Abstract: According to one embodiment, a magnetoresistive memory device includes: a first ferromagnetic layer; a stoichiometric first layer; a first insulator between the first ferromagnetic layer and the first layer; a second ferromagnetic layer between the first insulator and the first layer; and a non-stoichiometric second layer between the second ferromagnetic layer and the first layer. The second layer is in contact with the second ferromagnetic layer and the first layer.

Abstract: A gear manufacturing apparatus for machining a gear workpiece wherein, when at least one of end regions in a tooth trace direction of each tooth of the workpiece is machined, a control device executes a specific machining control for adjusting a relative position of a tool to the workpiece based on information about the relative position computed by setting, as a machining reference position, a position of the tool on an outer edge line in an X-axis-orthogonal cross section different from a normal machining point such that a distance between a center of the tool and a center of the gear workpiece in the X-axis-orthogonal cross section when the at least one of the end regions is machined is larger than when the at least one of the end regions is machined by setting the normal machining point as the machining reference position.

Abstract: According to one embodiment, a magnetoresistive memory device includes: a first ferromagnetic layer; a stoichiometric first layer; a first insulator between the first ferromagnetic layer and the first layer; a second ferromagnetic layer between the first insulator and the first layer; and a non-stoichiometric second layer between the second ferromagnetic layer and the first layer. The second layer is in contact with the second ferromagnetic layer and the first layer.

Abstract: Provided is a shoe sole member partially or entirely formed of a resin composite, the resin composite including; a non-foamed elastic body matrix composed of an elastomer; and a plurality of resin foam particles dispersed in the elastic body matrix. Also provided is a shoe including the shoe sole member.

Abstract: A semiconductor module includes: a circuit board; a semiconductor chip having a first electrode pad on a first surface, bonded to the circuit board at a second surface that is opposite to the first surface, and having side surfaces intersecting the first surface and the second surface; an external terminal electrically connected to the first electrode pad; and an insulating member configured to fix the external terminal, wherein by the insulating member contacting the side surfaces of the semiconductor chip at a plurality of locations, parallel movement and rotational movement of the semiconductor chip relative to the insulating member in a plane parallel, to the first surface are restricted, and wherein the external terminal penetrates the insulating member.

Abstract: Provided is a vibration device that is connected to an information processing apparatus and includes a vibration mechanism that generates a vibration. The vibration device receives a first vibration command for the vibration device from the information processing apparatus, receives a second vibration command for a different type of vibration device from the information processing apparatus in parallel with the first vibration command, and operates the vibration mechanism on the basis of at least one of the first vibration command and the second vibration command. The second vibration command is in a format different from that of the first vibration command. The different type of vibration device is of a type different from that of the vibration device.

Abstract: A mounting structure of a multilayer ceramic capacitor includes a multilayer ceramic capacitor and a mounting substrate on which the multilayer ceramic capacitor is mounted. The multilayer ceramic capacitor includes a laminate including a plurality of dielectric layers and a plurality of internal electrodes alternately laminated, and a first external electrode, a second external electrode, a third external electrode, and a fourth external electrode provided on a surface of the laminate. The plurality of internal electrodes include a first internal electrode, a second internal electrode, and a third internal electrode. The first external electrode, the third external electrode, and the fourth external electrode are bonded to the mounting substrate, and current is not directly supplied from the mounting substrate to the second external electrode.

Abstract: A magnetic memory device includes a substrate; a first magnetoresistive effect element; and a second magnetoresistive effect element provided at a side of the first magnetoresistive effect element opposite to a side of the first magnetoresistive effect element at which the substrate is provided. A heat absorption rate of the first magnetoresistive effect element is lower than a heat absorption rate of the second magnetoresistive effect element.

Abstract: A semiconductor module includes a semiconductor chip having a first surface provided with a first electrode pad and a second surface, opposite to the first surface, provided with a second electrode pad, a first substrate connected to the first electrode pad, a second substrate provided on the side of the second surface, and a conductor section, electrically connecting the second electrode pad and the second substrate, and having a size greater than the second electrode pad in a plan view viewed from the side of the second substrate.

Abstract: A semiconductor module includes: a circuit board; a semiconductor chip having a first electrode pad on a first surface, bonded to the circuit board at a second surface that is opposite to the first surface, and having side surfaces intersecting the first surface and the second surface; an external terminal electrically connected to the first electrode pad; and an insulating member configured to fix the external terminal, wherein by the insulating member contacting the side surfaces of the semiconductor chip at a plurality of locations, parallel movement and rotational movement of the semiconductor chip relative to the insulating member in a plane parallel, to the first surface are restricted, and wherein the external terminal penetrates the insulating member.

Abstract: A semiconductor module includes a semiconductor chip having a first surface provided with a first electrode pad and a second surface, opposite to the first surface, provided with a second electrode pad, a first substrate connected to the first electrode pad, a second substrate provided on the side of the second surface, and a conductor section, electrically connecting the second electrode pad and the second substrate, and having a size greater than the second electrode pad in a plan view viewed from the side of the second substrate.

