Patents by Inventor Kenichi Sawara

Kenichi Sawara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6200947
    Abstract: There are provided a metal-corrosion inhibitor and a cleaning liquid comprising said corrosion inhibitor, which are suitable for cleaning semiconductor devices, and less than that so far in use in the possibility of affecting human health and the ecological system through a water medium, the corrosion inhibitor comprising an aliphatic alcohol compound having at least one mercapto group in the molecule, wherein a number of carbon atoms constituting said alcohol compound is not less than 2, and a carbon atom bonded with a mercato group and another carbon atom bonded with a hydroxyl group are contiguously bonded with each other.
    Type: Grant
    Filed: January 18, 2000
    Date of Patent: March 13, 2001
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Masayuki Takashima, Kenichi Sawara
  • Patent number: 4906762
    Abstract: According to the process of the present invention, trialkylarsenic compounds having a very high purity of usually over 99% can be obtained by using inexpensive, easily available arsenic oxides and without any complicated operations. The trialkylarsenic compounds thus obtained can be effectively used as a material for compound semiconductors in the field of electronic industry as well as in the field of various chemical industries, and are of great industrial value.
    Type: Grant
    Filed: August 16, 1988
    Date of Patent: March 6, 1990
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Kenichi Sawara, Hidekimi Kadokura, Tadaaki Yako
  • Patent number: 4797500
    Abstract: A method for purifying an organometallic compound in which an organometallic compound of gallium, aluminum or indium is contacted with at least one metal selected from metallic sodium, metallic potassium and a sodium-potassium alloy. This method is especially efficacious when the high-purity organometallic compound is used as a semiconductor because, by the disclosed method, the silicon components are removed as impurities, which silicon material tends to lower the electrical characteristics of the semiconductor.
    Type: Grant
    Filed: April 21, 1988
    Date of Patent: January 10, 1989
    Assignee: Sumitomo Chemical Company, Ltd.
    Inventors: Hidekimi Kadokura, Kenichi Sawara, Tadaaki Yako