible 3 in the horizontal direction. A plasma electrode on the solidified ingot side to generate transferred plasma arc is allowed to contact the surface of the solidified ingot at positions where the temperature of the solidified ingot becomes 500 to 900° C.Type: ApplicationFiled: January 8, 2003Publication date: August 14, 2003Inventors: Kenichi Sasatani, Naritoshi Kimura, Masakazu Ohnishi