Abstract: An image processing device capable of executing a plurality of jobs that differ in kind, the image processing device includes: a controller that controls execution of an input job; and a detection part that, on the basis of a voice detected by a voice detector, detects that any of a plurality of predetermined target voices has been emitted, wherein in a case where it is detected that the target voice has been emitted during a target setting period corresponding to a job that is being executed, among setting periods that are defined beforehand according to kinds of jobs respectively, the controller stops the execution of the job.

Abstract: An image processing system includes: an image processing device that comprises a first display and a first hardware processor; and an information processing device that communicates with the image processing device, and comprises: a second display on which a second screen same as a first screen being displayed on the first display is displayed; and a second hardware processor, wherein one of the first and second hardware processors determines whether a screen display standard of the first display is left or right standard and whether a screen display standard of the second display is left or right standard, and inverts the second screen that is same as the first screen being displayed on the first display and is displayed on the second display right and left, when the screen display standards of the first and second displays are determined to be different from each other.

Abstract: An image processing device capable of executing a plurality of jobs that differ in kind, the image processing device includes: a controller that controls execution of an input job; and a detection part that, on the basis of a voice detected by a voice detector, detects that any of a plurality of predetermined target voices has been emitted, wherein in a case where it is detected that the target voice has been emitted during a target setting period corresponding to a job that is being executed, among setting periods that are defined beforehand according to kinds of jobs respectively, the controller stops the execution of the job.

Abstract: A device for determining a gesture includes a display portion for selectively displaying one of screens; a storage portion for storing, for each of the screens, a rule used for distinguishing between gestures; a detection portion for detecting a motion made by a user; and a determination portion for identifying, from among the gestures, a gesture represented by the motion detected by the detection portion based on the rule for a current screen, the current screen being one of the screens and being displayed at a time when the motion has been detected.

Abstract: An image processing apparatus includes a display for displaying operational information for executing image processing, an operation unit for giving an input instruction in association with a display region appearing on the display, and a controller for controlling the display in accordance with the input instruction on the operation unit. The controller is configured to determine whether an input instruction of a flick operation is given through the operation unit in association with a prescribed display region appearing on the display. If it is determined that the input instruction of the flick operation is given, the controller is configured to enlarge a range of the prescribed display region in which the input instruction is allowed, and to display the enlarged display region on the display.

Abstract: A semiconductor module (10A) according to one embodiment includes: vertical first and second transistor chips (12A, 12B), wherein a second main electrode pad (20) formed on a back surface of the first transistor chip is mounted on and connected to a first wiring pattern (74) on the substrate, a first control electrode pad (16) formed together with a first main electrode pad on a front surface of the first transistor chip is electrically connected to a second wiring pattern (76) on the substrate, third main electrode pad (18) formed together with a second control electrode pad on a front surface of the second transistor is mounted on and connected to the first wiring pattern, and the second control electrode pad (16) formed on a back surface of the second transistor chip is electrically connected to a third wiring pattern.

Abstract: A semiconductor module (10A) according to one embodiment includes a plurality of first and second transistor chips (hereinafter, first and second transistors) (12A, 12B) and a substrate (90). In each of the first and second transistors, first and second main electrode pads (18, 20) are each electrically connected together; the second main electrode pads of the first transistors are electrically connected to the first main electrode pads of the second transistors; control electrode pads of the first and second transistors are respectively connected to first and second control electrode wiring patterns (94, 98) on the substrate via first and second resistance parts (13A, 13B); and the first and second resistance parts respectively have a plurality of first and second resistance elements (72A, 72B) each connected to the corresponding control electrode pad, and first and second linking parts (74A, 74B) respectively linking the plurality of first and second resistance elements together.

Abstract: A semiconductor module (10A) according to one embodiment includes: vertical first and second transistor chips (12A, 12B), wherein a second main electrode pad (20) formed on a back surface of the first transistor chip is mounted on and connected to a first wiring pattern (74) on the substrate, a first control electrode pad (16) formed together with a first main electrode pad on a front surface of the first transistor chip is electrically connected to a second wiring pattern (76) on the substrate, third main electrode pad (18) formed together with a second control electrode pad on a front surface of the second transistor is mounted on and connected to the first wiring pattern, and the second control electrode pad (16) formed on a back surface of the second transistor chip is electrically connected to a third wiring pattern.

Abstract: A semiconductor module (10A) according to one embodiment includes a plurality of first and second transistor chips (hereinafter, first and second transistors) (12A, 12B) and a substrate (90). In each of the first and second transistors, first and second main electrode pads (18, 20) are each electrically connected together; the second main electrode pads of the first transistors are electrically connected to the first main electrode pads of the second transistors; control electrode pads of the first and second transistors are respectively connected to first and second control electrode wiring patterns (94, 98) on the substrate via first and second resistance parts (13A, 13B); and the first and second resistance parts respectively have a plurality of first and second resistance elements (72A, 72B) each connected to the corresponding control electrode pad, and first and second linking parts (74A, 74B) respectively linking the plurality of first and second resistance elements together.